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The Effect of the Ionizing Radiation Intensity on the Response of MOS Structures

Semiconductors (Woodbury, N.Y.), 2021-02, Vol.55 (2), p.207-213

Aleksandrov, O. V.

2021

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On the Size Effect in MOS Structures under Ionizing Irradiation

Semiconductors (Woodbury, N.Y.), 2022-04, Vol.56 (4), p.241-245

Aleksandrov, O. V.

2022

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Model of the Negative-Bias Temperature Instability of p-MOS Transistors

Semiconductors (Woodbury, N.Y.), 2020-02, Vol.54 (2), p.233-239

Aleksandrov, O. V.

2020

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Latent Accumulation of Surface States in MOS Structures after Exposure to Ionizing Radiation

Semiconductors (Woodbury, N.Y.), 2021-06, Vol.55 (6), p.578-582

Aleksandrov, O. V.

2021

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Dispersive Transport of Hydrogen in MOS Structures after Exposure to Ionizing Radiation

Semiconductors (Woodbury, N.Y.), 2020-10, Vol.54 (10), p.1215-1219

Aleksandrov, O. V.

2020

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Model of the Effect of the Gate Bias on MOS Structures under Ionizing Radiation

Semiconductors (Woodbury, N.Y.), 2020-02, Vol.54 (2), p.240-245

2020

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The Effect of Ionizing Irradiation on the Charge Distribution and Breakdown of MOSFETs

Semiconductors (Woodbury, N.Y.), 2022-03, Vol.56 (3), p.160-163

2022

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Model of Breakdown of MOS-Structures by the Mechanism of Anode Hydrogen Release

Semiconductors (Woodbury, N.Y.), 2024, Vol.58 (3), p.197-201

Aleksandrov, O. V.

2024

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Influence of Annealing Temperature on Electrically Active Centers in Silicon Implanted with Germanium Ions

Semiconductors (Woodbury, N.Y.), 2019-02, Vol.53 (2), p.153-155

2019

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Influence of traps in silicon dioxide on the breakdown of MOS structures

Semiconductors (Woodbury, N.Y.), 2017-08, Vol.51 (8), p.1062-1066

Aleksandrov, O. V.

2017

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Model for Charge Accumulation in n- and p-MOS Transistors during Tunneling Electron Injection from a Gate

Semiconductors (Woodbury, N.Y.), 2018-06, Vol.52 (6), p.783-788

2018

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High-Temperature Annealing as a Method for the Silicon Nanoclusters Growth in Stoichiometric Silicon Dioxide

Journal of electronic materials, 2018-07, Vol.47 (7), p.3969-3973

2018

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Charge Accumulation in MOS Structures with a Polysilicon Gate under Tunnel Injection

Semiconductors (Woodbury, N.Y.), 2018-12, Vol.52 (13), p.1732-1737

2018

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Boron Diffusion in Silicon Carbide

Materials science forum, 2013-01, Vol.740-742, p.561-564

2013

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Diffusion Al from implanted SiC layer

Physica. B, Condensed matter, 2009-12, Vol.404 (23-24), p.4764-4767

2009

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A model of formation of fixed charge in thermal silicon dioxide

Semiconductors (Woodbury, N.Y.), 2011-04, Vol.45 (4), p.467-473

2011

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Effect of germanium on redistribution of boron and phosphorus during thermal oxidation of silicon

Semiconductor science and technology, 2003-02, Vol.18 (2), p.139-143

2003

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Effect of Thermal Oxidation on the Segregation of Phosphorus Implanted into Silicon

Inorganic materials, 2005-09, Vol.41 (9), p.972-980

2005

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Публічне управління в Україні: стан та перспективи

Naukovi zapysky Instytutu zakonodavstva Verkhovnoï Rady Ukraïny, 2019-06 (3), p.100-107

Aleksandrov, O. V.

2019

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On the effect of bias on the behavior of MOS structures subjected to ionizing radiation

Semiconductors (Woodbury, N.Y.), 2015-06, Vol.49 (6), p.774-779

Aleksandrov, O. V.

2015

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ІЗ ІСТОРІЇ КОТЛОБУДУВАННЯ: ВНЕСОК ІНЖЕНЕРА В. Г. ШУХОВА В ЙОГО РОЗВИТОК

Ìstorìâ nauki ì tehnìki (Kiïv. Online), 2018-06, Vol.8 (1(12)), p.5-11

O. V. Aleksandrov

2018

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Model of the behavior of MOS structures under ionizing irradiation

Semiconductors (Woodbury, N.Y.), 2014-04, Vol.48 (4), p.505-510

Aleksandrov, O. V.

2014

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Out-diffusion of impurity via the kick-out mechanism during gettering

Semiconductors (Woodbury, N.Y.), 2007-09, Vol.41 (9), p.1048-1055

2007

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Simulation of the concentration dependence of boron diffusion in silicon

Semiconductors (Woodbury, N.Y.), 2004-03, Vol.38 (3), p.258-261

Aleksandrov, O. V.

2004

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Growth of silicon nanoclusters in thermal silicon dioxide under annealing in an atmosphere of nitrogen

Semiconductors (Woodbury, N.Y.), 2016-06, Vol.50 (6), p.791-794

2016

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The Effect of the Ionizing Radiation Intensity on the Response of MOS Structures

On the Size Effect in MOS Structures under Ionizing Irradiation

Model of the Negative-Bias Temperature Instability of p-MOS Transistors

Latent Accumulation of Surface States in MOS Structures after Exposure to Ionizing Radiation

Dispersive Transport of Hydrogen in MOS Structures after Exposure to Ionizing Radiation

Model of the Effect of the Gate Bias on MOS Structures under Ionizing Radiation

The Effect of Ionizing Irradiation on the Charge Distribution and Breakdown of MOSFETs

Model of Breakdown of MOS-Structures by the Mechanism of Anode Hydrogen Release

Influence of Annealing Temperature on Electrically Active Centers in Silicon Implanted with Germanium Ions

Influence of traps in silicon dioxide on the breakdown of MOS structures

Model for Charge Accumulation in n- and p-MOS Transistors during Tunneling Electron Injection from a Gate

High-Temperature Annealing as a Method for the Silicon Nanoclusters Growth in Stoichiometric Silicon Dioxide

Charge Accumulation in MOS Structures with a Polysilicon Gate under Tunnel Injection

Boron Diffusion in Silicon Carbide

Diffusion Al from implanted SiC layer

A model of formation of fixed charge in thermal silicon dioxide

Effect of germanium on redistribution of boron and phosphorus during thermal oxidation of silicon

Effect of Thermal Oxidation on the Segregation of Phosphorus Implanted into Silicon

Публічне управління в Україні: стан та перспективи

On the effect of bias on the behavior of MOS structures subjected to ionizing radiation

ІЗ ІСТОРІЇ КОТЛОБУДУВАННЯ: ВНЕСОК ІНЖЕНЕРА В. Г. ШУХОВА В ЙОГО РОЗВИТОК

Model of the behavior of MOS structures under ionizing irradiation

Out-diffusion of impurity via the kick-out mechanism during gettering

Simulation of the concentration dependence of boron diffusion in silicon

Growth of silicon nanoclusters in thermal silicon dioxide under annealing in an atmosphere of nitrogen

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