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Features of MIS Structures Based on Insulating PbSnTe:In Films with the Composition in the Vicinity of the Band Inversion Related to Their Ferroelectric Properties

Semiconductors (Woodbury, N.Y.), 2020-10, Vol.54 (10), p.1325-1331

2020

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Topology of PbSnTe:In Layers Versus Indium Concentration

Technical physics, 2021-07, Vol.66 (7), p.878-882

2021

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Sign-Alternating Photoconductivity in PbSnTe:In Films in the Space-Charge-Limited Current Regime

Semiconductors (Woodbury, N.Y.), 2020-08, Vol.54 (8), p.951-955

2020

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Two-Dimensional Pyroelectric Material with Heat-Transfer Modulation

Surface investigation, x-ray, synchrotron and neutron techniques, 2024, Vol.18 (3), p.536-541

2024

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Kinetically driven thermal roughening of semiconductor surfaces: experiment on GaAs and Monte Carlo simulation

Physica scripta, 2023-03, Vol.98 (3), p.35702

2023

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Anisotropy in Ostwald ripening and step-terraced surface formation on GaAs(001): Experiment and Monte Carlo simulation

Applied surface science, 2015-12, Vol.359, p.372-379

2015

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Monte Carlo simulation of GaAs(001) surface smoothing in equilibrium conditions

Applied surface science, 2015-04, Vol.333, p.141-146

2015

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Formation and interaction of dislocation-induced and vicinal monatomic steps on a GaAs(001) surface under stress relaxation

Scripta materialia, 2016-03, Vol.114, p.125-128

2016

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Optimization of conditions for thermal smoothing GaAs surfaces

Journal of physics. Conference series, 2018-03, Vol.993 (1), p.12010

2018

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Preparation of an Atomically Clean and Structurally Ordered Bi2Se3 (0001) Surface without Molecular Beams and Vacuum Cleaving

Russian journal of physical chemistry. B, 2022-06, Vol.16 (3), p.479-482

2022

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Origin of Degradation of the CaF2/BaF2 Buffer Layers on Si(111)

Doklady. a journal of the Russian Academy of Sciences. Physics, 2020, Vol.65 (1), p.15-17

2020

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Thermodynamic and kinetic roughening: Monte Carlo simulation and experiment on GaAs

Journal of physics. Conference series, 2017-03, Vol.816 (1), p.12008

2017

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Surface Сonductivity Dynamics in PbSnTe:In Films in the Vicinity of a Band Inversion

Semiconductors (Woodbury, N.Y.), 2019-09, Vol.53 (9), p.1182-1186

2019

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Modification of the Surface Properties of PbSnTe〈In〉 Epitaxial Layers with Composition near Band Inversion

Technical physics, 2019-11, Vol.64 (11), p.1704-1708

2019

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Thermal roughening of GaAs surface by dislocation-induced step-flow sublimation

Journal of physics. Conference series, 2016-08, Vol.741 (1), p.12042

2016

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Thermal Smoothing and Roughening of GaAs Surfaces: Experiment and Monte Carlo Simulation

Semiconductors (Woodbury, N.Y.), 2018-05, Vol.52 (5), p.618-621

2018

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Semiconductor surfaces with negative electron affinity

e-Journal of Surface Science and Nanotechnology, 2007/03/07, Vol.5, pp.80-88

2007

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Formation of well-ordered surfaces of Bi2-xSbxTe3-ySey topological insulators using wet chemical treatment

Applied surface science, 2024-03, Vol.649, p.159122, Article 159122

2024

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Surface chemical treatment effect on (111) PbSnTe < In > Topological crystalline insulator films

Applied surface science, 2021-12, Vol.569, p.150930, Article 150930

2021

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Thermal roughening of GaAs surface by unwinding dislocation-induced spiral atomic steps during sublimation

Applied surface science, 2020-11, Vol.529, p.147090, Article 147090

2020

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Local monitoring of atomic steps on GaAs(001) surface under oxidation, wet removal of oxides and thermal smoothing

Applied surface science, 2017-06, Vol.406, p.307-311

2017

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Kinetics of atomic smoothing GaAs(001) surface in equilibrium conditions

Applied surface science, 2013-03, Vol.269, p.2-6

2013

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Field Effect and Spin-Valve Effect in the PbSnTe Topological Crystalline Insulator

Optoelectronics, instrumentation, and data processing, 2020-09, Vol.56 (5), p.553-557

2020

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Step-terraced morphology of GaAs(001) substrates prepared at quasiequilibrium conditions

Applied physics letters, 2009-03, Vol.94 (10)

2009

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Step-terraced morphology of GaAs(001) substrates preparedat quasiequilibrium conditions

Applied physics letters, 2009-03, Vol.94 (10), p.101908-101908-3

2009

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Features of MIS Structures Based on Insulating PbSnTe:In Films with the Composition in the Vicinity of the Band Inversion Related to Their Ferroelectric Properties

Topology of PbSnTe:In Layers Versus Indium Concentration

Sign-Alternating Photoconductivity in PbSnTe:In Films in the Space-Charge-Limited Current Regime

Two-Dimensional Pyroelectric Material with Heat-Transfer Modulation

Kinetically driven thermal roughening of semiconductor surfaces: experiment on GaAs and Monte Carlo simulation

Anisotropy in Ostwald ripening and step-terraced surface formation on GaAs(001): Experiment and Monte Carlo simulation

Monte Carlo simulation of GaAs(001) surface smoothing in equilibrium conditions

Formation and interaction of dislocation-induced and vicinal monatomic steps on a GaAs(001) surface under stress relaxation

Optimization of conditions for thermal smoothing GaAs surfaces

Preparation of an Atomically Clean and Structurally Ordered Bi2Se3 (0001) Surface without Molecular Beams and Vacuum Cleaving

Origin of Degradation of the CaF2/BaF2 Buffer Layers on Si(111)

Thermodynamic and kinetic roughening: Monte Carlo simulation and experiment on GaAs

Surface Сonductivity Dynamics in PbSnTe:In Films in the Vicinity of a Band Inversion

Modification of the Surface Properties of PbSnTe〈In〉 Epitaxial Layers with Composition near Band Inversion

Thermal roughening of GaAs surface by dislocation-induced step-flow sublimation

Thermal Smoothing and Roughening of GaAs Surfaces: Experiment and Monte Carlo Simulation

Semiconductor surfaces with negative electron affinity

Formation of well-ordered surfaces of Bi2-xSbxTe3-ySey topological insulators using wet chemical treatment

Surface chemical treatment effect on (111) PbSnTe < In > Topological crystalline insulator films

Thermal roughening of GaAs surface by unwinding dislocation-induced spiral atomic steps during sublimation

Local monitoring of atomic steps on GaAs(001) surface under oxidation, wet removal of oxides and thermal smoothing

Kinetics of atomic smoothing GaAs(001) surface in equilibrium conditions

Field Effect and Spin-Valve Effect in the PbSnTe Topological Crystalline Insulator

Step-terraced morphology of GaAs(001) substrates prepared at quasiequilibrium conditions

Step-terraced morphology of GaAs(001) substrates preparedat quasiequilibrium conditions

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