UB Paderborn / Katalog / Suche / in CDI

Determination of Optical Properties of MOVPE-Grown InxGa1-xAs/InP Epitaxial Structures by Spectroscopic Ellipsometry

Brazilian journal of physics, 2022-10, Vol.52 (5), Article 184

2022

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Nucleation layer temperature effect on AlN epitaxial layers grown by metalorganic vapour phase epitaxy

Journal of materials science. Materials in electronics, 2021-10, Vol.32 (20), p.25507-25515

2021

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XRD and photoluminescence measurements of GaN grown on dome shaped patterned sapphire with different NH3 flow rates

Cumhuriyet Science Journal, 2021-03, Vol.42 (1), p.184-190

2021

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Experimental insights toward carrier localization in in-rich InGaAs/InP as candidate for SWIR detection: Microstructural analysis combined with optical investigation

Materials science in semiconductor processing, 2023-01, Vol.153, p.107149, Article 107149

2023

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Influence of Highly Efficient Carbon Doping on AlxGa1−xAs Layers with Different Al Compositions (x) Grown by MOVPE

Journal of electronic materials, 2023-09, Vol.52 (9), p.6042-6051

2023

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Optical and structural properties of In-rich InxGa1−xAs epitaxial layers on (100) InP for SWIR detectors

Materials science & engineering. B, Solid-state materials for advanced technology, 2020-12, Vol.262, p.114769, Article 114769

2020

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High-quality AlN growth: a detailed study on ammonia flow

Journal of materials science. Materials in electronics, 2023-02, Vol.34 (4), p.250, Article 250

2023

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Influence of the PALE growth temperature on quality of MOVPE grown AlN/Si (111)

Materials science in semiconductor processing, 2021-06, Vol.127, p.105733, Article 105733

2021

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Theoretical analyses of the carrier localization effect on the photoluminescence of In-rich InGaAs layer grown on InP

Materials science in semiconductor processing, 2022-03, Vol.140, p.106411, Article 106411

2022

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Comprehensive growth and characterization study on highly n-doped InGaAs as a contact layer for quantum cascade laser applications

Semiconductor science and technology, 2018-05, Vol.33 (5), p.55005

2018

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Structural and electrical properties of nitrogen-doped ZnO thin films

Applied surface science, 2014-11, Vol.318, p.157-163

2014

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The influence of TMGa pre-flow time and amount as surfactant on the structural and optical properties of AlN epilayer

Micro and nanostructures (2022), 2022-08, Vol.168, p.207301, Article 207301

2022

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Systematic optical study of high-x InxGa1-xAs/InP structures for infrared photodetector applications

Optics and laser technology, 2022-04, Vol.148, p.107714, Article 107714

2022

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The effects of two-stage HT-GaN growth with different V/III ratios during 3D-2D transition

Journal of physics. D, Applied physics, 2018-01, Vol.51 (3), p.35105

2018

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In-situ thermal cleaning of the sapphire substrate and temperature effect on epitaxial AlN

Vacuum, 2022-11, Vol.205, p.111455, Article 111455

2022

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In-situ and ex-situ face-to-face annealing of epitaxial AlN

Vacuum, 2022-09, Vol.203, p.111284, Article 111284

2022

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Comprehensive growth and characterization study of GeOx/Si

Journal of molecular structure, 2023-02, Vol.1274, p.134398, Article 134398

2023

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Investigating the optical, electronic, magnetic properties and DFT of NiO films prepared using RF sputtering with various argon pressures

Physica. B, Condensed matter, 2023-07, Vol.661, p.414937, Article 414937

2023

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Growth and characterization of PALE Si-doped AlN on sapphire substrate by MOVPE

Materials science in semiconductor processing, 2022-05, Vol.142, p.106464, Article 106464

2022

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Effect of substrate temperature on Raman study and optical properties of GeOx/Si thin films

Journal of the Australian Ceramic Society, 2024-04, Vol.60 (2), p.591-599

2024

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Modeling of temperature-dependent photoluminescence of GaN epilayer by artificial neural network

Journal of the Australian Ceramic Society, 2023-12, Vol.59 (5), p.1145-1159

2023

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ZnO/Al2O3 layered structures deposited by RF magnetron sputtering on glass: growth characteristics, optical properties, and microstructural analysis

Journal of the Australian Ceramic Society, 2021-12, Vol.57 (5), p.1379-1388

2021

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ILC3 deficiency and generalized ILC abnormalities in DOCK8‐deficient patients

Allergy (Copenhagen), 2020-04, Vol.75 (4), p.921-932

2020

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Association of egg intake with blood lipids, cardiovascular disease, and mortality in 177,000 people in 50 countries

The American journal of clinical nutrition, 2020-04, Vol.111 (4), p.795-803

2020

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Glycemic Index, Glycemic Load, and Cardiovascular Disease and Mortality

The New England journal of medicine, 2021-04, Vol.384 (14), p.1312-1322

2021

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Determination of Optical Properties of MOVPE-Grown InxGa1-xAs/InP Epitaxial Structures by Spectroscopic Ellipsometry

Nucleation layer temperature effect on AlN epitaxial layers grown by metalorganic vapour phase epitaxy

XRD and photoluminescence measurements of GaN grown on dome shaped patterned sapphire with different NH3 flow rates

Experimental insights toward carrier localization in in-rich InGaAs/InP as candidate for SWIR detection: Microstructural analysis combined with optical investigation

Influence of Highly Efficient Carbon Doping on AlxGa1−xAs Layers with Different Al Compositions (x) Grown by MOVPE

Optical and structural properties of In-rich InxGa1−xAs epitaxial layers on (100) InP for SWIR detectors

High-quality AlN growth: a detailed study on ammonia flow

Influence of the PALE growth temperature on quality of MOVPE grown AlN/Si (111)

Theoretical analyses of the carrier localization effect on the photoluminescence of In-rich InGaAs layer grown on InP

Comprehensive growth and characterization study on highly n-doped InGaAs as a contact layer for quantum cascade laser applications

Structural and electrical properties of nitrogen-doped ZnO thin films

The influence of TMGa pre-flow time and amount as surfactant on the structural and optical properties of AlN epilayer

Systematic optical study of high-x InxGa1-xAs/InP structures for infrared photodetector applications

The effects of two-stage HT-GaN growth with different V/III ratios during 3D-2D transition

In-situ thermal cleaning of the sapphire substrate and temperature effect on epitaxial AlN

In-situ and ex-situ face-to-face annealing of epitaxial AlN

Comprehensive growth and characterization study of GeOx/Si

Investigating the optical, electronic, magnetic properties and DFT of NiO films prepared using RF sputtering with various argon pressures

Growth and characterization of PALE Si-doped AlN on sapphire substrate by MOVPE

Effect of substrate temperature on Raman study and optical properties of GeOx/Si thin films

Modeling of temperature-dependent photoluminescence of GaN epilayer by artificial neural network

ZnO/Al2O3 layered structures deposited by RF magnetron sputtering on glass: growth characteristics, optical properties, and microstructural analysis

ILC3 deficiency and generalized ILC abnormalities in DOCK8‐deficient patients

Association of egg intake with blood lipids, cardiovascular disease, and mortality in 177,000 people in 50 countries

Glycemic Index, Glycemic Load, and Cardiovascular Disease and Mortality

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