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Pentagon adjacency as a determinant of fullerene stability

Physical chemistry chemical physics : PCCP, 1999, Vol.1 (12), p.2913-2918

1999

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Low-dose tamoxifen in the treatment of breast ductal intraepithelial neoplasia: results of a large observational study

Annals of oncology, 2010-05, Vol.21 (5), p.949-954

2010

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WEIGHT LOSS AFTER LAPAROSCOPIC SLEEVE GASTRECTOMY: THE 4-YEARS EXPERIENCE AT MAGGIORE DELLA CARITÀ HOSPITAL (NOVARA, PIEDMONT)

Nutrition (Burbank, Los Angeles County, Calif.), 2021-08, Vol.87-88, p.111322, Article 111322

2021

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Atomistic simulation of ion channeling in heavily doped Si:As

Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 2005-04, Vol.230 (1-4), p.112-117

2005

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Ion-channeling analysis of As relocation in heavily doped Si:As irradiated with high-energy ions

Journal of applied physics, 2003-11, Vol.94 (9), p.6215-6217

2003

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Channeling characterization of defects in silicon: an atomistic approach

Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 2005-04, Vol.230 (1-4), p.185-192

2005

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Ion implantation induced swelling in 6H-SiC

Applied physics letters, 1997-06, Vol.70 (25), p.3425-3427

1997

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Determination of He electronic energy loss in crystalline Si by Monte-Carlo simulation of Rutherford backscattering–channeling spectra

Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 2000-09, Vol.170 (1), p.1-9

2000

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Analysis of ion implanted silicon by RBS-channeling: influence of the damage model

Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 2004-06, Vol.219, p.232-235

2004

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Periferie della storia: il passato come rappresentazione nelle culture omeoglotte

1. ed., 2004

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Computer simulation of ion channeling in Si containing structurally relaxed point defects

Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 2003-09, Vol.211 (1), p.50-54

2003

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Investigation of heavily damaged ion implanted Si by atomistic simulation of Rutherford backscattering channeling spectra

Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 2005-04, Vol.230 (1-4), p.613-618

2005

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Stopping and damage parameters for Monte Carlo simulation of MeV implants in crystalline Si

Journal of applied physics, 1997-12, Vol.82 (12), p.5958-5964

1997

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Effects of implementing the Simple Biosphere Model in a general circulation model

Journal of the atmospheric sciences, 1989-09, Vol.46 (18), p.2757-2782

1989

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Different methods for the determination of damage profiles in Si from RBS-channeling spectra: a comparison

Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 1996-09, Vol.118 (1), p.128-132

1996

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Case mix at the European Institute of Oncology: first report of the Tumour Registry, 2000-2002

Ecancermedicalscience, 2009-01, Vol.3, p.149-149

2009

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Monte Carlo simulation of ion implantation in crystalline SiC

Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 1996-12, Vol.120 (1), p.147-150

1996

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Propensity Rules for the Stability of Odd-Numbered Fullerenes: A Semiempirical Proposal

Journal of the American Chemical Society, 1996-03, Vol.118 (11), p.2734-2739

1996

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Charge states distribution of 3350 keV He ions channeled in silicon

Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 2002-06, Vol.193 (1), p.113-117

2002

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Atomistic model of defects for the simulation of RBS-channeling measurements in ion irradiated silicon

AIP conference proceedings, 2003, Vol.680 (1)

2003

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Binary collision approximation modeling of ion-induced damage effects in crystalline 6H–SiC

Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 1999-01, Vol.148 (1), p.573-577

1999

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Expression of metastasis-associated genes h-mts1 (S100A4) and nm23 in carcinoma of breast is related to disease progression

DNA and cell biology, 1998-04, Vol.17 (4), p.335-342

1998

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The Monte Carlo Binary Collision Approximation Applied to the Simulation of the Ion Implantation Process in Single Crystal SiC: High Dose Effects

Materials science forum, 2001-01, Vol.353-356, p.599-602

2001

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Characterization of a splice variant of metastasis-associated h-mts1 (S100A4) gene expressed in human infiltrating carcinomas of the breast

DNA and cell biology, 1998-12, Vol.17 (12), p.1003

1998

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RBS-channeling analysis of virgin 6HSiC: Experiments and Monte Carlo simulations

Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 1998-03, Vol.136, p.1267-1271

1998

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Pentagon adjacency as a determinant of fullerene stability

Low-dose tamoxifen in the treatment of breast ductal intraepithelial neoplasia: results of a large observational study

WEIGHT LOSS AFTER LAPAROSCOPIC SLEEVE GASTRECTOMY: THE 4-YEARS EXPERIENCE AT MAGGIORE DELLA CARITÀ HOSPITAL (NOVARA, PIEDMONT)

Atomistic simulation of ion channeling in heavily doped Si:As

Ion-channeling analysis of As relocation in heavily doped Si:As irradiated with high-energy ions

Channeling characterization of defects in silicon: an atomistic approach

Ion implantation induced swelling in 6H-SiC

Determination of He electronic energy loss in crystalline Si by Monte-Carlo simulation of Rutherford backscattering–channeling spectra

Analysis of ion implanted silicon by RBS-channeling: influence of the damage model

Periferie della storia: il passato come rappresentazione nelle culture omeoglotte

Computer simulation of ion channeling in Si containing structurally relaxed point defects

Investigation of heavily damaged ion implanted Si by atomistic simulation of Rutherford backscattering channeling spectra

Stopping and damage parameters for Monte Carlo simulation of MeV implants in crystalline Si

Effects of implementing the Simple Biosphere Model in a general circulation model

Different methods for the determination of damage profiles in Si from RBS-channeling spectra: a comparison

Case mix at the European Institute of Oncology: first report of the Tumour Registry, 2000-2002

Monte Carlo simulation of ion implantation in crystalline SiC

Propensity Rules for the Stability of Odd-Numbered Fullerenes: A Semiempirical Proposal

Charge states distribution of 3350 keV He ions channeled in silicon

Atomistic model of defects for the simulation of RBS-channeling measurements in ion irradiated silicon

Binary collision approximation modeling of ion-induced damage effects in crystalline 6H–SiC

Expression of metastasis-associated genes h-mts1 (S100A4) and nm23 in carcinoma of breast is related to disease progression

The Monte Carlo Binary Collision Approximation Applied to the Simulation of the Ion Implantation Process in Single Crystal SiC: High Dose Effects

Characterization of a splice variant of metastasis-associated h-mts1 (S100A4) gene expressed in human infiltrating carcinomas of the breast

RBS-channeling analysis of virgin 6HSiC: Experiments and Monte Carlo simulations

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