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Blue Light: A Fascinating Journey (Nobel Lecture)

Angewandte Chemie (International ed.), 2015-06, Vol.54 (27), p.7750-7763

Akasaki, Isamu

International ed. in English, 2015

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GaN-Based p-n Junction Blue-Light-Emitting Devices

Proceedings of the IEEE, 2013-10, Vol.101 (10), p.2200-2210

Akasaki, Isamu

2013

Volltextzugriff (PDF)

Key inventions in the history of nitride-based blue LED and LD

Journal of crystal growth, 2007-03, Vol.300 (1), p.2-10

Akasaki, Isamu

2007

Volltextzugriff (PDF)

GaN-based tunnel junctions and optoelectronic devices grown by metal-organic vapor-phase epitaxy

Semiconductor science and technology, 2021-06, Vol.36 (6), p.63001

2021

Volltextzugriff (PDF)

Nobel Lecture: Fascinated journeys into blue light

Reviews of modern physics, 2015-10, Vol.87 (4), p.1119-1131

Akasaki, Isamu

2015

Volltextzugriff (PDF)

Breakthroughs in Improving Crystal Quality of GaN and Invention of the p–n Junction Blue-Light-Emitting Diode

Japanese Journal of Applied Physics, 2006-12, Vol.45 (12R), p.9001

2006

Volltextzugriff (PDF)

High-performance solar-blind Al0.6Ga0.4N/Al0.5Ga0.5N MSM type photodetector

Applied physics letters, 2017-11, Vol.111 (19)

2017

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Color-tunable emission in coaxial GaInN/GaN multiple quantum shells grown on three-dimensional nanostructures

Applied surface science, 2021-02, Vol.539, p.148279, Article 148279

2021

Volltextzugriff (PDF)

Light confinement and high current density in UVB laser diode structure using Al composition-graded p-AlGaN cladding layer

Applied physics letters, 2019-05, Vol.114 (19)

2019

Volltextzugriff (PDF)

n-type GaN surface etched green light-emitting diode to reduce non-radiative recombination centers

Applied physics letters, 2021-01, Vol.118 (2)

2021

Volltextzugriff (PDF)

High-quality AlN film grown on a nanosized concave–convex surface sapphire substrate by metalorganic vapor phase epitaxy

Applied physics letters, 2017-10, Vol.111 (16)

2017

Volltextzugriff (PDF)

Ultraviolet-B band lasers fabricated on highly relaxed thick Al0.55Ga0.45N films grown on various types of AlN wafers

Japanese Journal of Applied Physics, 2019-06, Vol.58 (SC), p.SC1052

2019

Volltextzugriff (PDF)

Theoretical investigation of nitride nanowire‐based quantum‐shell lasers

Physica status solidi. A, Applications and materials science, 2017-08, Vol.214 (8), p.1600867-n/a

2017

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Effect of AlGaN undershell on the cathodoluminescence properties of coaxial GaInN/GaN multiple-quantum-shells nanowires

Nanoscale, 2019-10, Vol.11 (4), p.18746-18757

2019

Volltextzugriff (PDF)

Reduction of dislocation density in Al0.6Ga0.4N film grown on sapphire substrates using annealed sputtered AlN templates and its effect on UV-B laser diodes

Journal of crystal growth, 2021-12, Vol.575, p.126325, Article 126325

2021

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Effects of Mg and Si doping in the guide layers of AlGaN-based ultraviolet-B band lasers

Journal of crystal growth, 2020-04, Vol.535, p.125537, Article 125537

2020

Volltextzugriff (PDF)

Growth of High‐Quality AlN and AlGaN Films on Sputtered AlN/Sapphire Templates via High‐Temperature Annealing

physica status solidi (b), 2018-05, Vol.255 (5), p.n/a

2018

Volltextzugriff (PDF)

Crystal growth and conductivity control of group III nitride semiconductors and their application to short wavelength light emitters

Japanese Journal of Applied Physics, 1997-09, Vol.36 (9A), p.5393-5408

1997

Volltextzugriff (PDF)

In-situ curvature measurements of AlInN/GaN distributed Bragg reflectors during growths containing substrate temperature ramping steps

Journal of crystal growth, 2020-02, Vol.531, p.125357, Article 125357

2020

Volltextzugriff (PDF)

