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High voltage and high current density vertical GaN power diodes

Electronics letters, 2016-06, Vol.52 (13), p.1170-1171

2016

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High voltage GaN p-n diodes formed by selective area regrowth

Electronics letters, 2020-02, Vol.56 (4), p.207-209

2020

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Al0.3Ga0.7N PN diode with breakdown voltage >1600 V

Electronics letters, 2016-07, Vol.52 (15), p.1319-1321

2016

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Growth and characterization of Mg-doped AlGaN–AlN short-period superlattices for deep-UV optoelectronic devices

Journal of crystal growth, 2010-03, Vol.312 (6), p.756-761

2010

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Low dislocation density AlGaN epilayers by epitaxial overgrowth of patterned templates

Journal of crystal growth, 2014-02, Vol.388, p.76-82

2014

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Growth and design of deep-UV (240–290 nm) light emitting diodes using AlGaN alloys

Journal of crystal growth, 2004-12, Vol.272 (1), p.227-241

2004

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Temperature Analysis of Threshold Current in Infrared Vertical-Cavity Surface-Emitting Lasers

IEEE journal of quantum electronics, 2006-10, Vol.42 (10), p.1078-1083

2006

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Single-transverse-mode vertical-cavity lasers under continuous and pulsed operation

IEEE photonics technology letters, 2001-09, Vol.13 (9), p.927-929

2001

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Smooth and Vertical Facet Formation for AlGaN-Based Deep-UV Laser Diodes

Journal of electronic materials, 2009-04, Vol.38 (4), p.533-537

2009

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Dislocation reduction in AlGaN grown on patterned GaN

Journal of crystal growth, 2008-02, Vol.310 (4), p.766-776

2008

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Deep levels in p- and n-type InGaAsN for high-efficiency multi-junction III–V solar cells

Solar energy materials and solar cells, 2001, Vol.69 (1), p.85-91

2001

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Fabrication and performance of two-dimensional matrix addressable arrays of integrated vertical-cavity lasers and resonant cavity photodetectors

IEEE journal of selected topics in quantum electronics, 2002-07, Vol.8 (4), p.943-947

2002

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High-speed wavelength-division multiplexing and demultiplexing using monolithic quasi-planar VCSEL and resonant photodetector arrays with strained InGaAs quantum wells

IEEE photonics technology letters, 2000-02, Vol.12 (2), p.122-124

2000

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Picosecond polarization dynamics and noise in pulsed vertical-cavity surface-emitting lasers

IEEE journal of quantum electronics, 2005-03, Vol.41 (3), p.287-301

2005

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Al 0 .3 Ga 0.7 N PN diode with breakdown voltage >1600 V

Electronics letters, 2016-07, Vol.52 (15), p.1319-1321

2016

Volltextzugriff (PDF)

InGaAsN solar cells with 1.0 eV band gap, lattice matched to GaAs

Applied physics letters, 1999-02, Vol.74 (5), p.729-731

1999

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Comparison of wavelength splitting for selectively oxidized, ion implanted, and hybrid vertical-cavity surface-emitting lasers

IEEE journal of quantum electronics, 2003-05, Vol.39 (5), p.634-639

2003

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Electrically steerable lasers using wide-aperture VCSELs

IEEE photonics technology letters, 2001-06, Vol.13 (6), p.544-546

2001

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Two-dimensional 8×8 photoreceiver array and VCSEL drivers for high-throughput optical data links

IEEE journal of solid-state circuits, 2001-09, Vol.36 (9), p.1297-1302

2001

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Progress in the growth of mid-infrared InAsSb emitters by metal-organic chemical vapor deposition

Journal of crystal growth, 1998-12, Vol.195 (1), p.356-362

1998

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Understanding GaN nucleation layer evolution on sapphire

Journal of crystal growth, 2004-12, Vol.273 (1), p.86-99

2004

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Efficient double intracavity-contacted vertical-cavity surface-emitting lasers with very low-threshold and low-power dissipation designed for cryogenic applications

IEEE photonics technology letters, 2000-02, Vol.12 (2), p.113-115

2000

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Oxide-defined GaAs vertical-cavity surface-emitting lasers on Si substrates

IEEE photonics technology letters, 2000-02, Vol.12 (2), p.110-112

2000

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Effect of low dose -irradiation on DC performance of circular AlGaN/GaN high electron mobility transistors

Journal of vacuum science and technology. B, Nanotechnology & microelectronics, 2014-01, Vol.32 (3)

2014

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Intracavity frequency doubling of a diode-pumped external-cavity surface-emitting semiconductor laser

Optics letters, 1999-08, Vol.24 (16), p.1127

1999

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High voltage and high current density vertical GaN power diodes

High voltage GaN p-n diodes formed by selective area regrowth

Al0.3Ga0.7N PN diode with breakdown voltage >1600 V

Growth and characterization of Mg-doped AlGaN–AlN short-period superlattices for deep-UV optoelectronic devices

Low dislocation density AlGaN epilayers by epitaxial overgrowth of patterned templates

Growth and design of deep-UV (240–290 nm) light emitting diodes using AlGaN alloys

Temperature Analysis of Threshold Current in Infrared Vertical-Cavity Surface-Emitting Lasers

Single-transverse-mode vertical-cavity lasers under continuous and pulsed operation

Smooth and Vertical Facet Formation for AlGaN-Based Deep-UV Laser Diodes

Dislocation reduction in AlGaN grown on patterned GaN

Deep levels in p- and n-type InGaAsN for high-efficiency multi-junction III–V solar cells

Fabrication and performance of two-dimensional matrix addressable arrays of integrated vertical-cavity lasers and resonant cavity photodetectors

High-speed wavelength-division multiplexing and demultiplexing using monolithic quasi-planar VCSEL and resonant photodetector arrays with strained InGaAs quantum wells

Picosecond polarization dynamics and noise in pulsed vertical-cavity surface-emitting lasers

Al 0 .3 Ga 0.7 N PN diode with breakdown voltage >1600 V

InGaAsN solar cells with 1.0 eV band gap, lattice matched to GaAs

Comparison of wavelength splitting for selectively oxidized, ion implanted, and hybrid vertical-cavity surface-emitting lasers

Electrically steerable lasers using wide-aperture VCSELs

Two-dimensional 8×8 photoreceiver array and VCSEL drivers for high-throughput optical data links

Progress in the growth of mid-infrared InAsSb emitters by metal-organic chemical vapor deposition

Understanding GaN nucleation layer evolution on sapphire

Efficient double intracavity-contacted vertical-cavity surface-emitting lasers with very low-threshold and low-power dissipation designed for cryogenic applications

Oxide-defined GaAs vertical-cavity surface-emitting lasers on Si substrates

Effect of low dose -irradiation on DC performance of circular AlGaN/GaN high electron mobility transistors

Intracavity frequency doubling of a diode-pumped external-cavity surface-emitting semiconductor laser

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