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Mercury(II) selective sensors based on AlGaN/GaN transistors

Analytica chimica acta, 2016-11, Vol.943, p.1-7

2016

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Intrinsic broadening of the mobility spectrum of bulk n-type GaAs

New journal of physics, 2014-11, Vol.16 (11), p.113033-15

2014

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Design Principles for High QE HgCdTe Infrared Photodetectors for eSWIR Applications

Journal of electronic materials, 2022-09, Vol.51 (9), p.4742-4751

2022

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Random dopant fluctuations and statistical variability in n-channel junctionless FETs

Nanotechnology, 2018-01, Vol.29 (2), p.025203-025203

2018

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A method of removing the valence band discontinuity in HgCdTe-based nBn detectors

Applied physics letters, 2014-09, Vol.105 (12)

2014

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Interdiffusion Effects on Bandstructure in HgTe-CdTe Superlattices for VLWIR Imaging Applications

Journal of electronic materials, 2019-10, Vol.48 (10), p.6159-6168

2019

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Engineering the Bandgap of Unipolar HgCdTe-Based nBn Infrared Photodetectors

Journal of electronic materials, 2015-01, Vol.44 (1), p.158-166

2015

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Thin film three-dimensional topological insulator metal-oxide-semiconductor field-effect-transistors: A candidate for sub-10 nm devices

Journal of applied physics, 2014-08, Vol.116 (8)

2014

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Junctionless Nanowire Transistor (JNT): Properties and design guidelines

Solid-state electronics, 2011-11, Vol.65-66, p.33-37

2011

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Junctionless Multiple-Gate Transistors for Analog Applications

IEEE transactions on electron devices, 2011-08, Vol.58 (8), p.2511-2519

2011

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Inversion layer electron mobility distribution in fully-depleted silicon-on-insulator MOSFETs

Solid-state electronics, 2021-09, Vol.183, p.108074, Article 108074

2021

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Electronic Transport in InAs/GaSb Nanostructured Type-II Superlattices for Infrared Sensing and Imaging Applications

2023 IEEE Nanotechnology Materials and Devices Conference (NMDC), 2023, p.162-163

2023

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Electronic transport parameters of indium zinc oxide thin films after Al2O3/HfO2 top-dielectric formation annealing

Microelectronic engineering, 2017-06, Vol.178, p.164-167

2017

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Thermal broadening of the electron mobility distribution in FD-SOI MOSFETs

2020 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS), 2020, p.1-4

2020

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Hole Transport in Arsenic-Doped Hg1−xCdxTe with x ≥ 0.5

Journal of electronic materials, 2016-09, Vol.45 (9), p.4686-4691

2016

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Hole Transport in Arsenic-Doped Hg^sub 1-x^Cd^sub x^Te with x [greater than or equal to] 0.5

Journal of electronic materials, 2016-09, Vol.45 (9), p.4686

2016

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Hole Transport in Arsenic-Doped Hg1−x Cd x Te with x ≥ 0.5

Journal of electronic materials, 2016-09, Vol.45 (9), p.4686-4691

2016

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Recent Developments in Mercury Cadmium Telluride IR Detector Technology

ECS transactions, 2015-09, Vol.69 (14), p.61-75

2015

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Drain Breakdown Voltage in MuGFETs: Influence of Physical Parameters

IEEE transactions on electron devices, 2008-12, Vol.55 (12), p.3503-3506

2008

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Influence of Elastic and Inelastic Electron-Phonon Interaction on Quantum Transport in Multigate Silicon Nanowire MOSFETs

IEEE transactions on electron devices, 2011-04, Vol.58 (4), p.1029-1037

2011

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Nanowire to Single-Electron Transistor Transition in Trigate SOI MOSFETs

IEEE transactions on electron devices, 2011-01, Vol.58 (1), p.26-32

2011

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Electronic transport parameters of indium zinc oxide thin films after Al^sub 2^O^sub 3^/HfO^sub 2^ top-dielectric formation annealing

Microelectronic engineering, 2017-06, Vol.178, p.164

2017

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Band-to-band tunnelling (BTBT) in HgCdTe-based nBn detectors for LWIR applications

2014 Conference on Optoelectronic and Microelectronic Materials & Devices, 2014, p.223-225

2014

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Intrinsic broadening of the mobility spectrum of bulk n-type GaAs

2014 Conference on Optoelectronic and Microelectronic Materials & Devices, 2014, p.105-108

2014

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Random dopant variation in junctionless nanowire transistors

IEEE 2011 International SOI Conference, 2011, p.1-2

2011

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Mercury(II) selective sensors based on AlGaN/GaN transistors

Intrinsic broadening of the mobility spectrum of bulk n-type GaAs

Design Principles for High QE HgCdTe Infrared Photodetectors for eSWIR Applications

Random dopant fluctuations and statistical variability in n-channel junctionless FETs

A method of removing the valence band discontinuity in HgCdTe-based nBn detectors

Interdiffusion Effects on Bandstructure in HgTe-CdTe Superlattices for VLWIR Imaging Applications

Engineering the Bandgap of Unipolar HgCdTe-Based nBn Infrared Photodetectors

Thin film three-dimensional topological insulator metal-oxide-semiconductor field-effect-transistors: A candidate for sub-10 nm devices

Junctionless Nanowire Transistor (JNT): Properties and design guidelines

Junctionless Multiple-Gate Transistors for Analog Applications

Inversion layer electron mobility distribution in fully-depleted silicon-on-insulator MOSFETs

Electronic Transport in InAs/GaSb Nanostructured Type-II Superlattices for Infrared Sensing and Imaging Applications

Electronic transport parameters of indium zinc oxide thin films after Al2O3/HfO2 top-dielectric formation annealing

Thermal broadening of the electron mobility distribution in FD-SOI MOSFETs

Hole Transport in Arsenic-Doped Hg1−xCdxTe with x ≥ 0.5

Hole Transport in Arsenic-Doped Hg^sub 1-x^Cd^sub x^Te with x [greater than or equal to] 0.5

Hole Transport in Arsenic-Doped Hg1−x Cd x Te with x ≥ 0.5

Recent Developments in Mercury Cadmium Telluride IR Detector Technology

Drain Breakdown Voltage in MuGFETs: Influence of Physical Parameters

Influence of Elastic and Inelastic Electron-Phonon Interaction on Quantum Transport in Multigate Silicon Nanowire MOSFETs

Nanowire to Single-Electron Transistor Transition in Trigate SOI MOSFETs

Electronic transport parameters of indium zinc oxide thin films after Al^sub 2^O^sub 3^/HfO^sub 2^ top-dielectric formation annealing

Band-to-band tunnelling (BTBT) in HgCdTe-based nBn detectors for LWIR applications

Intrinsic broadening of the mobility spectrum of bulk n-type GaAs

Random dopant variation in junctionless nanowire transistors

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