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Size of dislocation patterns induced by Vickers indentation in hydride vapor-phase epitaxy GaN

Journal of applied physics, 2022-06, Vol.131 (22)

2022

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Analysis of the correlation between in-situ and ex-situ observations of the initial stages of growth of heteroepitaxial diamond on Ir(001)/MgO(001)

Journal of crystal growth, 2022-10, Vol.595, p.126807, Article 126807

2022

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Analysis of mechanically induced subsurface damage and its removal by chemical mechanical polishing for gallium nitride substrate

Precision engineering, 2021-01, Vol.67, p.350-358

2021

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Linear dependence of dislocation pattern size on the imprint width and scratch width on (0001) GaN

Journal of physics. D, Applied physics, 2022-12, Vol.55 (48), p.485304

2022

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Ultraprecision CMP for sapphire, GaN, and SiC for advanced optoelectronics materials

Current applied physics, 2012-09, Vol.12, p.S41-S46

2012

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In-situ reflectance interferometry of heteroepitaxial diamond growth

Diamond and related materials, 2021-03, Vol.113, p.108253, Article 108253

2021

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Overgrowth of diamond layers on diamond microneedles: New concept for freestanding diamond substrate by heteroepitaxy

Diamond and related materials, 2016-06, Vol.66, p.77-82

2016

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Microneedle growth method as an innovative approach for growing freestanding single crystal diamond substrate: Detailed study on the growth scheme of continuous diamond layers on diamond microneedles

Diamond and related materials, 2017-05, Vol.75, p.34-38

2017

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Control of initial bow of sapphire substrates for III-nitride epitaxy by internally focused laser processing

Journal of crystal growth, 2012-12, Vol.361, p.135-141

2012

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難加工次世代単結晶のための次世代型CMP加工技術: プラズマ/CMP同時融合加工の実用化に向けて

精密工学会誌, 2022/06/05, Vol.88(6), pp.435-439

2022

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Growth of thick GaN layers on laser-processed sapphire substrate by hydride vapor phase epitaxy

Journal of crystal growth, 2014-10, Vol.403, p.38-42

2014

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Reduction of Bowing in GaN-on-Sapphire and GaN-on-Silicon Substrates by Stress Implantation by Internally Focused Laser Processing

Japanese Journal of Applied Physics, 2012-01, Vol.51 (1R), p.16504

2012

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Patterned Sapphire Substrates for III-Nitride Epitaxial Growth

International journal of automation technology, 2018-03, Vol.12 (2), p.179-186

2018

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Analysis of sapphire- chemical mechanical polishing using digital image processing

Mechanical Engineering Journal, 2016, Vol.3(1), pp.15-00509-15-00509

2016

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Investigation into Chemical Mechanical Polishing Mechanism of Hard-to-Process Materials Using a Commercially Available Single-Sided Polisher

International journal of automation technology, 2015-09, Vol.9 (5), p.573-579

2015

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Effect of Initial Bow of Sapphire Substrate on Substrate Curvature during InGaN Growth Stage of Light Emitting Diode Epitaxy

Japanese Journal of Applied Physics, 2012-01, Vol.51 (1R), p.12102

2012

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Analysis of Subsurface Damage Structures of Gallium Nitride Substrates Induced by Mechanical Polishing with Diamond Abrasives

physica status solidi (b), 2024-07

2024

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Analysis of external surface and internal lattice curvatures of freestanding heteroepitaxial diamond grown on an Ir (001)/MgO (001) substrate

Diamond and related materials, 2023-06, Vol.136, p.110026, Article 110026

2023

Volltextzugriff (PDF)

Reduction of Bowing in GaN-on-Sapphire and GaN-on-Silicon Substrates by Stress Implantation by Internally Focused Laser Processing

Japanese Journal of Applied Physics, 2012-01, Vol.51 (1R), p.16504

2012

Volltextzugriff (PDF)

Effects of Atmosphere and Ultraviolet Light Irradiation on Chemical Mechanical Polishing Characteristics of SiC Wafers

