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Modified feedback ECL gate for Gb/s applications

IEEE journal of solid-state circuits, 1999-02, Vol.34 (2), p.205-211

1999

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Transimpedance amplifiers based on Si/SiGe MODFETs

Electronics letters, 1998-03, Vol.34 (5), p.499

1998

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Monolithic retimed receiver array with dynamic reference level comparator for 4/spl times/2 Gb/s synchronous optical data link

IEEE photonics technology letters, 1997-01, Vol.9 (1), p.82-84

1997

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Si bipolar 14 Gb/s 1:4-demultiplexer IC for system applications

IEEE journal of solid-state circuits, 1996-01, Vol.31 (1), p.54-60

1996

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1.5 μm lithography Si- and Si/SiGe-bipolar transistors for ICs operating at 15 Gbit/s and above

Electronics letters, 1991, Vol.27 (16), p.1465

1991

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Erratum: 1.5 μm lithography Si- and Si/SiGe-bipolar transistors for ICs operating at 15 Gbit/s and above

Electronics letters, 1991, Vol.27 (20), p.1888

1991

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Si/SiGe HBTs for application in low power ICs

Solid-state electronics, 1996-04, Vol.39 (4), p.471-480

1996

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Broadband single-ended to differential signal converter embedded in silicon decision circuit

Electronics letters, 1995-08, Vol.31 (17), p.1400-1401

1995

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A 12 Gb/s Si bipolar 4:1-multiplexer IC for SDH systems

IEEE journal of solid-state circuits, 1995-02, Vol.30 (2), p.129-132

1995

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Fully self-aligned double mesa SiGe-HBT with external transistor optimisation

Electronics letters, 1996-09, Vol.32 (19), p.1830

1996

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Silicon bipolar 1:16-demultiplexer for 10 Gbit/s fibre optic communication system

Electronics letters, 1994-07, Vol.30 (15), p.1214-1216, Article 1214

1994

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2.5 Gb/s DC coupled retimed optical transducer with a dynamic reference voltage comparator

IEEE photonics technology letters, 1996-05, Vol.8 (5), p.685-687

1996

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A 20-Gb/s silicon bipolar 1:4-demultiplexer IC

Journal of lightwave technology, 1994-02, Vol.12 (2), p.320-324, Article 320

1994

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DC characteristics and stability behaviour of high-speed Si/SiGe HBTs undoped SiGe spacer between base and collector

Electronics letters, 1992-06, Vol.28 (13), p.1187-1188

1992

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Base contact resistance limits to lateral scaling of fully self-aligned double mesa SiGe-HBTs

Solid-state electronics, 1997, Vol.41 (8), p.1105-1110

1997

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16Gbit/s multiplexer IC using double mesa Si/SiGe heterojunction bipolar transistors

Electronics letters, 1993, Vol.29 (25), p.2185-2187

1993

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12.5 Gbit/s silicon bipolar 1:4-demultiplexer IC

Electronics letters, 1992, Vol.28 (23), p.2160, Article 2160

1992

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Simulation of influence of undoped spacer layers in Si/SiGe-HBTs on transit frequency

Electronics letters, 1993-01, Vol.29 (1), p.85-87

1993

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A Si-bipolar technology for optical fiber transmission rates above 10 Gb/s

IEEE journal on selected areas in communications, 1991-06, Vol.9 (5), p.652-655

1991

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11.4 Gbit/s silicon bipolar multiplexer IC employing 2 μm lithography transistors

Electronics letters, 1989-12, Vol.25 (25), p.1684, Article 1684

1989

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43 Gb/s Modulator Driver Integrated Circuit with 6 VppOutput Voltage for Long Haul Transmission Systems with FEC

2002 28TH European Conference on Optical Communication, 2002, Vol.3, p.1-2

2002

Volltextzugriff (PDF)

Influence of power supply bypass networks on transimpedance amplifier stability

Proceedings of 40th Midwest Symposium on Circuits and Systems. Dedicated to the Memory of Professor Mac Van Valkenburg, 1997, Vol.1, p.213-216 vol.1

1997

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Low temperature ultra-scaled fully self-aligned transistor technology (LOTUS) for SiGe-HBTs

Proceedings IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits, 1995, p.142-151

1995

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Silicon bipolar 14 Gb/s 1:4-demultiplexer IC regarding system requirements

Proceedings of IEEE Bipolar/BiCMOS Circuits and Technology Meeting, 1994, p.103-106

1994

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A methodology of phenotyping ICU patients from EHR data: High-fidelity, personalized, and interpretable phenotypes estimation

Journal of biomedical informatics, 2023-12, Vol.148, p.104547-104547, Article 104547

2023

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Modified feedback ECL gate for Gb/s applications

Transimpedance amplifiers based on Si/SiGe MODFETs

Monolithic retimed receiver array with dynamic reference level comparator for 4/spl times/2 Gb/s synchronous optical data link

Si bipolar 14 Gb/s 1:4-demultiplexer IC for system applications

1.5 μm lithography Si- and Si/SiGe-bipolar transistors for ICs operating at 15 Gbit/s and above

Erratum: 1.5 μm lithography Si- and Si/SiGe-bipolar transistors for ICs operating at 15 Gbit/s and above

Si/SiGe HBTs for application in low power ICs

Broadband single-ended to differential signal converter embedded in silicon decision circuit

A 12 Gb/s Si bipolar 4:1-multiplexer IC for SDH systems

Fully self-aligned double mesa SiGe-HBT with external transistor optimisation

Silicon bipolar 1:16-demultiplexer for 10 Gbit/s fibre optic communication system

2.5 Gb/s DC coupled retimed optical transducer with a dynamic reference voltage comparator

A 20-Gb/s silicon bipolar 1:4-demultiplexer IC

DC characteristics and stability behaviour of high-speed Si/SiGe HBTs undoped SiGe spacer between base and collector

Base contact resistance limits to lateral scaling of fully self-aligned double mesa SiGe-HBTs

16Gbit/s multiplexer IC using double mesa Si/SiGe heterojunction bipolar transistors

12.5 Gbit/s silicon bipolar 1:4-demultiplexer IC

Simulation of influence of undoped spacer layers in Si/SiGe-HBTs on transit frequency

A Si-bipolar technology for optical fiber transmission rates above 10 Gb/s

11.4 Gbit/s silicon bipolar multiplexer IC employing 2 μm lithography transistors

43 Gb/s Modulator Driver Integrated Circuit with 6 VppOutput Voltage for Long Haul Transmission Systems with FEC

Influence of power supply bypass networks on transimpedance amplifier stability

Low temperature ultra-scaled fully self-aligned transistor technology (LOTUS) for SiGe-HBTs

Silicon bipolar 14 Gb/s 1:4-demultiplexer IC regarding system requirements

A methodology of phenotyping ICU patients from EHR data: High-fidelity, personalized, and interpretable phenotypes estimation

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