UB Paderborn / Katalog / Suche / in CDI

Sortiert nach

Einfacher Volltextzugriff von (fast) überall

Installieren Sie die LibKey Nomad-Browsererweiterung und erhalten Sie von vielen Webseiten einfachen Zugriff auf lizenzierte Volltexte oder Open Access Publikationen. Mehr erfahren...

Electron effective mass and nonparabolicity in InGaAs/InAlAs quantum wells lattice-matched to InP

Physica. E, Low-dimensional systems & nanostructures, 2001-10, Vol.11 (2), p.219-223

2001

Volltextzugriff (PDF)

Dislocation-free and lattice-matched Si/GaP1−xNx/Si structure for photo-electronic integrated systems

Applied physics letters, 2001-12, Vol.79 (25), p.4151-4153

2001

Volltextzugriff (PDF)

Nonparabolic effective masses of conduction subbands in InGaAs/InAlAs quantum wells in normal and parallel directions

Physica. B, Condensed matter, 2001-04, Vol.298 (1-4), p.221-225

2001

Volltextzugriff (PDF)

GaN epitaxial growth on neodium gallate substrates

Solid-state electronics, 1997-02, Vol.41 (2), p.263-266

1997

Volltextzugriff (PDF)

Temperature distribution along the striped active region in high-power GaAlAs visible lasers

Journal of applied physics, 1985-08, Vol.58 (3), p.1124-1128

1985

Volltextzugriff (PDF)

Variable‐angle ultraviolet total‐internal‐reflection fluorescence spectroscopy using a white excitation light source

Review of scientific instruments, 1995-06, Vol.66 (6), p.3520-3526

1995

Volltextzugriff (PDF)

Control of N Content of GaPN Grown by Molecular Beam Epitaxy and Growth of GaPN Lattice Matched to Si(100) Substrate

Japanese Journal of Applied Physics, 2002, Vol.41 (Part 1, No. 2A), p.528-532

2002

Volltextzugriff (PDF)

Channeled-substrate planar structure (AlGa)As injection lasers

Applied physics letters, 1977-06, Vol.30 (12), p.649-651

1977

Volltextzugriff (PDF)

Fabrication and characterization of narrow stripe InGaAsP/InP buried heterostructure lasers

Journal of applied physics, 1980-08, Vol.51 (8), p.4539-4540

1980

Volltextzugriff (PDF)

HARDENING EFFECT OF GaP1-xNx AND GaAs1-XNX ALLOYS BY ADDING NITROGEN ATOMS

Japanese Journal of Applied Physics, Part 1, 2002-12, Vol.41 (12), p.7301-7306

2002

Volltextzugriff (PDF)

cw operation of distributed-feedback GaAs-GaAlAs diode lasers at temperatures up to 300 K

Applied physics letters, 1975-10, Vol.27 (7), p.403-405

1975

Volltextzugriff (PDF)

Dual-in-line laser diode module for fiber-optic transmission up to 4 Gbit/s

Journal of lightwave technology, 1987, Vol.5 (10), p.1403-1411

1987

Volltextzugriff (PDF)

Stabilization of semiconductor laser outputs by a mirror close to a laser facet

Applied physics letters, 1978-12, Vol.33 (12), p.990-992

1978

Volltextzugriff (PDF)

Highly efficient (GaAl)As buried-heterostructure lasers with buried optical guide

Applied physics letters, 1979-10, Vol.35 (7), p.513-516

1979

Volltextzugriff (PDF)

Effects of lateral mode and carrier density profile on dynamic behaviors of semiconductor lasers

IEEE journal of quantum electronics, 1978-08, Vol.14 (8), p.625-631

1978

Volltextzugriff (PDF)

Direct observation of the saturation behavior of spontaneous emission in semiconductor lasers

Applied physics letters, 1978-03, Vol.32 (5), p.322-323

1978

Volltextzugriff (PDF)

Frequency multiplexing light source with monolithically integrated distributed-feedback diode lasers

Applied physics letters, 1976-10, Vol.29 (8), p.506-508

1976

Volltextzugriff (PDF)

InGaAsP/InP distributed-feedback injection lasers fabricated by one-step liquid phase epitaxy

Applied physics letters, 1979-09, Vol.35 (6), p.441-443

1979

Volltextzugriff (PDF)

ESR Study of γ-Irradiated Sodium Thiosulfate Single Crystals

Journal of the Physical Society of Japan, 1969-01, Vol.26 (4), p.939-947

Aiki, Kunio

1969

Volltextzugriff (PDF)

A frequency-multiplexing light source with monolithically integrated distributed-feedback diode lasers