Japanese Journal of Applied Physics, 2012-05, Vol.51 (5), p.05EF05-05EF05-2

2012

Volltextzugriff (PDF)

High-efficiency planarization method combining mechanical polishing and atmospheric-pressure plasma etching for hard-to-machine semiconductor substrates

Mechanical Engineering Journal, 2016, Vol.3(1), pp.15-00527-15-00527

2016

Volltextzugriff (PDF)

Effect of Initial Bow of Sapphire Substrate on Substrate Curvature during InGaN Growth Stage of Light Emitting Diode Epitaxy

Japanese Journal of Applied Physics, 2012-01, Vol.51 (1R), p.12102

2012

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Physical bending of heteroepitaxial diamond grown on an Ir/MgO substrate

Diamond and related materials, 2023-08, Vol.137, p.110055, Article 110055

2023

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Effects of N-Face Finishing on Geometry of Double-Side Polished GaN Substrate

International journal of automation technology, 2014-01, Vol.8 (1), p.121-127

2014

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Effect of Groove Pattern of Chemical Mechanical Polishing Pad on Slurry Flow Behavior

Japanese Journal of Applied Physics, 2012-05, Vol.51 (5), p.05EF03-05EF03-2

2012

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Size of dislocation patterns induced by Vickers indentation in hydride vapor-phase epitaxy GaN

Analysis of the correlation between in-situ and ex-situ observations of the initial stages of growth of heteroepitaxial diamond on Ir(001)/MgO(001)

Analysis of mechanically induced subsurface damage and its removal by chemical mechanical polishing for gallium nitride substrate

Linear dependence of dislocation pattern size on the imprint width and scratch width on (0001) GaN

Ultraprecision CMP for sapphire, GaN, and SiC for advanced optoelectronics materials

In-situ reflectance interferometry of heteroepitaxial diamond growth

Overgrowth of diamond layers on diamond microneedles: New concept for freestanding diamond substrate by heteroepitaxy

Microneedle growth method as an innovative approach for growing freestanding single crystal diamond substrate: Detailed study on the growth scheme of continuous diamond layers on diamond microneedles

Control of initial bow of sapphire substrates for III-nitride epitaxy by internally focused laser processing

難加工次世代単結晶のための次世代型CMP加工技術: プラズマ/CMP同時融合加工の実用化に向けて

Growth of thick GaN layers on laser-processed sapphire substrate by hydride vapor phase epitaxy

Reduction of Bowing in GaN-on-Sapphire and GaN-on-Silicon Substrates by Stress Implantation by Internally Focused Laser Processing

Patterned Sapphire Substrates for III-Nitride Epitaxial Growth

Analysis of sapphire- chemical mechanical polishing using digital image processing

Investigation into Chemical Mechanical Polishing Mechanism of Hard-to-Process Materials Using a Commercially Available Single-Sided Polisher

Effect of Initial Bow of Sapphire Substrate on Substrate Curvature during InGaN Growth Stage of Light Emitting Diode Epitaxy

Analysis of Subsurface Damage Structures of Gallium Nitride Substrates Induced by Mechanical Polishing with Diamond Abrasives

Analysis of external surface and internal lattice curvatures of freestanding heteroepitaxial diamond grown on an Ir (001)/MgO (001) substrate

Reduction of Bowing in GaN-on-Sapphire and GaN-on-Silicon Substrates by Stress Implantation by Internally Focused Laser Processing

Effects of Atmosphere and Ultraviolet Light Irradiation on Chemical Mechanical Polishing Characteristics of SiC Wafers

High-efficiency planarization method combining mechanical polishing and atmospheric-pressure plasma etching for hard-to-machine semiconductor substrates

Effect of Initial Bow of Sapphire Substrate on Substrate Curvature during InGaN Growth Stage of Light Emitting Diode Epitaxy

Physical bending of heteroepitaxial diamond grown on an Ir/MgO substrate

Effects of N-Face Finishing on Geometry of Double-Side Polished GaN Substrate

Effect of Groove Pattern of Chemical Mechanical Polishing Pad on Slurry Flow Behavior

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