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Analysis of TID Process, Geometry, and Bias Condition Dependence in 14-nm FinFETs and Implications for RF and SRAM Performance

IEEE transactions on nuclear science, 2017-01, Vol.64 (1), p.285-292

2017

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Linear and non-linear patterns of internationalisation and funding in academic spin-offs

Venture capital (London), 2023-07, Vol.25 (3), p.285-315

2023

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Ozone-exposure and annealing effects on graphene-on-SiO2 transistors

Applied physics letters, 2012-09, Vol.101 (12)

2012

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On-Chip Measurement of Single-Event Transients in a 45 nm Silicon-on-Insulator Technology

IEEE transactions on nuclear science, 2012-12, Vol.59 (6), p.2748-2755

2012

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Effect of Device Variants in 32 nm and 45 nm SOI on SET Pulse Distributions

IEEE transactions on nuclear science, 2013-12, Vol.60 (6), p.4399-4404

2013

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Single-Event Upset Characterization Across Temperature and Supply Voltage for a 20-nm Bulk Planar CMOS Technology

IEEE transactions on nuclear science, 2015-12, Vol.62 (6), p.2613-2619

2015

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Heavy-Ion-Induced Current Transients in Bulk and SOI FinFETs

IEEE transactions on nuclear science, 2012-12, Vol.59 (6), p.2674-2681

2012

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Radiation effects in new materials for nano-devices

Microelectronic engineering, 2011-07, Vol.88 (7), p.1259-1264

2011

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Ion-Induced Energy Pulse Mechanism for Single-Event Burnout in High-Voltage SiC Power MOSFETs and Junction Barrier Schottky Diodes

IEEE transactions on nuclear science, 2020-01, Vol.67 (1), p.22-28

2020

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Sensitivity of High-Frequency RF Circuits to Total Ionizing Dose Degradation

IEEE transactions on nuclear science, 2013-12, Vol.60 (6), p.4498-4504

2013

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Effects of Breakdown Voltage on Single-Event Burnout Tolerance of High-Voltage SiC Power MOSFETs

IEEE transactions on nuclear science, 2021-07, Vol.68 (7), p.1430-1435

2021

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Alpha Particle-Induced Persistent Effects in a COTS 3-D-Integrated CMOS Imager

IEEE transactions on nuclear science, 2024-04, Vol.71 (4), p.759-769

2024

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Estimating Terrestrial Neutron-Induced SEB Cross Sections and FIT Rates for High-Voltage SiC Power MOSFETs

IEEE transactions on nuclear science, 2019-01, Vol.66 (1), p.337-343

2019

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Low-Energy Ion-Induced Single-Event Burnout in Gallium Oxide Schottky Diodes

IEEE transactions on nuclear science, 2023-04, Vol.70 (4), p.363-369

2023

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Charge Collection and Charge Sharing in a 130 nm CMOS Technology

IEEE transactions on nuclear science, 2006-12, Vol.53 (6), p.3253-3258

2006

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Defects and Low-Frequency Noise in Irradiated Black Phosphorus MOSFETs With HfO2 Gate Dielectrics

IEEE transactions on nuclear science, 2018-06, Vol.65 (6), p.1227-1238

2018

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A Bias-Dependent Single-Event Compact Model Implemented Into BSIM4 and a 90 nm CMOS Process Design Kit

IEEE transactions on nuclear science, 2009-12, Vol.56 (6), p.3152-3157

2009

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Probing the Single-Event Sensitivity of a COTS 3D-Integrated Imager With Alpha Particle Irradiation

IEEE transactions on nuclear science, 2023-04, Vol.70 (4), p.410-417

2023

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Mitigating Total-Ionizing-Dose-Induced Threshold-Voltage Shifts Using Back-Gate Biasing in 22-nm FD-SOI Transistors

IEEE transactions on nuclear science, 2022-03, Vol.69 (3), p.374-380

2022

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Multi-Cell Soft Errors at Advanced Technology Nodes

IEEE transactions on nuclear science, 2015-12, Vol.62 (6), p.2585-2591

2015

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Low-frequency noise and defects in copper and ruthenium resistors

Applied physics letters, 2019-05, Vol.114 (20)

2019

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In Situ Measurement of TID-Induced Leakage Using On-Chip Frequency Modulation

IEEE transactions on nuclear science, 2022-03, Vol.69 (3), p.367-373

2022

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Comparison of Total-Ionizing-Dose Effects in Bulk and SOI FinFETs at 90 and 295 K

IEEE transactions on nuclear science, 2019-06, Vol.66 (6), p.911-917

2019

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Geometry Dependence of Total-Dose Effects in Bulk FinFETs

IEEE transactions on nuclear science, 2014-12, Vol.61 (6), p.2951-2958

2014

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A Bias-Dependent Single-Event-Enabled Compact Model for Bulk FinFET Technologies

IEEE transactions on nuclear science, 2019-03, Vol.66 (3), p.635-642

2019

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Analysis of TID Process, Geometry, and Bias Condition Dependence in 14-nm FinFETs and Implications for RF and SRAM Performance

Linear and non-linear patterns of internationalisation and funding in academic spin-offs

Ozone-exposure and annealing effects on graphene-on-SiO2 transistors

On-Chip Measurement of Single-Event Transients in a 45 nm Silicon-on-Insulator Technology

Effect of Device Variants in 32 nm and 45 nm SOI on SET Pulse Distributions

Single-Event Upset Characterization Across Temperature and Supply Voltage for a 20-nm Bulk Planar CMOS Technology

Heavy-Ion-Induced Current Transients in Bulk and SOI FinFETs

Radiation effects in new materials for nano-devices

Ion-Induced Energy Pulse Mechanism for Single-Event Burnout in High-Voltage SiC Power MOSFETs and Junction Barrier Schottky Diodes

Sensitivity of High-Frequency RF Circuits to Total Ionizing Dose Degradation

Effects of Breakdown Voltage on Single-Event Burnout Tolerance of High-Voltage SiC Power MOSFETs

Alpha Particle-Induced Persistent Effects in a COTS 3-D-Integrated CMOS Imager

Estimating Terrestrial Neutron-Induced SEB Cross Sections and FIT Rates for High-Voltage SiC Power MOSFETs

Low-Energy Ion-Induced Single-Event Burnout in Gallium Oxide Schottky Diodes

Charge Collection and Charge Sharing in a 130 nm CMOS Technology

Defects and Low-Frequency Noise in Irradiated Black Phosphorus MOSFETs With HfO2 Gate Dielectrics

A Bias-Dependent Single-Event Compact Model Implemented Into BSIM4 and a 90 nm CMOS Process Design Kit

Probing the Single-Event Sensitivity of a COTS 3D-Integrated Imager With Alpha Particle Irradiation

Mitigating Total-Ionizing-Dose-Induced Threshold-Voltage Shifts Using Back-Gate Biasing in 22-nm FD-SOI Transistors

Multi-Cell Soft Errors at Advanced Technology Nodes

Low-frequency noise and defects in copper and ruthenium resistors

In Situ Measurement of TID-Induced Leakage Using On-Chip Frequency Modulation

Comparison of Total-Ionizing-Dose Effects in Bulk and SOI FinFETs at 90 and 295 K

Geometry Dependence of Total-Dose Effects in Bulk FinFETs

A Bias-Dependent Single-Event-Enabled Compact Model for Bulk FinFET Technologies

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