UB Paderborn / Katalog / Suche / in CDI

Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment, 1994-03, Vol.340 (3), p.429-435

1994

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Polarized cathodoluminescence induced by low-energy spin-polarized electrons injected in p-GaAs(Cs,O)

Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment, 2005-01, Vol.536 (3), p.302-307

2005

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Determination of built-in electric fields in delta-doped GaAs structures by phase-sensitive photoreflectance

Solid-state electronics, 1994-04, Vol.37 (4), p.657-660

1994

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Unpinned behavior of the electronic properties of a p-GaAs(Cs,O) surface at room temperature

Surface science, 1995-07, Vol.331, p.1250-1255

1995

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Unpinned behavior of the Fermi level and photovoltage on p-(100) GaAs surface facilitated by deposition of cesium

Applied surface science, 1996-09, Vol.104, p.228-233

1996

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Emission of spin-polarized electrons from strained InGaP and InGaAsP photocathodes

Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment, 1996-10, Vol.381 (1), p.169-173

1996

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10 - Formation of GaAs Step-Terraced Surfaces by Annealing in Equilibrium Conditions

Advances in Semiconductor Nanostructures, 2017, p.255-277

2017

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Liquid phase epitaxial growth of elastically strained InGaAsP layers for spin-polarized electron sources

Journal of crystal growth, 1995-01, Vol.146 (1-4), p.310-313

1995

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Tunneling-assisted optical transitions in GaAs delta-doped superlattices

Physica. B, Condensed matter, 1991-12, Vol.175 (1), p.153-157

1991

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Electron emission from GaAs(Cs,O): Transition from negative to positive effective affinity

Relaxational kinetics of photoemission and photon-enhanced thermionic emission from p-GaAs surface with nonequilibrium Cs overlayers

Temperature dependence of photon-enhanced thermionic emission from GaAs surface with nonequilibrium Cs overlayers

Surface passivation and morphology of GaAs(1 0 0) treated in HCl-isopropanol solution

Photoemission and photon-enhanced thermionic emission: Effect of jump in electron mass

Kinetics of anticrossing between slip traces and vicinal steps on crystal surfaces

Thermal roughening of GaAs surface by unwinding dislocation-induced spiral atomic steps during sublimation

Anisotropy in Ostwald ripening and step-terraced surface formation on GaAs(001): Experiment and Monte Carlo simulation

Local monitoring of atomic steps on GaAs(001) surface under oxidation, wet removal of oxides and thermal smoothing

Monte Carlo simulation of GaAs(001) surface smoothing in equilibrium conditions

Structural and electronic transformations at the Cs/GaAs [formula omitted] interface

Kinetics of atomic smoothing GaAs(001) surface in equilibrium conditions

Formation and interaction of dislocation-induced and vicinal monatomic steps on a GaAs(001) surface under stress relaxation

Evolution of interface excitations under phase transition in two-dimensional layer of Cs on GaAs(1 0 0) and (1 1 1)

Thermal Smoothing and Roughening of GaAs Surfaces: Experiment and Monte Carlo Simulation

Composition and structure of chemically prepared GaAs(1 1 1)A and (1 1 1)B surfaces

New material for photoemission electron source: semiconductor alloy InGaAsP grown on GaAs substrate

Polarized cathodoluminescence induced by low-energy spin-polarized electrons injected in p-GaAs(Cs,O)

Determination of built-in electric fields in delta-doped GaAs structures by phase-sensitive photoreflectance

Unpinned behavior of the electronic properties of a p-GaAs(Cs,O) surface at room temperature

Unpinned behavior of the Fermi level and photovoltage on p-(100) GaAs surface facilitated by deposition of cesium

Emission of spin-polarized electrons from strained InGaP and InGaAsP photocathodes

10 - Formation of GaAs Step-Terraced Surfaces by Annealing in Equilibrium Conditions

Liquid phase epitaxial growth of elastically strained InGaAsP layers for spin-polarized electron sources

Tunneling-assisted optical transitions in GaAs delta-doped superlattices

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