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Erratum: Highly Adiabatic Time-Optimal Quantum Driving at Low Energy Cost [Phys. Rev. Lett. 129, 180402 (2022)]

Physical review letters, 2023-02, Vol.130 (8), p.089901-089901, Article 089901

2023

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Time-resolved electron transport with quantum trajectories

Journal of computational electronics, 2013-09, Vol.12 (3), p.405-419

2013

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Self-consistent time-dependent boundary conditions for static and dynamic simulations of small electron devices

Journal of computational electronics, 2013-12, Vol.12 (4), p.730-742

2013

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COMPUTATION OF QUANTUM ELECTRICAL CURRENTS THROUGH THE RAMO–SHOCKLEY–PELLEGRINI THEOREM WITH TRAJECTORIES

Fluctuation and noise letters, 2012-09, Vol.11 (3), p.1242008

2012

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EFFECT OF GATE-ALL-AROUND TRANSISTOR GEOMETRY ON THE HIGH-FREQUENCY NOISE: ANALYTICAL DISCUSSION

Fluctuation and noise letters, 2012-09, Vol.11 (3), p.1241002

2012

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Intrinsic noise in aggressively scaled field-effect transistors

Journal of statistical mechanics, 2009-01, Vol.2009 (1), p.P01044

2009

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Robust weak-measurement protocol for Bohmian velocities

Physical review. A, Atomic, molecular, and optical physics, 2013-05, Vol.87 (5), Article 052124

2013

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Many-particle Hamiltonian for open systems with full Coulomb interaction: Application to classical and quantum time-dependent simulations of nanoscale electron devices

Physical review. B, Condensed matter and materials physics, 2009-02, Vol.79 (7), Article 075315

2009

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Electric power in nanoscale devices with full Coulomb interaction

International journal of numerical modelling, 2010-07, Vol.23 (4-5), p.354-363

2010

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Monte Carlo simulations of nanometric devices beyond the “mean-field” approximation

Journal of computational electronics, 2008-09, Vol.7 (3), p.197-200

2008

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Time-dependent boundary conditions with lead-sample Coulomb correlations: Application to classical and quantum nanoscale electron device simulators

Physical review. B, Condensed matter and materials physics, 2010-08, Vol.82 (8), Article 085301

2010

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Boundary conditions with Pauli exclusion and charge neutrality: application to the Monte Carlo simulation of ballistic nanoscale devices

Journal of computational electronics, 2008-09, Vol.7 (3), p.213-216

2008

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Improving the intrinsic cut-off frequency of gate-all-around quantum-wire transistors without channel length scaling

Applied physics letters, 2013-04, Vol.102 (17)

2013

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Time-Dependent Many-Particle Simulation for Resonant Tunneling Diodes: Interpretation of an Analytical Small-Signal Equivalent Circuit

IEEE transactions on electron devices, 2011-07, Vol.58 (7), p.2104-2112

2011

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Many-particle transport in the channel of quantum wire double-gate field-effect transistors with charged atomistic impurities

Journal of applied physics, 2010-08, Vol.108 (4)

2010

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Many-particle transport in the channel of quantum wire double-gatefield-effect transistors with charged atomistic impurities

Journal of applied physics, 2010-08, Vol.108 (4), p.043706-043706-11

2010

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Towards frequency performance improvement of emerging devices without length scaling

2013 Spanish Conference on Electron Devices, 2013, p.37-40

2013

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Study of the effect of device geometry on the AC behaviour of nanoelectronic devices

Proceedings of the 8th Spanish Conference on Electron Devices, CDE'2011, 2011, p.1-4

2011

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The BITLLES simulator for nanoscale devices

2010 14th International Workshop on Computational Electronics, 2010, p.1-4

2010

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Many-particle Monte Carlo Approach to Electron Transport

Albareda, G

2011

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Bohmian formulation of Full Counting Statistics in mesoscopic systems

2011 21st International Conference on Noise and Fluctuations, 2011, p.246-249

2011

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Towards the control of power dissipation through the use of many-body Coulomb correlations

2012 15th International Workshop on Computational Electronics, 2012, p.1-4

2012

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Accurate predictions of terahertz noise in ultra-small devices: A limiting factor for their practical application?

2013 22nd International Conference on Noise and Fluctuations (ICNF), 2013, p.1-4

2013

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Peru climbs rapidly up the ranks of the world gold producers

Engineering and mining journal (1926), 2000-04, Vol.201 (4), p.17

Albareda, Guillermo

2000

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Geometry engineering for the RF behavior of low-dimensional gate-all-around transistors

2012 15th International Workshop on Computational Electronics, 2012, p.1-4

2012

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Erratum: Highly Adiabatic Time-Optimal Quantum Driving at Low Energy Cost [Phys. Rev. Lett. 129, 180402 (2022)]

Time-resolved electron transport with quantum trajectories

Self-consistent time-dependent boundary conditions for static and dynamic simulations of small electron devices

COMPUTATION OF QUANTUM ELECTRICAL CURRENTS THROUGH THE RAMO–SHOCKLEY–PELLEGRINI THEOREM WITH TRAJECTORIES

EFFECT OF GATE-ALL-AROUND TRANSISTOR GEOMETRY ON THE HIGH-FREQUENCY NOISE: ANALYTICAL DISCUSSION

Intrinsic noise in aggressively scaled field-effect transistors

Robust weak-measurement protocol for Bohmian velocities

Many-particle Hamiltonian for open systems with full Coulomb interaction: Application to classical and quantum time-dependent simulations of nanoscale electron devices

Electric power in nanoscale devices with full Coulomb interaction

Monte Carlo simulations of nanometric devices beyond the “mean-field” approximation

Time-dependent boundary conditions with lead-sample Coulomb correlations: Application to classical and quantum nanoscale electron device simulators

Boundary conditions with Pauli exclusion and charge neutrality: application to the Monte Carlo simulation of ballistic nanoscale devices

Improving the intrinsic cut-off frequency of gate-all-around quantum-wire transistors without channel length scaling

Time-Dependent Many-Particle Simulation for Resonant Tunneling Diodes: Interpretation of an Analytical Small-Signal Equivalent Circuit

Many-particle transport in the channel of quantum wire double-gate field-effect transistors with charged atomistic impurities

Many-particle transport in the channel of quantum wire double-gatefield-effect transistors with charged atomistic impurities

Towards frequency performance improvement of emerging devices without length scaling

Study of the effect of device geometry on the AC behaviour of nanoelectronic devices

The BITLLES simulator for nanoscale devices

Many-particle Monte Carlo Approach to Electron Transport

Bohmian formulation of Full Counting Statistics in mesoscopic systems

Towards the control of power dissipation through the use of many-body Coulomb correlations

Accurate predictions of terahertz noise in ultra-small devices: A limiting factor for their practical application?

Peru climbs rapidly up the ranks of the world gold producers

Geometry engineering for the RF behavior of low-dimensional gate-all-around transistors

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