IEEE journal of quantum electronics, 1977-04, Vol.13 (4), p.220-223

1977

Volltextzugriff (PDF)

Liquid phase epitaxial growth of Ga1−xAlxAs on channeled substrates

Journal of crystal growth, 1978-01, Vol.45, p.252-256

1978

Volltextzugriff (PDF)

The effect of sputtered-SiO 2 facet coating films on the suppression of self-sustained pulsations in the output of (GaAl)As double-heterostructure lasers during CW operation

IEEE journal of quantum electronics, 1980-07, Vol.16 (7), p.728-734

1980

Volltextzugriff (PDF)

GaAs-GaAlAs distributed-feedback diode lasers with separate optical and carrier confinement

Applied physics letters, 1975-08, Vol.27 (3), p.145-146

1975

Volltextzugriff (PDF)

Lasing characteristics of distributed-feedback GaAs-GaAlAs diode lasers with separate optical and carrier confinement

IEEE journal of quantum electronics, 1976-10, Vol.12 (10), p.597-603

1976

Volltextzugriff (PDF)

Laser diode uses for optical disks

IEEE journal of quantum electronics, 1981-12, Vol.17 (12), p.2460-2460

1981

Volltextzugriff (PDF)

1 – 25 von 98

Suche als RSS-Feed

Suchergebnisse filtern

Filter anzeigen

Nur zeigen

Geprüft (Peer-Review)
(84)
Mit Volltextzugriff
(85)

Publikationsform

Artikel
(91)
Tagungsberichte
(7)

Sprache

Erscheinungsjahr

n.n

Thema

Science & Technology
(59)
Physical Sciences
(42)
Physics
(36)
Physics, Applied
(27)
Engineering
(17)
Technology
(15)
Life Sciences & Biomedicine
(14)
Exact Sciences And Technology
(13)
Lasers
(11)
Semiconductor Lasers
(11)
Engineering, Electrical & Electronic
(10)
Gallium Arsenides
(10)
Humans
(9)
Optics
(9)
Arsenic Compounds
(8)
Arsenides
(8)
Gallium Compounds
(8)
Pnictides
(8)
Semiconductor Devices
(8)
Aluminium Arsenides
(7)

15 weitere anzeigen...

Weniger anzeigen...

Menü

Weitere Dienste

Einstellungen

Electron effective mass and nonparabolicity in InGaAs/InAlAs quantum wells lattice-matched to InP

Dislocation-free and lattice-matched Si/GaP1−xNx/Si structure for photo-electronic integrated systems

Nonparabolic effective masses of conduction subbands in InGaAs/InAlAs quantum wells in normal and parallel directions

GaN epitaxial growth on neodium gallate substrates

Temperature distribution along the striped active region in high-power GaAlAs visible lasers

Variable‐angle ultraviolet total‐internal‐reflection fluorescence spectroscopy using a white excitation light source

Control of N Content of GaPN Grown by Molecular Beam Epitaxy and Growth of GaPN Lattice Matched to Si(100) Substrate

Channeled-substrate planar structure (AlGa)As injection lasers

Fabrication and characterization of narrow stripe InGaAsP/InP buried heterostructure lasers

HARDENING EFFECT OF GaP1-xNx AND GaAs1-XNX ALLOYS BY ADDING NITROGEN ATOMS

cw operation of distributed-feedback GaAs-GaAlAs diode lasers at temperatures up to 300 K

Dual-in-line laser diode module for fiber-optic transmission up to 4 Gbit/s

Stabilization of semiconductor laser outputs by a mirror close to a laser facet

Highly efficient (GaAl)As buried-heterostructure lasers with buried optical guide

Effects of lateral mode and carrier density profile on dynamic behaviors of semiconductor lasers

Direct observation of the saturation behavior of spontaneous emission in semiconductor lasers

Frequency multiplexing light source with monolithically integrated distributed-feedback diode lasers

InGaAsP/InP distributed-feedback injection lasers fabricated by one-step liquid phase epitaxy

ESR Study of γ-Irradiated Sodium Thiosulfate Single Crystals

A frequency-multiplexing light source with monolithically integrated distributed-feedback diode lasers

Liquid phase epitaxial growth of Ga1−xAlxAs on channeled substrates

The effect of sputtered-SiO 2 facet coating films on the suppression of self-sustained pulsations in the output of (GaAl)As double-heterostructure lasers during CW operation

GaAs-GaAlAs distributed-feedback diode lasers with separate optical and carrier confinement

Lasing characteristics of distributed-feedback GaAs-GaAlAs diode lasers with separate optical and carrier confinement

Laser diode uses for optical disks

Suchergebnisse filtern