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Phase evolution in boron nitride thin films

Journal of materials research, 1993-06, Vol.8 (6), p.1213-1216

1993

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Growth and characterization of cubic boron nitride thin films

Journal of vacuum science & technology. A, Vacuum, surfaces, and films, 1994-11, Vol.12 (6), p.3074-3081

1994

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Evaluating the effect of oxygen content in BN interfacial coatings on the stability of SiC/BN/SiC composites

Composites. Part A, Applied science and manufacturing, 1999-01, Vol.30 (4), p.463-470

1999

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Growth of AlN, GaN and AlxGa1-xN thin films on vicinal and on-axis 6H-SiC(0001) substrates

Journal of the European Ceramic Society, 1997, Vol.17 (15-16), p.1775-1779

1997

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Growth of SiC and III–V nitride thin films via gas-source molecular beam epitaxy and their characterization

Journal of crystal growth, 1996-07, Vol.164 (1), p.132-142

1996

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Layer-by-layer epitaxial growth of GaN at low temperatures

Thin solid films, 1993-03, Vol.225 (1), p.244-249

1993

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Deposition and characterization of boron nitride thin films

Diamond and related materials, 1994-04, Vol.3 (4), p.332-336

1994

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Surface studies of model supported catalysts: NO adsorption on Rh/CeO2(001)

Journal of vacuum science & technology. A, Vacuum, surfaces, and films, 1997-05, Vol.15 (3), p.1647-1652

1997

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Gas-source molecular beam epitaxy of III–V nitrides

Journal of crystal growth, 1997-06, Vol.178 (1), p.87-101

1997

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Kinetics and mechanisms of high-temperature creep in polycrystalline aluminum nitride

Journal of materials research, 1993-05, Vol.8 (5), p.1101-1108

1993

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Deposition of III-N thin films by molecular beam epitaxy

Microelectronics, 1994-11, Vol.25 (8), p.661-674

1994

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GaN thin films deposited via organometallic vapor phase epitaxy on α(6H)–SiC(0001) using high-temperature monocrystalline AlN buffer layers

Applied physics letters, 1995-07, Vol.67 (3), p.401-403

1995

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Issues and Examples Regarding Growth of AlN, GaN and AlxGa1−xN Thin Films via OMVPE and Gas Source MBE

MRS proceedings, 1995, Vol.395

1995

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Initial Stages of Growth of Thin Films of III-V Nitrides and Silicon Carbide Polytypes by Molecular Beam Epitaxy

MRS proceedings, 1994, Vol.339, Article 351

1994

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Undoped and doped GaN thin films deposited on high-temperature monocrystalline AlN buffer layers on vicinal and on-axis α(6H)–SiC(0001) substrates via organometallic vapor phase epitaxy

Journal of materials research, 1996-04, Vol.11 (4), p.1011-1018

1996

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Evaluating the effect of oxygen content in BN interfacial coatings on the stability of SiC/BN/SiC composites

Composites. Part A, Applied science and manufacturing, 1997-10, Vol.30A (4), p.463-470

1997

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An Ex-Situ Reactor with Anaerobic Specimen Transfer Capabilities for TEM Studies of Reactive (Catalyst) Specimens

Microscopy and microanalysis, 1997-08, Vol.3 (S2), p.595-596

1997

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Gas-source molecular beam epitaxy of III-V nitrides: III-nitrides

Journal of crystal growth, 1997, Vol.178 (1-2), p.87-101

1997

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UNDOPED AND DOPED GaN THIN FILMS DEPOSITED ON HIGH-TEMPERATURE

Journal of materials research, 1996-01, Vol.11 (4), p.1011-1018

1996

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Growth via Mocvd and Characterization Of GaN and AlxGa1−xN(0001) Alloys for Optoelectronic and Microelectronic Device Applications

MRS proceedings, 1995, Vol.415

1995

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Growth via Mocvd and Characterization Of GaN and Al x Ga 1−x N(0001) Alloys for Optoelectronic and Microelectronic Device Applications

MRS proceedings, 1995, Vol.415, Article 3

1995

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Issues and Examples Regarding Growth of AlN, GaN and Al x Ga 1−x N Thin Films via OMVPE and Gas Source MBE

MRS proceedings, 1995, Vol.395, Article 3

1995

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The Stability of BN Interfacial Coatings in CFCC Systems During Oxidation and Exposure to Moisture

Microscopy and microanalysis, 1997-08, Vol.3 (S2), p.729-730

1997

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Growth of AlN and GaN thin films via OMVPE and gas source MBE and their characterization

Solid-state electronics, 1997-02, Vol.41 (2), p.129-134

1997

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Recent advances in the growth, doping and characterization of III–V nitride thin films

Advances in Solid State Physics 35, 2007, p.1-24

2007

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Phase evolution in boron nitride thin films

Growth and characterization of cubic boron nitride thin films

Evaluating the effect of oxygen content in BN interfacial coatings on the stability of SiC/BN/SiC composites

Growth of AlN, GaN and AlxGa1-xN thin films on vicinal and on-axis 6H-SiC(0001) substrates

Growth of SiC and III–V nitride thin films via gas-source molecular beam epitaxy and their characterization

Layer-by-layer epitaxial growth of GaN at low temperatures

Deposition and characterization of boron nitride thin films

Surface studies of model supported catalysts: NO adsorption on Rh/CeO2(001)

Gas-source molecular beam epitaxy of III–V nitrides

Kinetics and mechanisms of high-temperature creep in polycrystalline aluminum nitride

Deposition of III-N thin films by molecular beam epitaxy

GaN thin films deposited via organometallic vapor phase epitaxy on α(6H)–SiC(0001) using high-temperature monocrystalline AlN buffer layers

Issues and Examples Regarding Growth of AlN, GaN and AlxGa1−xN Thin Films via OMVPE and Gas Source MBE

Initial Stages of Growth of Thin Films of III-V Nitrides and Silicon Carbide Polytypes by Molecular Beam Epitaxy

Undoped and doped GaN thin films deposited on high-temperature monocrystalline AlN buffer layers on vicinal and on-axis α(6H)–SiC(0001) substrates via organometallic vapor phase epitaxy

Evaluating the effect of oxygen content in BN interfacial coatings on the stability of SiC/BN/SiC composites

An Ex-Situ Reactor with Anaerobic Specimen Transfer Capabilities for TEM Studies of Reactive (Catalyst) Specimens

Gas-source molecular beam epitaxy of III-V nitrides: III-nitrides

UNDOPED AND DOPED GaN THIN FILMS DEPOSITED ON HIGH-TEMPERATURE

Growth via Mocvd and Characterization Of GaN and AlxGa1−xN(0001) Alloys for Optoelectronic and Microelectronic Device Applications

Growth via Mocvd and Characterization Of GaN and Al x Ga 1−x N(0001) Alloys for Optoelectronic and Microelectronic Device Applications

Issues and Examples Regarding Growth of AlN, GaN and Al x Ga 1−x N Thin Films via OMVPE and Gas Source MBE

The Stability of BN Interfacial Coatings in CFCC Systems During Oxidation and Exposure to Moisture

Growth of AlN and GaN thin films via OMVPE and gas source MBE and their characterization

Recent advances in the growth, doping and characterization of III–V nitride thin films

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