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N‐polar deep‐recess GaN MISHEMT with enhanced ft·LG by gate dielectric thinning

Electronics letters, 2024-07, Vol.60 (13), p.n/a

2024

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Demonstration of HCl-Based Selective Wet Etching for N-Polar GaN with 42:1 Selectivity to Al0.24Ga0.76N

Crystals (Basel), 2024-06, Vol.14 (6), p.485

2024

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High Performance N-Polar GaN Transistors at W- and D-Band

Akso, Emre

2023

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Record RF Power Performance at 94 GHz From Millimeter-Wave N-Polar GaN-on-Sapphire Deep-Recess HEMTs

IEEE transactions on electron devices, 2023-04, Vol.70 (4), p.1-6

2023

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First Demonstration of an N-Polar InAlGaN/GaN HEMT

IEEE electron device letters, 2024-03, Vol.45 (3), p.328-331

2024

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N‐polar deep‐recess GaN MISHEMT with enhanced f t ·L G by gate dielectric thinning

Electronics letters, 2024-07, Vol.60 (13)

2024

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Demonstration of HCl-Based Selective Wet Etching for N-Polar GaN with 42:1 Selectivity to Al[sub.0.24]Ga[sub.0.76]N

Crystals (Basel), 2024-06, Vol.14 (6)

2024

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N-Polar Deep Recess GaN HEMT With a TiN Schottky Gate Contact Demonstrating 53.4% PAE and 3.7 W/mm Associated Pout at 94 GHz

IEEE microwave and wireless technology letters (Print), 2024-07, Vol.34 (7), p.907-910

2024

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IEEE_Xplore

N-Polar Deep Recess GaN HEMT With a TiN Schottky Gate Contact Demonstrating 53.4% PAE and 3.7 W/mm Associated P out at 94 GHz

IEEE microwave and wireless technology letters (Print), 2024-07, Vol.34 (7), p.907-910

2024

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First Demonstration of Four-Finger N-polar GaN HEMT Exhibiting Record 712-mW Output Power With 31.7% PAE at 94 GHz

IEEE microwave and wireless technology letters (Print), 2023-06, Vol.33 (6), p.1-4

2023

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IEEE_Xplore

N-Polar GaN MISHEMT With Bias-Insensitive Linearity at 30 GHz

IEEE microwave and wireless technology letters (Print), 2024-03, Vol.34 (3), p.287-290

2024

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IEEE_Xplore

Surrogate modeling and variability analysis of on‐chip spiral inductors

International journal of numerical modelling, 2018-09, Vol.31 (5), p.n/a

2018

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Record 1 W output power from a single N-Polar GaN MISHEMT at 94 GHz

2023 Device Research Conference (DRC), 2023, p.1-2

2023

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IEEE_Xplore

Schottky Barrier Gate N-Polar GaN-on-Sapphire Deep Recess HEMT With Record 10.5 dB Linear Gain and 50.2% PAE at 94 GHz

IEEE microwave and wireless technology letters (Print), 2024-02, Vol.34 (2), p.183-186

2024

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IEEE_Xplore

Record D-Band Performance From Prematched N-Polar GaN-on-Sapphire Transistor With 2 W/mm and 10.6% PAE at 132 GHz

IEEE microwave and wireless technology letters (Print), 2024-04, Vol.34 (4), p.1-4

2024

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IEEE_Xplore

First Comparison of Active and Passive Load Pull at W-Band

2023 101st ARFTG Microwave Measurement Conference (ARFTG), 2023, p.1-4

2023

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A variability analysis algorithm for spiral inductors using enhanced single-π model

2016 National Conference on Electrical, Electronics and Biomedical Engineering (ELECO), 2016, p.442-446

2016

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N‐polar deep‐recess GaN MISHEMT with enhanced ft·LG by gate dielectric thinning

Demonstration of HCl-Based Selective Wet Etching for N-Polar GaN with 42:1 Selectivity to Al0.24Ga0.76N

High Performance N-Polar GaN Transistors at W- and D-Band

Record RF Power Performance at 94 GHz From Millimeter-Wave N-Polar GaN-on-Sapphire Deep-Recess HEMTs

First Demonstration of an N-Polar InAlGaN/GaN HEMT

N‐polar deep‐recess GaN MISHEMT with enhanced f t ·L G by gate dielectric thinning

Demonstration of HCl-Based Selective Wet Etching for N-Polar GaN with 42:1 Selectivity to Al[sub.0.24]Ga[sub.0.76]N

N-Polar Deep Recess GaN HEMT With a TiN Schottky Gate Contact Demonstrating 53.4% PAE and 3.7 W/mm Associated Pout at 94 GHz

N-Polar Deep Recess GaN HEMT With a TiN Schottky Gate Contact Demonstrating 53.4% PAE and 3.7 W/mm Associated P out at 94 GHz

First Demonstration of Four-Finger N-polar GaN HEMT Exhibiting Record 712-mW Output Power With 31.7% PAE at 94 GHz

N-Polar GaN MISHEMT With Bias-Insensitive Linearity at 30 GHz

Surrogate modeling and variability analysis of on‐chip spiral inductors

Record 1 W output power from a single N-Polar GaN MISHEMT at 94 GHz

Schottky Barrier Gate N-Polar GaN-on-Sapphire Deep Recess HEMT With Record 10.5 dB Linear Gain and 50.2% PAE at 94 GHz

Record D-Band Performance From Prematched N-Polar GaN-on-Sapphire Transistor With 2 W/mm and 10.6% PAE at 132 GHz

First Comparison of Active and Passive Load Pull at W-Band

A variability analysis algorithm for spiral inductors using enhanced single-π model

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