Morphology Control and Crystalline Quality of p‑Type GaN Shells Grown on Coaxial GaInN/GaN Multiple Quantum Shell Nanowires

ACS applied materials & interfaces, 2021-11, Vol.13 (45), p.54486-54496

2021

Volltextzugriff (PDF)

Analysis of Spontaneous Subpeak Emission from the Guide Layers of the Ultraviolet‐B Laser Diode Structure Containing Composition‐Graded p‐AlGaN Cladding Layers

Physica status solidi. A, Applications and materials science, 2020-07, Vol.217 (14), p.n/a

2020

Volltextzugriff (PDF)

Origin of defect-insensitive emission probability in In-containing (Al,In,Ga)N alloy semiconductors

Nature materials, 2006-10, Vol.5 (10), p.810-816

2006

Volltextzugriff (PDF)

Thermodynamic analysis of GaInN-based light-emitting diodes operated by quasi-resonant optical excitation

Journal of applied physics, 2020-09, Vol.128 (12)

2020

Volltextzugriff (PDF)

The dependence of AlN molar fraction of AlGaN in wet etching by using tetramethylammonium hydroxide aqueous solution

Japanese Journal of Applied Physics, 2019-06, Vol.58 (SC), p.SCCC30

2019

Volltextzugriff (PDF)

Identifying the cause of thermal droop in GaInN-based LEDs by carrier- and thermo-dynamics analysis

Scientific reports, 2020-10, Vol.10 (1), p.17433-17433, Article 17433

2020

Volltextzugriff (PDF)

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Blue Light: A Fascinating Journey (Nobel Lecture)

GaN-Based p-n Junction Blue-Light-Emitting Devices

Key inventions in the history of nitride-based blue LED and LD

GaN-based tunnel junctions and optoelectronic devices grown by metal-organic vapor-phase epitaxy

Nobel Lecture: Fascinated journeys into blue light

Breakthroughs in Improving Crystal Quality of GaN and Invention of the p–n Junction Blue-Light-Emitting Diode

High-performance solar-blind Al0.6Ga0.4N/Al0.5Ga0.5N MSM type photodetector

Color-tunable emission in coaxial GaInN/GaN multiple quantum shells grown on three-dimensional nanostructures

Light confinement and high current density in UVB laser diode structure using Al composition-graded p-AlGaN cladding layer

n-type GaN surface etched green light-emitting diode to reduce non-radiative recombination centers

High-quality AlN film grown on a nanosized concave–convex surface sapphire substrate by metalorganic vapor phase epitaxy

Ultraviolet-B band lasers fabricated on highly relaxed thick Al0.55Ga0.45N films grown on various types of AlN wafers

Theoretical investigation of nitride nanowire‐based quantum‐shell lasers

Effect of AlGaN undershell on the cathodoluminescence properties of coaxial GaInN/GaN multiple-quantum-shells nanowires

Reduction of dislocation density in Al0.6Ga0.4N film grown on sapphire substrates using annealed sputtered AlN templates and its effect on UV-B laser diodes

Effects of Mg and Si doping in the guide layers of AlGaN-based ultraviolet-B band lasers

Growth of High‐Quality AlN and AlGaN Films on Sputtered AlN/Sapphire Templates via High‐Temperature Annealing

Crystal growth and conductivity control of group III nitride semiconductors and their application to short wavelength light emitters

In-situ curvature measurements of AlInN/GaN distributed Bragg reflectors during growths containing substrate temperature ramping steps

Morphology Control and Crystalline Quality of p‑Type GaN Shells Grown on Coaxial GaInN/GaN Multiple Quantum Shell Nanowires

Analysis of Spontaneous Subpeak Emission from the Guide Layers of the Ultraviolet‐B Laser Diode Structure Containing Composition‐Graded p‐AlGaN Cladding Layers

Origin of defect-insensitive emission probability in In-containing (Al,In,Ga)N alloy semiconductors

Thermodynamic analysis of GaInN-based light-emitting diodes operated by quasi-resonant optical excitation

The dependence of AlN molar fraction of AlGaN in wet etching by using tetramethylammonium hydroxide aqueous solution

Identifying the cause of thermal droop in GaInN-based LEDs by carrier- and thermo-dynamics analysis

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