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The Structural and Electrical Properties of the Au/n-Si (MS) Diodes With Nanocomposites Interlayer (Ag-Doped ZnO/PVP) by Using the Simple Ultrasound-Assisted Method

IEEE transactions on electron devices, 2019-07, Vol.66 (7), p.3103-3109

2019

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Analysis of temperature dependent current-conduction mechanisms in Au/TiO2/n-4H-SiC (metal/insulator/semiconductor) type Schottky barrier diodes

Journal of applied physics, 2014-08, Vol.116 (8)

2014

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On frequency and voltage dependent physical characteristics and interface states characterization of the metal semiconductor (MS) structures with (Ti:DLC) interlayer

Physica. B, Condensed matter, 2023-10, Vol.666, p.415099, Article 415099

2023

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Temperature dependent electrical and dielectric properties of Au/polyvinyl alcohol (Ni, Zn-doped)/n-Si Schottky diodes

Microelectronics and reliability, 2010, Vol.50 (1), p.39-44

2010

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C-V-f and G/ω-V-f characteristics of Au/(In2O3-PVP)/n-Si (MPS) structure

Physica. B, Condensed matter, 2020-04, Vol.582, p.411996, Article 411996

2020

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Analysis of electrical characteristics of Au/SiO2/n-Si (MOS) capacitors using the high-low frequency capacitance and conductance methods

Microelectronic engineering, 2008-11, Vol.85 (11), p.2256-2260

2008

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Electrical parameters of Au/(%1Ni-PVA)/n-Si (MPS) structure: Surface states and their lifetimes

Physica. B, Condensed matter, 2021-11, Vol.621, p.413207, Article 413207

2021

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On the conduction mechanisms of Au/(Cu2O–CuO–PVA)/n-Si (MPS) Schottky barrier diodes (SBDs) using current–voltage–temperature (I–V–T) characteristics

Journal of materials science. Materials in electronics, 2018, Vol.29 (1), p.159-170

2018

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The comparative electrical characteristics of Au/n-Si (MS) diodes with and without a 2% graphene cobalt-doped Ca3Co4Ga0.001Ox interfacial layer at room temperature

Microelectronic engineering, 2016-01, Vol.149, p.166-171

2016

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Series resistance and interface states effects on the C–V and G/w–V characteristics in Au/(Co3O4-doped PVA)/n-Si structures at room temperature

Journal of materials science. Materials in electronics, 2017-09, Vol.28 (17), p.12967-12976

2017

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Electrical characteristics of Au/n-Si (MS) Schottky Diodes (SDs) with and without different rates (graphene + Ca1.9Pr0.1Co4Ox-doped poly(vinyl alcohol)) interfacial layer

Journal of materials science. Materials in electronics, 2017-06, Vol.28 (11), p.7905-7911

2017

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Energy density distribution profiles of surface states, relaxation time and capture cross-section in Au /n-type 4H - SiC SBDs by using admittance spectroscopy method

International journal of modern physics. B, Condensed matter physics, statistical physics, applied physics, 2014-07, Vol.28 (17), p.1450104

2014

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A study on the complex dielectric (ε)/electric-modulus (M)/impedance (Z), tangent-loss (tanδ), and ac conductivity (σac) of the Al/(S:DLC)/p-Si/Au (MIS)-type Schottky structures in a wide range of frequency and voltage at room temperature (RT)

Physica. B, Condensed matter, 2024-07, Vol.684, p.415959, Article 415959

2024

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The double Gaussian distribution of barrier heights in Al/TiO2/p-Si (metal-insulator-semiconductor) structures at low temperatures

Journal of applied physics, 2008-07, Vol.104 (1)

2008

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The effect of frequency and temperature on capacitance/conductance–voltage (C/G–V) characteristics of Au/n-GaAs Schottky barrier diodes (SBDs)

Materials science in semiconductor processing, 2014-07, Vol.23, p.1-6

2014

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On the temperature dependent dielectric properties, conductivity and resistivity of MIS structures at 1 MHz

Microelectronic engineering, 2012-03, Vol.91, p.154-158

2012

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Synthesis and characterization of pure and graphene (Gr)-doped organic/polymer nanocomposites to investigate the electrical and photoconductivity properties of Au/n-GaAs structures

Composites. Part B, Engineering, 2017-03, Vol.113, p.14-23

2017

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Analysis of interface states and series resistance of MIS Schottky diodes using the current–voltage ( I– V) characteristics

Microelectronic engineering, 2008, Vol.85 (1), p.233-237

2008

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Temperature dependence of forward and reverse bias current–voltage characteristics in Al–TiW–PtSi/n-Si Schottky barrier diodes with the amorphous diffusion barrier

Journal of alloys and compounds, 2013-03, Vol.552, p.423-429

2013

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Optoelectronic characterization of Bi-doped ZnO nanocomposites for Schottky interlayer applications

