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Systematic study of GeSn heterostructure-based light-emitting diodes towards mid-infrared applications

Journal of applied physics, 2016-07, Vol.120 (2)

2016

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Growth of Pseudomorphic GeSn at Low Pressure with Sn Composition of 16.7

Materials, 2021-12, Vol.14 (24), p.7637

2021

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Investigation of Silicon Nanowires Produced by Metal-Assisted Chemical Etching Method

IOP conference series. Materials Science and Engineering, 2020-01, Vol.671 (1), p.12028

2020

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Buffer-Free GeSn and SiGeSn Growth on Si Substrate Using In Situ SnD4 Gas Mixing

Journal of electronic materials, 2016-04, Vol.45 (4), p.2051-2058

2016

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Electrically Injected Mid-Infrared GeSn Laser on Si Operating at 140 K

IEEE journal of selected topics in quantum electronics, 2025-01, Vol.31 (1: SiGeSn Infrared Photon. and Quantum Electronics), p.1-7

2025

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Direct Growth of Ge1−xSnx Films on Si Using a Cold-Wall Ultra-High Vacuum Chemical-Vapor-Deposition System

Frontiers in materials, 2015-04, Vol.2

2015

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Investigation on the Formation and Propagation of Defects in GeSn Thin Films

ECS transactions, 2014-08, Vol.64 (6), p.895-901

2014

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Ternary CySi1-x-ySnx Alloys for Low-Cost High-Efficiency Multi-Junction Solar Cells

2021 IEEE 48th Photovoltaic Specialists Conference (PVSC), 2021, p.1750-1753

2021

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GePb Alloy Growth Using Layer Inversion Method

Journal of electronic materials, 2018-07, Vol.47 (7), p.3733-3740

2018

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Design and Analysis of a Novel Artificial Ankle-Foot Joint Mechanism

IOP conference series. Materials Science and Engineering, 2021-02, Vol.1067 (1), p.12140

2021

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SiyGe1−x−ySnx films grown on Si using a cold-wall ultrahigh-vacuum chemical vapor deposition system

Journal of vacuum science and technology. B, Nanotechnology & microelectronics, 2016-01, Vol.34 (1)

2016

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Broadband high efficiency silicon nanowire arrays with radial diversity within diamond-like geometrical distribution for photovoltaic applications

Optics express, 2015-07, Vol.23 (15), p.A767-A778

2015

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Optical Characterization of Si-Based Ge^sub 1-x^Sn^sub x^ Alloys with Sn Compositions up to 12

Journal of electronic materials, 2016-04, Vol.45 (4), p.2133

2016

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Optical Characterization of Si-Based Ge1−x Sn x Alloys with Sn Compositions up to 12

Journal of electronic materials, 2016-04, Vol.45 (4), p.2133-2141

2016

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Buffer-Free GeSn and SiGeSn Growth on Si Substrate Using In Situ SnD^sub 4^ Gas Mixing

Journal of electronic materials, 2016-04, Vol.45 (4), p.2051

2016

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Optical Characterization of Si-Based Ge1−xSnx Alloys with Sn Compositions up to 12

Journal of electronic materials, 2016, Vol.45 (4), p.2133-2141

2016

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CMOS Compatible Growth of High Quality Ge, SiGe and SiGeSn for Photonic Device Applications

ECS transactions, 2015, Vol.69 (5), p.269-278

2015

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Enhancement of Material Quality of (Si)GeSn Films Grown by SnCl 4 Precursor

ECS transactions, 2015-09, Vol.69 (5), p.279-286

2015

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Fabrication Process Optimization of A High- Power Double-Sided Cooled SiC Power Module

2023 IEEE Energy Conversion Congress and Exposition (ECCE), 2023, p.5900-5905

2023

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Low Pressure Growth of Pseudomorphic Gesn with 16.7% Sn Incorporation

Meeting abstracts (Electrochemical Society), 2022-10, Vol.MA2022-02 (32), p.1163-1163

2022

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Enhancement of Material Quality of (Si)GeSn Films Grown by SnCl 4 Precursor

Meeting abstracts (Electrochemical Society), 2015-07, Vol.MA2015-02 (18), p.843-843

2015

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CMOS Compatible Growth of High Quality Ge, SiGe and SiGeSn for Photonic Device Applications

Meeting abstracts (Electrochemical Society), 2015-07, Vol.MA2015-02 (18), p.842-842

2015

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Investigation on the Formation and Propagation of Defects in GeSn Thin Films

Meeting abstracts (Electrochemical Society), 2014-08, Vol.MA2014-02 (35), p.1845-1845

2014

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Systematic study of GeSn heterostructure-based light-emitting diodes towards mid-infrared applications

Growth of Pseudomorphic GeSn at Low Pressure with Sn Composition of 16.7

Investigation of Silicon Nanowires Produced by Metal-Assisted Chemical Etching Method

Buffer-Free GeSn and SiGeSn Growth on Si Substrate Using In Situ SnD4 Gas Mixing

Electrically Injected Mid-Infrared GeSn Laser on Si Operating at 140 K

Direct Growth of Ge1−xSnx Films on Si Using a Cold-Wall Ultra-High Vacuum Chemical-Vapor-Deposition System

Investigation on the Formation and Propagation of Defects in GeSn Thin Films

Ternary CySi1-x-ySnx Alloys for Low-Cost High-Efficiency Multi-Junction Solar Cells

GePb Alloy Growth Using Layer Inversion Method

Design and Analysis of a Novel Artificial Ankle-Foot Joint Mechanism

SiyGe1−x−ySnx films grown on Si using a cold-wall ultrahigh-vacuum chemical vapor deposition system

Broadband high efficiency silicon nanowire arrays with radial diversity within diamond-like geometrical distribution for photovoltaic applications

Optical Characterization of Si-Based Ge^sub 1-x^Sn^sub x^ Alloys with Sn Compositions up to 12

Optical Characterization of Si-Based Ge1−x Sn x Alloys with Sn Compositions up to 12

Buffer-Free GeSn and SiGeSn Growth on Si Substrate Using In Situ SnD^sub 4^ Gas Mixing

Optical Characterization of Si-Based Ge1−xSnx Alloys with Sn Compositions up to 12

CMOS Compatible Growth of High Quality Ge, SiGe and SiGeSn for Photonic Device Applications

Enhancement of Material Quality of (Si)GeSn Films Grown by SnCl 4 Precursor

Fabrication Process Optimization of A High- Power Double-Sided Cooled SiC Power Module

Low Pressure Growth of Pseudomorphic Gesn with 16.7% Sn Incorporation

Enhancement of Material Quality of (Si)GeSn Films Grown by SnCl 4 Precursor

CMOS Compatible Growth of High Quality Ge, SiGe and SiGeSn for Photonic Device Applications

Investigation on the Formation and Propagation of Defects in GeSn Thin Films

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