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Selective Area Sublimation: A Simple Top-down Route for GaN-Based Nanowire Fabrication

Nano letters, 2016-03, Vol.16 (3), p.1863-1868

2016

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Growth and characterization of single quantum dots emitting at 1300 nm

Applied physics letters, 2005-03, Vol.86 (10), p.101908-101908-3

2005

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Ridge Polariton Laser: Different from a Semiconductor Edge-Emitting Laser

Physical review applied, 2022-10, Vol.18 (4), Article 044029

2022

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Optical properties of InxGa1−xN/GaN quantum-disks obtained by selective area sublimation

Journal of crystal growth, 2017-11, Vol.477, p.262-266

2017

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On the polarity of GaN micro- and nanowires epitaxially grown on sapphire (0001) and Si(111) substrates by metal organic vapor phase epitaxy and ammonia-molecular beam epitaxy

Applied physics letters, 2011-01, Vol.98 (1), p.011914-011914-3

2011

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From strong to weak coupling regime in a single GaN microwire up to room temperature

New journal of physics, 2012-07, Vol.14 (7), p.73004

2012

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Enhanced spontaneous emission in a photonic-crystal light-emitting diode

Applied physics letters, 2008-10, Vol.93 (14), p.143102-143102-3

2008

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Single-photon experiments at telecommunication wavelengths using nanowire superconducting detectors

Applied physics letters, 2007-07, Vol.91 (3), p.031106-031106-3

2007

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GaN nanocolumns on sapphire by ammonia-MBE: From self-organized to site-controlled growth

Journal of crystal growth, 2011-05, Vol.323 (1), p.326-329

2011

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Growth-interruption-induced low-density InAs quantum dots on GaAs

Journal of applied physics, 2008-10, Vol.104 (8), p.083508-083508-4

2008

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Structural and optical properties of low-density and In-rich InAs∕GaAs quantum dots

Journal of applied physics, 2007-01, Vol.101 (2)

2007

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Three-dimensional wavelength-scale confinement in quantum dot microcavity light-emitting diodes

Applied physics letters, 2004-09, Vol.85 (12), p.2178-2180

2004

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Single-Photon Detection System for Quantum Optics Applications

IEEE journal of selected topics in quantum electronics, 2007-07, Vol.13 (4), p.944-951

2007

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Erratum: "Single photon experiments at telecom wavelengths using nanowire superconducting detectors" [ Appl. Phys. Lett. 91 , 031106 ( 2007 ) ]

Applied physics letters, 2010-02, Vol.96 (8), p.089901-089901-1

2010

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Telecom-wavelength single-photon sources for quantum communications

Journal of physics. Condensed matter, 2007-06, Vol.19 (22), p.225005-225005 (14)

2007

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Quantum dot photonic crystal nanocavities at 1300 nm for telecom-wavelength single-photon sources

Physica status solidi. C, 2006-12, Vol.3 (11), p.3693-3696

2006

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Mode-locked waveguide polariton laser

Optica, 2024-07, Vol.11 (7), p.962

2024

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Optical properties of In^sub x^Ga^sub 1-x^N/GaN quantum-disks obtained by selective area sublimation

Journal of crystal growth, 2017-11, Vol.477, p.262

2017

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Towards a LED based on a photonic crystal nanocavity for single photon sources at telecom wavelength

Microelectronic engineering, 2008-05, Vol.85 (5-6), p.1162-1165

2008

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Strong Coupling of Exciton-Polaritons in a Bulk Ga N Planar Waveguide: Quantifying the Coupling Strength

Physical review applied, 2020-11, Vol.14 (5), Article 054060

2020

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"Plug and Play" single photons at 1.3 μ m approaching gigahertz operation

Applied physics letters, 2008-07, Vol.93 (2), p.021124-021124-3

2008

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Strong Coupling of Exciton-Polaritons in a Bulk GaN Planar Waveguide: Quantifying the Coupling Strength

Physical review applied, 2020-11, Vol.14 (5)

2020

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Fabrication and characterization of point defect photonic crystal nanocavities at telecom wavelength

Microelectronic engineering, 2007-05, Vol.84 (5), p.1480-1483

2007

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Time resolved measurements on low-density single quantum dots at 1300 nm

Physica status solidi. C, 2006-12, Vol.3 (11), p.3717-3721

2006

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Time-resolved and antibunching experiments on single quantum dots at 1300nm

Applied physics letters, 2006-03, Vol.88 (13)

2006

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Selective Area Sublimation: A Simple Top-down Route for GaN-Based Nanowire Fabrication

Growth and characterization of single quantum dots emitting at 1300 nm

Ridge Polariton Laser: Different from a Semiconductor Edge-Emitting Laser

Optical properties of InxGa1−xN/GaN quantum-disks obtained by selective area sublimation

On the polarity of GaN micro- and nanowires epitaxially grown on sapphire (0001) and Si(111) substrates by metal organic vapor phase epitaxy and ammonia-molecular beam epitaxy

From strong to weak coupling regime in a single GaN microwire up to room temperature

Enhanced spontaneous emission in a photonic-crystal light-emitting diode

Single-photon experiments at telecommunication wavelengths using nanowire superconducting detectors

GaN nanocolumns on sapphire by ammonia-MBE: From self-organized to site-controlled growth

Growth-interruption-induced low-density InAs quantum dots on GaAs

Structural and optical properties of low-density and In-rich InAs∕GaAs quantum dots

Three-dimensional wavelength-scale confinement in quantum dot microcavity light-emitting diodes

Single-Photon Detection System for Quantum Optics Applications

Erratum: "Single photon experiments at telecom wavelengths using nanowire superconducting detectors" [ Appl. Phys. Lett. 91 , 031106 ( 2007 ) ]

Telecom-wavelength single-photon sources for quantum communications

Quantum dot photonic crystal nanocavities at 1300 nm for telecom-wavelength single-photon sources

Mode-locked waveguide polariton laser

Optical properties of In^sub x^Ga^sub 1-x^N/GaN quantum-disks obtained by selective area sublimation

Towards a LED based on a photonic crystal nanocavity for single photon sources at telecom wavelength

Strong Coupling of Exciton-Polaritons in a Bulk Ga N Planar Waveguide: Quantifying the Coupling Strength

"Plug and Play" single photons at 1.3 μ m approaching gigahertz operation

Strong Coupling of Exciton-Polaritons in a Bulk GaN Planar Waveguide: Quantifying the Coupling Strength

Fabrication and characterization of point defect photonic crystal nanocavities at telecom wavelength

Time resolved measurements on low-density single quantum dots at 1300 nm

Time-resolved and antibunching experiments on single quantum dots at 1300nm

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