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Investigation of the interface between silicon nitride passivations and AlGaN/AlN/GaN heterostructures by C(V) characterization of metal-insulator-semiconductor-heterostructure capacitors

Journal of applied physics, 2010-07, Vol.108 (1), p.014508

2010

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A strong reduction in the density of near-interface traps at the SiO2∕4H-SiC interface by sodium enhanced oxidation

Journal of applied physics, 2007-06, Vol.101 (12), p.124502

2007

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Trap and Inversion Layer Mobility Characterization Using Hall Effect in Silicon Carbide-Based MOSFETs With Gate Oxides Grown by Sodium Enhanced Oxidation

IEEE transactions on electron devices, 2009-02, Vol.56 (2), p.162-169

2009

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A Study of Deep Energy-Level Traps at the 4H-SiC/SiO2 Interface and Their Passivation by Hydrogen

Materials science forum, 2009, Vol.600-603, p.755-758

2009

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Surface passivation oxide effects on the current gain of 4H-SiC bipolar junction transistors

Applied physics letters, 2008-02, Vol.92 (8), p.082113

2008

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Comparison between oxidation processes used to obtain the high inversion channel mobility in 4H-SiC MOSFETs

Semiconductor science and technology, 2007-04, Vol.22 (4), p.307-311

2007

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High field-effect mobility in n-channel Si face 4H-SiC MOSFETs with gate oxide grown on aluminum ion-implanted material

IEEE electron device letters, 2005-02, Vol.26 (2), p.96-98

2005

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Influence of Field Plates and Surface Traps on Microwave Silicon Carbide MESFETs

IEEE transactions on electron devices, 2008-08, Vol.55 (8), p.1875-1879

2008

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A Charge-to-Breakdown (QBD) Approach to SiC Gate Oxide Lifetime Extraction and Modeling

2020 32nd International Symposium on Power Semiconductor Devices and ICs (ISPSD), 2020, p.78-81

2020

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High Channel Mobility 4H-SiC MOSFETs

Materials science forum, 2006-10, Vol.527-529, p.961-966

2006

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Design and Fabrication of 4H-SiC RF MOSFETs

IEEE transactions on electron devices, 2007-12, Vol.54 (12), p.3138-3145

2007

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Investigation of avalanche ruggedness of 650 V Schottky-barrier rectifiers

Solid-state electronics, 2018-10, Vol.148, p.51-57

2018

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Sodium Enhanced Oxidation of Si-Face 4H-SiC: A Method to Remove Near Interface Traps

Materials science forum, 2007-01, Vol.556-557, p.487-492

2007

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1200 V 4H-SiC BJTs with a Common Emitter Current Gain of 60 and Low On-Resistance

Materials Science Forum, 2009, Vol.600-603, p.1151-1154

2009

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Time Resolved Gate Oxide Stress of 4H-SiC Planar MOSFETs and NMOS Capacitors

Materials Science Forum, 2016-05, Vol.858, p.611-614

2016

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Formation of Deep Traps at the 4H-SiC/SiO2 Interface when Utilizing Sodium Enhanced Oxidation

6th European Conference on Silicon Carbide and Related Materials, ECSCRM 2006, 2007, Vol.556-557, p.517-520

2007

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Influence of Passivation Oxide Properties on SiC Field-Plated Buried Gate MESFETs

Materials science forum, 2009-01, Vol.600-603, p.1103-1106

2009

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Differential Variable Base Charge Pumping ( \Delta-\text) for SiO2/SiC Interface Characterization

2019 31st International Symposium on Power Semiconductor Devices and ICs (ISPSD), 2019, p.163-166

2019

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On Shallow Interface States in n-Type 4H-SiC Metal-Oxide-Semiconductor Structures

Materials science forum, 2002-04, Vol.389-393, p.1005-1008

2002

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Silicon Carbide Schottky Rectifiers with Improved Avalanche Ruggedness

Materials Science Forum, 2016-05, Vol.858, p.777-781

2016

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Stable operation of high mobility 4H-SiC MOSFETs at elevated temperatures

Electronics letters, 2005-07, Vol.41 (14), p.825-826

2005

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High-power-density 4H-SiC RF MOSFETs

IEEE electron device letters, 2006-06, Vol.27 (6), p.469-471

2006

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High Frequency 4H-SiC MOSFETs

Materials Science Forum, 2007, Vol.556-557, p.795-798

2007

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Stability of Current Gain in SiC BJTs

Materials science forum, 2014-02, Vol.778-780, p.1017-1020

2014

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Transient Simulation of Microwave SiC MESFETs With Improved Trap Models

IEEE transactions on electron devices, 2010-03, Vol.57 (3), p.729-732

2010

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Investigation of the interface between silicon nitride passivations and AlGaN/AlN/GaN heterostructures by C(V) characterization of metal-insulator-semiconductor-heterostructure capacitors

A strong reduction in the density of near-interface traps at the SiO2∕4H-SiC interface by sodium enhanced oxidation

Trap and Inversion Layer Mobility Characterization Using Hall Effect in Silicon Carbide-Based MOSFETs With Gate Oxides Grown by Sodium Enhanced Oxidation

A Study of Deep Energy-Level Traps at the 4H-SiC/SiO2 Interface and Their Passivation by Hydrogen

Surface passivation oxide effects on the current gain of 4H-SiC bipolar junction transistors

Comparison between oxidation processes used to obtain the high inversion channel mobility in 4H-SiC MOSFETs

High field-effect mobility in n-channel Si face 4H-SiC MOSFETs with gate oxide grown on aluminum ion-implanted material

Influence of Field Plates and Surface Traps on Microwave Silicon Carbide MESFETs

A Charge-to-Breakdown (QBD) Approach to SiC Gate Oxide Lifetime Extraction and Modeling

High Channel Mobility 4H-SiC MOSFETs

Design and Fabrication of 4H-SiC RF MOSFETs

Investigation of avalanche ruggedness of 650 V Schottky-barrier rectifiers

Sodium Enhanced Oxidation of Si-Face 4H-SiC: A Method to Remove Near Interface Traps

1200 V 4H-SiC BJTs with a Common Emitter Current Gain of 60 and Low On-Resistance

Time Resolved Gate Oxide Stress of 4H-SiC Planar MOSFETs and NMOS Capacitors

Formation of Deep Traps at the 4H-SiC/SiO2 Interface when Utilizing Sodium Enhanced Oxidation

Influence of Passivation Oxide Properties on SiC Field-Plated Buried Gate MESFETs

Differential Variable Base Charge Pumping ( \Delta-\text) for SiO2/SiC Interface Characterization

On Shallow Interface States in n-Type 4H-SiC Metal-Oxide-Semiconductor Structures

Silicon Carbide Schottky Rectifiers with Improved Avalanche Ruggedness

Stable operation of high mobility 4H-SiC MOSFETs at elevated temperatures

High-power-density 4H-SiC RF MOSFETs

High Frequency 4H-SiC MOSFETs

Stability of Current Gain in SiC BJTs

Transient Simulation of Microwave SiC MESFETs With Improved Trap Models

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