UB Paderborn / Katalog / Suche / in CDI

Sortiert nach

Einfacher Volltextzugriff von (fast) überall

Installieren Sie die LibKey Nomad-Browsererweiterung und erhalten Sie von vielen Webseiten einfachen Zugriff auf lizenzierte Volltexte oder Open Access Publikationen. Mehr erfahren...

Effect of interface states on electron transport in 4H-SiC inversion layers

IEEE transactions on electron devices, 2001-09, Vol.48 (9), p.1870-1877

2001

Volltextzugriff (PDF)

Electrical properties of thermal oxide grown using dry oxidation on p -type 6H-silicon carbide

Applied physics letters, 1994-10, Vol.65 (17), p.2177-2178

1994

Volltextzugriff (PDF)

Single-Event Burnout and Avalanche Characteristics of Power DMOSFETs

IEEE transactions on nuclear science, 2006-12, Vol.53 (6), p.3379-3385

2006

Volltextzugriff (PDF)

Residual damage effects on gate contacts formed on SiC surfaces etched by using the amorphization technique

Journal of electronic materials, 1997-03, Vol.26 (3), p.108-112

1997

Volltextzugriff (PDF)

SiC device edge termination using finite area argon implantation

IEEE transactions on electron devices, 1997-06, Vol.44 (6), p.1013-1017

1997

Volltextzugriff (PDF)

A simple edge termination for silicon carbide devices with nearly ideal breakdown voltage

IEEE electron device letters, 1994-10, Vol.15 (10), p.394-395

1994

Volltextzugriff (PDF)

Planar edge termination for 4H-silicon carbide devices

IEEE transactions on electron devices, 1996-08, Vol.43 (8), p.1315-1317

1996

Volltextzugriff (PDF)

Process Dependence of Inversion Layer Mobility in 4H-SiC Devices

Materials science forum, 2000-05, Vol.338-342, p.1077-1080

2000

Volltextzugriff (PDF)

Kinetics of Enhanced Thermal Oxidation of Silicon Carbide Using Amorphization by Ion Implantation

Journal of the Electrochemical Society, 1997-03, Vol.144 (3), p.1135-1137

1997

Volltextzugriff (PDF)

Effect of Surface Preparation and Thermal Anneal on Electrical Characteristics of 4H-SiC Schottky Barrier Diodes

Materials science forum, 1998-01, Vol.264-268, p.929-932

1998

Volltextzugriff (PDF)

Hall Measurements of Inversion and Accumulation-Mode 4H-SiC MOSFETs

Materials science forum, 2002-04, Vol.389-393, p.1041-1044

2002

Volltextzugriff (PDF)

Low contact resistivity ohmic contacts to 6H-silicon carbide

Proceedings of IEEE International Electron Devices Meeting, 1993, p.691-694

1993

Volltextzugriff (PDF)

A novel method for etching trenches in silicon carbide

Journal of electronic materials, 1995-04, Vol.24 (4), p.311-314

1995

Volltextzugriff (PDF)

Thermal oxidation of 6H-silicon carbide at enhanced growth rates

IEEE electron device letters, 1994-10, Vol.15 (10), p.424-426

1994

Volltextzugriff (PDF)

Silicon carbide device fabrication based on amorphization using ion implantation

Alok, Dev

1996

Volltextzugriff (PDF)

Electrical properties of thermal oxide grown on n -type 6 H -silicon carbide

Applied physics letters, 1994-05, Vol.64 (21), p.2845-2846

1994

Volltextzugriff (PDF)

600V depletion stop trench IGBTs for appliance applications

2006 India International Conference on Power Electronics, 2006, p.68-73

2006

Volltextzugriff (PDF)

Vertical Schottky barrier diodes on 3C-SiC grown on Si

Proceedings of 1994 IEEE International Electron Devices Meeting, 1994, p.411-414

1994

Volltextzugriff (PDF)

Strategic design for inventory and production planning in closed-loop hybrid systems

International journal of production economics, 2017-01, Vol.183, p.345-353

2017

Volltextzugriff (PDF)

Biodiesel production from non-edible lignocellulosic biomass of Cassia fistula L. fruit pulp using oleaginous yeast Rhodosporidium kratochvilovae HIMPA1

Bioresource technology, 2015-12, Vol.197, p.91-98

2015

Volltextzugriff (PDF)

Multiclass CNN-based adaptive optimized filter for removal of impulse noise from digital images

