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Emerging neuromorphic devices

Nanotechnology, 2020-02, Vol.31 (9), p.92001-092001

2020

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Impact of the Mechanical Stress on Switching Characteristics of Electrochemical Resistive Memory

Advanced materials (Weinheim), 2014-06, Vol.26 (23), p.3885-3892

2014

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Statistical Fluctuations in HfOx Resistive-Switching Memory: Part I - Set/Reset Variability

IEEE transactions on electron devices, 2014-08, Vol.61 (8), p.2912-2919

2014

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Recent progress in analog memory-based accelerators for deep learning

Journal of physics. D, Applied physics, 2018-06, Vol.51 (28), p.283001

2018

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Normally-off Logic Based on Resistive Switches-Part I: Logic Gates

IEEE transactions on electron devices, 2015-06, Vol.62 (6), p.1831-1838

2015

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Perspective on training fully connected networks with resistive memories: Device requirements for multiple conductances of varying significance

Journal of applied physics, 2018-10, Vol.124 (15)

2018

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Normally-off Logic Based on Resistive Switches-Part II: Logic Circuits

IEEE transactions on electron devices, 2015-06, Vol.62 (6), p.1839-1847

2015

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Optimised weight programming for analogue memory-based deep neural networks

Nature communications, 2022-06, Vol.13 (1), p.3765-3765, Article 3765

2022

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Set Variability and Failure Induced by Complementary Switching in Bipolar RRAM

IEEE electron device letters, 2013-07, Vol.34 (7), p.861-863

2013

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Unsupervised Learning to Overcome Catastrophic Forgetting in Neural Networks

IEEE journal on exploratory solid-state computational devices and circuits, 2019-06, Vol.5 (1), p.58-66

2019

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Toward Software-Equivalent Accuracy on Transformer-Based Deep Neural Networks With Analog Memory Devices

Frontiers in computational neuroscience, 2021-07, Vol.15, p.675741-675741

2021

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Analytical Modeling of Oxide-Based Bipolar Resistive Memories and Complementary Resistive Switches

IEEE transactions on electron devices, 2014-07, Vol.61 (7), p.2378-2386

2014

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Equivalent-accuracy accelerated neural-network training using analogue memory

Nature (London), 2018-06, Vol.558 (7708), p.60-67

2018

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Statistical Fluctuations in HfOx Resistive-Switching Memory: Part II-Random Telegraph Noise

IEEE transactions on electron devices, 2014-08, Vol.61 (8), p.2920-2927

2014

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Neuromorphic Learning and Recognition With One-Transistor-One-Resistor Synapses and Bistable Metal Oxide RRAM

IEEE transactions on electron devices, 2016-04, Vol.63 (4), p.1508-1515

2016

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Voltage-Controlled Cycling Endurance of HfOx-Based Resistive-Switching Memory

IEEE transactions on electron devices, 2015-10, Vol.62 (10), p.3365-3372

2015

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Physical Unbiased Generation of Random Numbers With Coupled Resistive Switching Devices

IEEE transactions on electron devices, 2016-05, Vol.63 (5), p.2029-2035

2016

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True Random Number Generation by Variability of Resistive Switching in Oxide-Based Devices

IEEE journal on emerging and selected topics in circuits and systems, 2015-06, Vol.5 (2), p.214-221

2015

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Unsupervised Learning by Spike Timing Dependent Plasticity in Phase Change Memory (PCM) Synapses

Frontiers in neuroscience, 2016-03, Vol.10, p.56-56

2016

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A 2-transistor/1-resistor artificial synapse capable of communication and stochastic learning in neuromorphic systems

Frontiers in neuroscience, 2015-01, Vol.8, p.438-438

2015

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A Compact Model for Stochastic Spike-Timing-Dependent Plasticity (STDP) Based on Resistive Switching Memory (RRAM) Synapses

IEEE transactions on electron devices, 2020-07, Vol.67 (7), p.2800-2806

2020

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Noise-Induced Resistance Broadening in Resistive Switching Memory-Part II: Array Statistics

IEEE transactions on electron devices, 2015-11, Vol.62 (11), p.3812-3819

2015

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Noise-Resilient DNN: Tolerating Noise in PCM-Based AI Accelerators via Noise-Aware Training

IEEE transactions on electron devices, 2021-09, Vol.68 (9), p.4356-4362

2021

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Postcycling Degradation in Metal-Oxide Bipolar Resistive Switching Memory

IEEE transactions on electron devices, 2016-11, Vol.63 (11), p.4279-4287

2016

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Noise-Induced Resistance Broadening in Resistive Switching Memory-Part I: Intrinsic Cell Behavior

IEEE transactions on electron devices, 2015-11, Vol.62 (11), p.3805-3811

2015

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Emerging neuromorphic devices

Impact of the Mechanical Stress on Switching Characteristics of Electrochemical Resistive Memory

Statistical Fluctuations in HfOx Resistive-Switching Memory: Part I - Set/Reset Variability

Recent progress in analog memory-based accelerators for deep learning

Normally-off Logic Based on Resistive Switches-Part I: Logic Gates

Perspective on training fully connected networks with resistive memories: Device requirements for multiple conductances of varying significance

Normally-off Logic Based on Resistive Switches-Part II: Logic Circuits

Optimised weight programming for analogue memory-based deep neural networks

Set Variability and Failure Induced by Complementary Switching in Bipolar RRAM

Unsupervised Learning to Overcome Catastrophic Forgetting in Neural Networks

Toward Software-Equivalent Accuracy on Transformer-Based Deep Neural Networks With Analog Memory Devices

Analytical Modeling of Oxide-Based Bipolar Resistive Memories and Complementary Resistive Switches

Equivalent-accuracy accelerated neural-network training using analogue memory

Statistical Fluctuations in HfOx Resistive-Switching Memory: Part II-Random Telegraph Noise

Neuromorphic Learning and Recognition With One-Transistor-One-Resistor Synapses and Bistable Metal Oxide RRAM

Voltage-Controlled Cycling Endurance of HfOx-Based Resistive-Switching Memory

Physical Unbiased Generation of Random Numbers With Coupled Resistive Switching Devices

True Random Number Generation by Variability of Resistive Switching in Oxide-Based Devices

Unsupervised Learning by Spike Timing Dependent Plasticity in Phase Change Memory (PCM) Synapses

A 2-transistor/1-resistor artificial synapse capable of communication and stochastic learning in neuromorphic systems

A Compact Model for Stochastic Spike-Timing-Dependent Plasticity (STDP) Based on Resistive Switching Memory (RRAM) Synapses

Noise-Induced Resistance Broadening in Resistive Switching Memory-Part II: Array Statistics

Noise-Resilient DNN: Tolerating Noise in PCM-Based AI Accelerators via Noise-Aware Training

Postcycling Degradation in Metal-Oxide Bipolar Resistive Switching Memory

Noise-Induced Resistance Broadening in Resistive Switching Memory-Part I: Intrinsic Cell Behavior

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