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Act of phosphorus on cell hydraulic state, K+ use efficiency and induction of positive correlations between yield and vegetative traits in chickpea

Acta agriculturae Scandinavica. Section B, Soil and plant science, 2022-12, Vol.72 (1), p.325-332

2022

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Wet etching and chemical polishing of InAs/GaSb superlattice photodiodes

Semiconductor science and technology, 2009-06, Vol.24 (6), p.065010-065010 (6)

2009

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Interactive effects of salinity and two phosphorus fertilizers on growth and grain yield of Cicer arietinum L

Acta agriculturae Scandinavica. Section B, Soil and plant science, 2017-04, Vol.67 (3), p.208-216

2017

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ITO/p+nc-Si:H contact barrier effects on n-i-p′-p silicon solar cell performances

Materials science & engineering. B, Solid-state materials for advanced technology, 2013-04, Vol.178 (7), p.438-442

2013

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Enhancing of symbiotic efficiency and salinity tolerance of chickpea by phosphorus supply

Acta agriculturae Scandinavica. Section B, Soil and plant science, 2018-08, Vol.68 (6), p.534-540

2018

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The benefit of using p-a-SiOxCy:H as double window layers in hydrogenated amorphous silicon solar cells: Correlation of simulation and experiment

Optik (Stuttgart), 2021-07, Vol.238, p.166749, Article 166749

2021

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Analysis of the GaSb-p+/GaSb-p/GaSb-n+/GaSb-n structure performances at room temperature, for thermo-photovoltaic applications

Optik (Stuttgart), 2018-12, Vol.175, p.138-147

2018

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Energy band diagram and energy band offsets of Ga0.6Al0.4As0.034Sb0.966(p)/Ga0.6Al0.4As0.034Sb0.966(n)/InAs0.9Sb0.1 double interface determined by capacitance-voltage measurements

Materials science in semiconductor processing, 2017-08, Vol.66, p.50-55

2017

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Unambiguous determination of carrier concentration and mobility for InAs/GaSb superlattice photodiode optimization

Journal of applied physics, 2009-08, Vol.106 (3)

2009

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A Novel Analytical Approach to the Solar Cell Junction Physical Parameters Identiﬁcation

Journal of Nano- and Electronic Physics, 2023, Vol.15 (6), p.6016-6016-5

2023

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Electrical properties of short period InAs/GaSb superlattice

Physica status solidi. C, 2007-04, Vol.4 (4), p.1494-1498

2007

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Effect of incorporating p-type hydrogenated nanocrystalline silicon buffer layer on amorphous silicon n–i–p solar cell performances

Thin solid films, 2012-12, Vol.525, p.167-171

2012

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Experimental Method to Quantify the Leakage Currents of Solar Cells from Current Density-Voltage Characteristics

Journal of Nano- and Electronic Physics, 2021, Vol.13 (5), p.5019-5019-4

2021

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Numerical simulation of barrier height effect on output parameters, for a a-Si:H/nc-Si:H based solar cell

EPJ Web of conferences, 2013, Vol.44, p.3005-03005

2013

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Extraction of Diode’s Electrical Parameters under Forward and Room Temperature Conditions in an InAsSb Based Device

Journal of Nano- and Electronic Physics, 2019, Vol.11 (4), p.4030-4030-6

2019

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Temperature dependence performances of InAs/GaSb superlattice photodiode

Infrared physics & technology, 2011-05, Vol.54 (3), p.258-262

2011

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Carrier Concentration Control of GaSb/GaInAsSb System

AIP conference proceedings, 2007, Vol.890 (1), p.115-126

2007

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Current-Voltage Characteristic and Schottky Barrier Height of the GaAlAsSb(p)/GaSb(n+) Heterostructure

Physica status solidi. A, Applied research, 2001-02, Vol.183 (2), p.345-351

2001

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Presentation

EPJ Web of conferences, 2013, Vol.44, p.1

2013

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Erratum to: First-principle calculations of the electronic structure and magnetism in antiferromagnetic full Heusler compounds Ru 2 CrZ (Ge, Sn, Si)

EPJ Web of conferences, 2013, Vol.44, p.4008

2013

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Full potential calculations and atom in molecule analysis of the bonding properties of perovskites Borides XRh 3 B (X=Dy, Ho, Er)

EPJ Web of conferences, 2013, Vol.44, p.3002

2013

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Characterization of midwave infrared InAs/GaSb superlattice photodiode

Journal of applied physics, 2009-07, Vol.106 (2), p.024501-024501-5

2009

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Slow dynamics of the contact process on complex networks

EPJ Web of conferences, 2013, Vol.44, p.4005-04005

2013

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FP-LMTO investigation of the structural, electronic and agneticproperties of Heusler compounds Ru2CrZ (Ge, Sn, Si)

EPJ Web of conferences, 2013, Vol.44, p.4002-04002

2013

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Evidence of a characteristic ignition length of a flame

EPJ Web of conferences, 2013, Vol.44, p.1002-01002

2013

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Act of phosphorus on cell hydraulic state, K+ use efficiency and induction of positive correlations between yield and vegetative traits in chickpea

Wet etching and chemical polishing of InAs/GaSb superlattice photodiodes

Interactive effects of salinity and two phosphorus fertilizers on growth and grain yield of Cicer arietinum L

ITO/p+nc-Si:H contact barrier effects on n-i-p′-p silicon solar cell performances

Enhancing of symbiotic efficiency and salinity tolerance of chickpea by phosphorus supply

The benefit of using p-a-SiOxCy:H as double window layers in hydrogenated amorphous silicon solar cells: Correlation of simulation and experiment

Analysis of the GaSb-p+/GaSb-p/GaSb-n+/GaSb-n structure performances at room temperature, for thermo-photovoltaic applications

Energy band diagram and energy band offsets of Ga0.6Al0.4As0.034Sb0.966(p)/Ga0.6Al0.4As0.034Sb0.966(n)/InAs0.9Sb0.1 double interface determined by capacitance-voltage measurements

Unambiguous determination of carrier concentration and mobility for InAs/GaSb superlattice photodiode optimization

A Novel Analytical Approach to the Solar Cell Junction Physical Parameters Identiﬁcation

Electrical properties of short period InAs/GaSb superlattice

Effect of incorporating p-type hydrogenated nanocrystalline silicon buffer layer on amorphous silicon n–i–p solar cell performances

Experimental Method to Quantify the Leakage Currents of Solar Cells from Current Density-Voltage Characteristics

Numerical simulation of barrier height effect on output parameters, for a a-Si:H/nc-Si:H based solar cell

Extraction of Diode’s Electrical Parameters under Forward and Room Temperature Conditions in an InAsSb Based Device

Temperature dependence performances of InAs/GaSb superlattice photodiode

Carrier Concentration Control of GaSb/GaInAsSb System

Current-Voltage Characteristic and Schottky Barrier Height of the GaAlAsSb(p)/GaSb(n+) Heterostructure

Presentation

Erratum to: First-principle calculations of the electronic structure and magnetism in antiferromagnetic full Heusler compounds Ru 2 CrZ (Ge, Sn, Si)

Full potential calculations and atom in molecule analysis of the bonding properties of perovskites Borides XRh 3 B (X=Dy, Ho, Er)

Characterization of midwave infrared InAs/GaSb superlattice photodiode

Slow dynamics of the contact process on complex networks

FP-LMTO investigation of the structural, electronic and agneticproperties of Heusler compounds Ru2CrZ (Ge, Sn, Si)

Evidence of a characteristic ignition length of a flame

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