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Long wavelength emitting GaInN quantum wells on metamorphic GaInN buffer layers with enlarged in-plane lattice parameter

Applied physics letters, 2014-09, Vol.105 (11)

2014

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Comparative analysis of quantum cascade laser modeling based on density matrices and non-equilibrium Green's functions

Applied physics letters, 2014-09, Vol.105 (10)

2014

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Broadly tunable hetero-cascading quantum cascade lasers: Design, growth, and external cavity operation

Journal of crystal growth, 2019-05, Vol.513, p.1-5

2019

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Charge-layer design considerations in SAGCM InGaAs/InAlAs avalanche photodiodes

Physica status solidi. A, Applications and materials science, 2016-04, Vol.213 (4), p.925-929

2016

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GaN-Based Submicrometer HEMTs With Lattice-Matched InAlGaN Barrier Grown by MBE

IEEE electron device letters, 2010-07, Vol.31 (7), p.671-673

2010

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GaSb-based 2.0 μm SDL with 17 W output power at 20°C

Electronics letters, 2016-10, Vol.52 (21), p.1794-1795

2016

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N-type conductivity and properties of carbon-doped InN(0001) films grown by molecular beam epitaxy

Journal of applied physics, 2013-01, Vol.113 (3)

2013

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Compositional variation of nearly lattice-matched InAlGaN alloys for high electron mobility transistors

Applied physics letters, 2010-06, Vol.96 (25)

2010

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Molecular beam epitaxial growth of metamorphic AlInSb/GaInSb high-electron-mobility-transistor structures on GaAs substrates for low power and high frequency applications

Journal of applied physics, 2011-02, Vol.109 (3)

2011

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Dispersion of effective refractive indices of mid-infrared quantum cascade lasers

Journal of applied physics, 2012-11, Vol.112 (10)

2012

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Structural and compositional homogeneity of InAlN epitaxial layers nearly lattice-matched to GaN

Acta materialia, 2010-07, Vol.58 (12), p.4120-4125

2010

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Nonuniformity of electron density in In-rich InGaN films deduced from electrolyte capacitance-voltage profiling

Applied physics letters, 2010-02, Vol.96 (8)

2010

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Time-resolved spectral characteristics of external-cavity quantum cascade lasers and their application to stand-off detection of explosives

Applied physics. B, Lasers and optics, 2010-08, Vol.100 (2), p.253-260

2010

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14xx-nm high brightness tapered diode lasers grown by solid-source MBE

IEEE photonics technology letters, 2006-03, Vol.18 (5), p.655-657

2006

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Electron and hole accumulation in InN/InGaN heterostructures

Physica status solidi. C, 2011-02, Vol.8 (2), p.485-487

2011

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Solid source MBE growth on InP-based DHBTs for high-speed data communication

Journal of crystal growth, 2007-04, Vol.301, p.1001-1004

2007

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InP DHBT-Based Monolithically Integrated CDR/DEMUX IC Operating at 80 Gbit/s

IEEE journal of solid-state circuits, 2006-10, Vol.41 (10), p.2215-2223

2006

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Plasma assisted molecular beam epitaxy of AlGaN/GaN high electron mobility transistors

Physica status solidi. C, 2008-05, Vol.5 (6), p.1902-1905

2008

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Growth and characterization of InAlN layers nearly lattice-matched to GaN

Physica status solidi. C, 2011-07, Vol.8 (7-8), p.2500-2502

2011

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Experimental investigation of the charge-layer doping level in InGaAs/InAlAs avalanche photodiodes

Infrared physics & technology, 2015-07, Vol.71, p.298-302

2015

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Buried-Heterostructure Quantum Cascade Lasers Fabricated Using a Sacrificial Layer and a Two-Step Regrowth Process

ECS transactions, 2018, Vol.86 (9), p.23-29

2018

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GaSb-based 2.0 [mu]m SDL with 17 W output power at 20[degrees]C

Electronics letters, 2016-10, Vol.52 (21), p.1794-1795

2016

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Growth and characterization of Pb(Zr, Ti)O3 thin films and ferroelectric polarization charging of YBa2Cu3O7 thin films

Thin solid films, 2001-03, Vol.384 (1), p.1-14

2001

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Fundamental low phase noise InP-based DHBT VCO operating up to 89 GHz

Electronics letters, 2005-08, Vol.41 (17), p.961-963

2005

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InGaAs HEMT MMIC Technology on Silicon Substrate with Backside Field-Plate

2020 50th European Microwave Conference (EuMC), 2021, p.187-190

2021

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Long wavelength emitting GaInN quantum wells on metamorphic GaInN buffer layers with enlarged in-plane lattice parameter

Comparative analysis of quantum cascade laser modeling based on density matrices and non-equilibrium Green's functions

Broadly tunable hetero-cascading quantum cascade lasers: Design, growth, and external cavity operation

Charge-layer design considerations in SAGCM InGaAs/InAlAs avalanche photodiodes

GaN-Based Submicrometer HEMTs With Lattice-Matched InAlGaN Barrier Grown by MBE

GaSb-based 2.0 μm SDL with 17 W output power at 20°C

N-type conductivity and properties of carbon-doped InN(0001) films grown by molecular beam epitaxy

Compositional variation of nearly lattice-matched InAlGaN alloys for high electron mobility transistors

Molecular beam epitaxial growth of metamorphic AlInSb/GaInSb high-electron-mobility-transistor structures on GaAs substrates for low power and high frequency applications

Dispersion of effective refractive indices of mid-infrared quantum cascade lasers

Structural and compositional homogeneity of InAlN epitaxial layers nearly lattice-matched to GaN

Nonuniformity of electron density in In-rich InGaN films deduced from electrolyte capacitance-voltage profiling

Time-resolved spectral characteristics of external-cavity quantum cascade lasers and their application to stand-off detection of explosives

14xx-nm high brightness tapered diode lasers grown by solid-source MBE

Electron and hole accumulation in InN/InGaN heterostructures

Solid source MBE growth on InP-based DHBTs for high-speed data communication

InP DHBT-Based Monolithically Integrated CDR/DEMUX IC Operating at 80 Gbit/s

Plasma assisted molecular beam epitaxy of AlGaN/GaN high electron mobility transistors

Growth and characterization of InAlN layers nearly lattice-matched to GaN

Experimental investigation of the charge-layer doping level in InGaAs/InAlAs avalanche photodiodes

Buried-Heterostructure Quantum Cascade Lasers Fabricated Using a Sacrificial Layer and a Two-Step Regrowth Process

GaSb-based 2.0 [mu]m SDL with 17 W output power at 20[degrees]C

Growth and characterization of Pb(Zr, Ti)O3 thin films and ferroelectric polarization charging of YBa2Cu3O7 thin films

Fundamental low phase noise InP-based DHBT VCO operating up to 89 GHz

InGaAs HEMT MMIC Technology on Silicon Substrate with Backside Field-Plate

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