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Al-rich AlGaN high electron mobility transistor gate metallization study up to 600 °C in air

Applied physics letters, 2024-03, Vol.124 (10)

2024

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Strain relaxation in AlGaN multilayer structures by inclined dislocations

Journal of applied physics, 2009-04, Vol.105 (8), p.083507-083507-13

2009

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An AlN/Al0.85Ga0.15N high electron mobility transistor

Applied physics letters, 2016-07, Vol.109 (3)

2016

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Effect of threading dislocations on the Bragg peakwidths of GaN, AlGaN, and AlN heterolayers

Applied physics letters, 2005-06, Vol.86 (24), p.241904-241904-3

2005

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Influence of optical polarization on the improvement of light extraction efficiency from reflective scattering structures in AlGaN ultraviolet light-emitting diodes

Applied physics letters, 2014-08, Vol.105 (6)

2014

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Tunnel-injected sub-260 nm ultraviolet light emitting diodes

Applied physics letters, 2017-05, Vol.110 (20)

2017

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Strong coupling in the sub-wavelength limit using metamaterial nanocavities

Nature communications, 2013-11, Vol.4 (1), p.2882-2882, Article 2882

2013

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Polarization-induced electrical conductivity in ultra-wide band gap AlGaN alloys

Applied physics letters, 2016-11, Vol.109 (22)

2016

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Reflective metal/semiconductor tunnel junctions for hole injection in AlGaN UV LEDs

Applied physics letters, 2017-07, Vol.111 (5)

2017

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Size dictated thermal conductivity of GaN

Journal of applied physics, 2016-09, Vol.120 (9)

2016

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Design and demonstration of ultra-wide bandgap AlGaN tunnel junctions

Applied physics letters, 2016-09, Vol.109 (12)

2016

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Electrical characterization of n-type Al0.30Ga0.70N Schottky diodes

Journal of applied physics, 2011-06, Vol.109 (11)

2011

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Effect of thickness and carrier density on the optical polarization of Al0.44Ga0.56N/Al0.55Ga0.45N quantum well layers

Journal of applied physics, 2014-05, Vol.115 (17)

2014

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High voltage and high current density vertical GaN power diodes

Electronics letters, 2016-06, Vol.52 (13), p.1170-1171

2016

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Ohmic contacts to Al‐rich AlGaN heterostructures

Physica status solidi. A, Applications and materials science, 2017-08, Vol.214 (8), p.1600842-n/a

2017

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X-ray topography characterization of gallium nitride substrates for power device development

Journal of crystal growth, 2020-08, Vol.544 (C), p.125709, Article 125709

2020

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Synchrotron X-ray topography characterization of high quality ammonothermal-grown gallium nitride substrates

Journal of crystal growth, 2020-12, Vol.551, p.125903, Article 125903

2020

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The influence of Al composition on point defect incorporation in AlGaN

Applied physics letters, 2012-01, Vol.100 (4), p.043509-043509-4

2012

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Design of p-type cladding layers for tunnel-injected UV-A light emitting diodes

Applied physics letters, 2016-11, Vol.109 (19)

2016

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Investigation of dry-etch-induced defects in >600 V regrown, vertical, GaN, p-n diodes using deep-level optical spectroscopy

Journal of applied physics, 2019-10, Vol.126 (14)

2019

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Proton irradiation effects on minority carrier diffusion length and defect introduction in homoepitaxial and heteroepitaxial n-GaN

Journal of applied physics, 2017-12, Vol.122 (23)

2017

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Silicon impurity-induced layer disordering of AlGaN/AlN superlattices

Applied physics letters, 2010-08, Vol.97 (5), p.051907-051907-3

2010

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Carrier Diffusion Lengths in Continuously Grown and Etched-and-Regrown GaN Pin Diodes

IEEE electron device letters, 2021-07, Vol.42 (7), p.1041-1044

2021

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Performance and Breakdown Characteristics of Irradiated Vertical Power GaN P-i-N Diodes

IEEE transactions on nuclear science, 2015-12, Vol.62 (6), p.2912-2918

2015

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IEEE_Xplore

Layer disordering and doping compensation of an intersubband AlGaN/AlN superlattice by silicon implantation

Applied physics letters, 2014-09, Vol.105 (13)

2014

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Al-rich AlGaN high electron mobility transistor gate metallization study up to 600 °C in air

Strain relaxation in AlGaN multilayer structures by inclined dislocations

An AlN/Al0.85Ga0.15N high electron mobility transistor

Effect of threading dislocations on the Bragg peakwidths of GaN, AlGaN, and AlN heterolayers

Influence of optical polarization on the improvement of light extraction efficiency from reflective scattering structures in AlGaN ultraviolet light-emitting diodes

Tunnel-injected sub-260 nm ultraviolet light emitting diodes

Strong coupling in the sub-wavelength limit using metamaterial nanocavities

Polarization-induced electrical conductivity in ultra-wide band gap AlGaN alloys

Reflective metal/semiconductor tunnel junctions for hole injection in AlGaN UV LEDs

Size dictated thermal conductivity of GaN

Design and demonstration of ultra-wide bandgap AlGaN tunnel junctions

Electrical characterization of n-type Al0.30Ga0.70N Schottky diodes

Effect of thickness and carrier density on the optical polarization of Al0.44Ga0.56N/Al0.55Ga0.45N quantum well layers

High voltage and high current density vertical GaN power diodes

Ohmic contacts to Al‐rich AlGaN heterostructures

X-ray topography characterization of gallium nitride substrates for power device development

Synchrotron X-ray topography characterization of high quality ammonothermal-grown gallium nitride substrates

The influence of Al composition on point defect incorporation in AlGaN

Design of p-type cladding layers for tunnel-injected UV-A light emitting diodes

Investigation of dry-etch-induced defects in >600 V regrown, vertical, GaN, p-n diodes using deep-level optical spectroscopy

Proton irradiation effects on minority carrier diffusion length and defect introduction in homoepitaxial and heteroepitaxial n-GaN

Silicon impurity-induced layer disordering of AlGaN/AlN superlattices

Carrier Diffusion Lengths in Continuously Grown and Etched-and-Regrown GaN Pin Diodes

Performance and Breakdown Characteristics of Irradiated Vertical Power GaN P-i-N Diodes

Layer disordering and doping compensation of an intersubband AlGaN/AlN superlattice by silicon implantation

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