The Visual computer, 2023-11, Vol.39 (11), p.5809-5822

2023

Volltextzugriff (PDF)

A Case of Partial Thickness Burn and Ruptured Tympanic Membrane from Rural Nepal

Wilderness & environmental medicine, 2022-03, Vol.33 (1), p.140-142

2022

Volltextzugriff (PDF)

Down-regulation of placental neuropilin-1 in fetal growth restriction

American journal of obstetrics and gynecology, 2016-02, Vol.214 (2), p.279.e1-279.e9

2016

Volltextzugriff (PDF)

A Cross-sectional Study to Determine Pregnancy Outcomes in Transabdominal Ultrasound-guided Embryo Transfer

Journal of the Anatomical Society of India, 2024-01, Vol.73 (1), p.60-63

2024

Volltextzugriff (PDF)

Phenanthrenoid Coelogin Isolated from Coelogyne cristata Exerts Osteoprotective Effect Through MAPK-Mitogen-Activated Protein Kinase Signaling Pathway

Calcified tissue international, 2021-07, Vol.109 (1), p.32-43

2021

Volltextzugriff (PDF)

1 – 25 von 53

Suche als RSS-Feed

Suchergebnisse filtern

Filter anzeigen

Nur zeigen

Geprüft (Peer-Review)
(36)
Mit Volltextzugriff
(37)

Publikationsform

Sprache

Englisch
(52)

Erscheinungsjahr

n.n

Thema

Science & Technology
(31)
Technology
(20)
Engineering
(11)
Life Sciences & Biomedicine
(10)
Materials Science
(10)
Physical Sciences
(10)
Engineering, Electrical & Electronic
(9)
Silicon Carbide
(9)
Physics
(8)
Materials Science, Multidisciplinary
(7)
Physics, Applied
(6)
Ion Implantation
(5)
Schottky Diodes
(5)
Humans
(4)
Implants
(4)
Obstetrics And Gynecology
(4)
Semiconductor Diodes
(4)
Argon
(3)
Biomedical And Life Sciences
(3)
Electrochemistry
(3)

15 weitere anzeigen...

Weniger anzeigen...

Menü

Weitere Dienste

Einstellungen

Effect of interface states on electron transport in 4H-SiC inversion layers

Electrical properties of thermal oxide grown using dry oxidation on p -type 6H-silicon carbide

Single-Event Burnout and Avalanche Characteristics of Power DMOSFETs

Residual damage effects on gate contacts formed on SiC surfaces etched by using the amorphization technique

SiC device edge termination using finite area argon implantation

A simple edge termination for silicon carbide devices with nearly ideal breakdown voltage

Planar edge termination for 4H-silicon carbide devices

Process Dependence of Inversion Layer Mobility in 4H-SiC Devices

Kinetics of Enhanced Thermal Oxidation of Silicon Carbide Using Amorphization by Ion Implantation

Effect of Surface Preparation and Thermal Anneal on Electrical Characteristics of 4H-SiC Schottky Barrier Diodes

Hall Measurements of Inversion and Accumulation-Mode 4H-SiC MOSFETs

Low contact resistivity ohmic contacts to 6H-silicon carbide

A novel method for etching trenches in silicon carbide

Thermal oxidation of 6H-silicon carbide at enhanced growth rates

Silicon carbide device fabrication based on amorphization using ion implantation

Electrical properties of thermal oxide grown on n -type 6 H -silicon carbide

600V depletion stop trench IGBTs for appliance applications

Vertical Schottky barrier diodes on 3C-SiC grown on Si

Strategic design for inventory and production planning in closed-loop hybrid systems

Biodiesel production from non-edible lignocellulosic biomass of Cassia fistula L. fruit pulp using oleaginous yeast Rhodosporidium kratochvilovae HIMPA1

Multiclass CNN-based adaptive optimized filter for removal of impulse noise from digital images

A Case of Partial Thickness Burn and Ruptured Tympanic Membrane from Rural Nepal

Down-regulation of placental neuropilin-1 in fetal growth restriction

A Cross-sectional Study to Determine Pregnancy Outcomes in Transabdominal Ultrasound-guided Embryo Transfer

Phenanthrenoid Coelogin Isolated from Coelogyne cristata Exerts Osteoprotective Effect Through MAPK-Mitogen-Activated Protein Kinase Signaling Pathway

Suchergebnisse filtern