Physica. B, Condensed matter, 2023-12, Vol.670, p.415338, Article 415338

2023

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The investigation of current-conduction mechanisms (CCMs) in Au/ (0.07Zn-PVA)/n-4H-SiC (MPS) Schottky diodes (SDs) by using (I-V-T) measurements

Materials science in semiconductor processing, 2018-10, Vol.85, p.98-105

2018

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Origin of forward bias capacitance peak and intersection behavior of C and G/w of Ag/p-InP Schottky barrier diodes

Materials science in semiconductor processing, 2013-04, Vol.16 (2), p.344-351

2013

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A compare of electrical characteristics in Al/p-Si (MS) and Al/C20H12/p-Si (MPS) type diodes using current–voltage (I–V) and capacitance–voltage (C–V) measurements

Materials science in semiconductor processing, 2015-04, Vol.32, p.137-144

2015

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Temperature and voltage dependence of barrier height and ideality factor in Au/0.07 graphene-doped PVA/n-Si structures

Indian journal of physics, 2017-04, Vol.91 (4), p.421-430

2017

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Analysis of surface states and series resistance in Au/n-Si Schottky diodes with insulator layer using current–voltage and admittance–voltage characteristics

Vacuum, 2009-11, Vol.84 (3), p.363-368

2009

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The Structural and Electrical Properties of the Au/n-Si (MS) Diodes With Nanocomposites Interlayer (Ag-Doped ZnO/PVP) by Using the Simple Ultrasound-Assisted Method

Analysis of temperature dependent current-conduction mechanisms in Au/TiO2/n-4H-SiC (metal/insulator/semiconductor) type Schottky barrier diodes

On frequency and voltage dependent physical characteristics and interface states characterization of the metal semiconductor (MS) structures with (Ti:DLC) interlayer

Temperature dependent electrical and dielectric properties of Au/polyvinyl alcohol (Ni, Zn-doped)/n-Si Schottky diodes

C-V-f and G/ω-V-f characteristics of Au/(In2O3-PVP)/n-Si (MPS) structure

Analysis of electrical characteristics of Au/SiO2/n-Si (MOS) capacitors using the high-low frequency capacitance and conductance methods

Electrical parameters of Au/(%1Ni-PVA)/n-Si (MPS) structure: Surface states and their lifetimes

On the conduction mechanisms of Au/(Cu2O–CuO–PVA)/n-Si (MPS) Schottky barrier diodes (SBDs) using current–voltage–temperature (I–V–T) characteristics

The comparative electrical characteristics of Au/n-Si (MS) diodes with and without a 2% graphene cobalt-doped Ca3Co4Ga0.001Ox interfacial layer at room temperature

Series resistance and interface states effects on the C–V and G/w–V characteristics in Au/(Co3O4-doped PVA)/n-Si structures at room temperature

Electrical characteristics of Au/n-Si (MS) Schottky Diodes (SDs) with and without different rates (graphene + Ca1.9Pr0.1Co4Ox-doped poly(vinyl alcohol)) interfacial layer

Energy density distribution profiles of surface states, relaxation time and capture cross-section in Au /n-type 4H - SiC SBDs by using admittance spectroscopy method

A study on the complex dielectric (ε)/electric-modulus (M)/impedance (Z), tangent-loss (tanδ), and ac conductivity (σac) of the Al/(S:DLC)/p-Si/Au (MIS)-type Schottky structures in a wide range of frequency and voltage at room temperature (RT)

The double Gaussian distribution of barrier heights in Al/TiO2/p-Si (metal-insulator-semiconductor) structures at low temperatures

The effect of frequency and temperature on capacitance/conductance–voltage (C/G–V) characteristics of Au/n-GaAs Schottky barrier diodes (SBDs)

On the temperature dependent dielectric properties, conductivity and resistivity of MIS structures at 1 MHz

Synthesis and characterization of pure and graphene (Gr)-doped organic/polymer nanocomposites to investigate the electrical and photoconductivity properties of Au/n-GaAs structures

Analysis of interface states and series resistance of MIS Schottky diodes using the current–voltage ( I– V) characteristics

Temperature dependence of forward and reverse bias current–voltage characteristics in Al–TiW–PtSi/n-Si Schottky barrier diodes with the amorphous diffusion barrier

Optoelectronic characterization of Bi-doped ZnO nanocomposites for Schottky interlayer applications

The investigation of current-conduction mechanisms (CCMs) in Au/ (0.07Zn-PVA)/n-4H-SiC (MPS) Schottky diodes (SDs) by using (I-V-T) measurements

Origin of forward bias capacitance peak and intersection behavior of C and G/w of Ag/p-InP Schottky barrier diodes

A compare of electrical characteristics in Al/p-Si (MS) and Al/C20H12/p-Si (MPS) type diodes using current–voltage (I–V) and capacitance–voltage (C–V) measurements

Temperature and voltage dependence of barrier height and ideality factor in Au/0.07 graphene-doped PVA/n-Si structures

Analysis of surface states and series resistance in Au/n-Si Schottky diodes with insulator layer using current–voltage and admittance–voltage characteristics

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