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Enhancing the electrical readout of the spin-dependent recombination current in SiC JFETs for EDMR based magnetometry using a tandem (de-)modulation technique

Scientific reports, 2024-06, Vol.14 (1), p.14283-11, Article 14283

2024

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The Paradigm Shift in Understanding the Bias Temperature Instability: From Reaction-Diffusion to Switching Oxide Traps

IEEE transactions on electron devices, 2011-11, Vol.58 (11), p.3652-3666

2011

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Interface chemistry and electrical characteristics of 4H-SiC/SiO2 after nitridation in varying atmospheres

Journal of materials chemistry. C, Materials for optical and electronic devices, 2018, Vol.6 (44), p.1279-1285

2018

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Giant amplification of spin dependent recombination at heterojunctions through a gate controlled bipolar effect

Applied physics letters, 2012-08, Vol.101 (8), p.83504

2012

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Threshold voltage peculiarities and bias temperature instabilities of SiC MOSFETs

Microelectronics and reliability, 2018-01, Vol.80, p.68-78

2018

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1200V SiC Trench-MOSFET optimized for high reliability and high performance

2016 European Conference on Silicon Carbide & Related Materials (ECSCRM), 2017-05, Vol.897, p.1-1

2017

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A nitrogen-related deep level defect in ion implanted 4H-SiC pn junctions-A spin dependent recombination study

Applied physics letters, 2012-03, Vol.100 (11), p.112113-112113-4

2012

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The Impact of Interfacial Charge Trapping on the Reproducibility of Measurements of Silicon Carbide MOSFET Device Parameters

Crystals (Basel), 2020-12, Vol.10 (12), p.1143

2020

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Impact of Nitric Oxide Post Oxidation Anneal on the Bias Temperature Instability and the On-Resistance of 4H-SiC nMOSFETs

Materials science forum, 2015-06, Vol.821-823, p.709-712

2015

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Interface Defects and Negative Bias Temperature Instabilities in 4H-SiC PMOSFETs – A Combined DCIV/SDR Study

Materials science forum, 2013-01, Vol.740-742, p.529-532

2013

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Effects of nitridation on SiC/SiO2 structures studied by hard X-ray photoelectron spectroscopy

JPhys Energy, 2020-07, Vol.2 (3)

2020

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A straightforward electrical method to determine screening capability of GOX extrinsics in arbitrary, commercially available SiC MOSFETs

2021 IEEE International Reliability Physics Symposium (IRPS), 2021, p.1-5

2021

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Preconditioned BTI on 4H-SiC: Proposal for a Nearly Delay Time-Independent Measurement Technique

IEEE transactions on electron devices, 2018-04, Vol.65 (4), p.1419-1426

2018

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NH3 and NO + NH3 Annealing of 4H-SiC Trench MOSFETs: Device Performance and Reliability

IEEE transactions on electron devices, 2019-11, Vol.66 (11), p.4692-4697, Article 4692

2019

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Robustness of SiC MOSFETs under Repetitive High Current Pulses

Materials science forum, 2023-06, Vol.1092, p.119-125

2023

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Assessing, Controlling and Understanding Parameter Variations of SiC Power MOSFETs in Switching Operation

Key engineering materials, 2023-05, Vol.947, p.69-75

2023

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NH 3 and NO + NH 3 Annealing of 4H-SiC Trench MOSFETs: Device Performance and Reliability

IEEE transactions on electron devices, 2019-11, Vol.66 (11), p.4692-4697

2019

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Investigation of threshold voltage stability of SiC MOSFETs

2018 IEEE 30th International Symposium on Power Semiconductor Devices and ICs (ISPSD), 2018, p.40-43

2018

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Detection and Cryogenic Characterization of Defects at the SiO 2 /4H-SiC Interface in Trench MOSFET

IEEE transactions on electron devices, 2019-03, Vol.66 (3), p.1213-1217

2019

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Gate Switching Instability in Silicon Carbide MOSFETs-Part II: Modeling

IEEE transactions on electron devices, 2024-07, Vol.71 (7), p.4218-4226

2024

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Detection and Cryogenic Characterization of Defects at the SiO2/4H-SiC Interface in Trench MOSFET

IEEE transactions on electron devices, 2019-03, Vol.66 (3), p.1213-1217

2019

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Influence of SiC MOSFET Gate Technologies on Imbalanced Performance in Hard Switching Parallel Operation

2024 36th International Symposium on Power Semiconductor Devices and ICs (ISPSD), 2024, p.76-79

2024

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Gate Switching Instability in Silicon Carbide MOSFETs-Part I: Experimental

IEEE transactions on electron devices, 2024-07, Vol.71 (7), p.4210-4217

2024

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On the Frequency Dependence of the Gate Switching Instability in Silicon Carbide MOSFETs

Materials science forum, 2023-06, Vol.1092, p.109-117

2023

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Cryogenic Characterization of NH3 Post Oxidation Annealed 4H-SiC Trench MOSFETs

Materials science forum, 2019-07, Vol.963, p.175-179

2019

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Enhancing the electrical readout of the spin-dependent recombination current in SiC JFETs for EDMR based magnetometry using a tandem (de-)modulation technique

The Paradigm Shift in Understanding the Bias Temperature Instability: From Reaction-Diffusion to Switching Oxide Traps

Interface chemistry and electrical characteristics of 4H-SiC/SiO2 after nitridation in varying atmospheres

Giant amplification of spin dependent recombination at heterojunctions through a gate controlled bipolar effect

Threshold voltage peculiarities and bias temperature instabilities of SiC MOSFETs

1200V SiC Trench-MOSFET optimized for high reliability and high performance

A nitrogen-related deep level defect in ion implanted 4H-SiC pn junctions-A spin dependent recombination study

The Impact of Interfacial Charge Trapping on the Reproducibility of Measurements of Silicon Carbide MOSFET Device Parameters

Impact of Nitric Oxide Post Oxidation Anneal on the Bias Temperature Instability and the On-Resistance of 4H-SiC nMOSFETs

Interface Defects and Negative Bias Temperature Instabilities in 4H-SiC PMOSFETs – A Combined DCIV/SDR Study

Effects of nitridation on SiC/SiO2 structures studied by hard X-ray photoelectron spectroscopy

A straightforward electrical method to determine screening capability of GOX extrinsics in arbitrary, commercially available SiC MOSFETs

Preconditioned BTI on 4H-SiC: Proposal for a Nearly Delay Time-Independent Measurement Technique

NH3 and NO + NH3 Annealing of 4H-SiC Trench MOSFETs: Device Performance and Reliability

Robustness of SiC MOSFETs under Repetitive High Current Pulses

Assessing, Controlling and Understanding Parameter Variations of SiC Power MOSFETs in Switching Operation

NH 3 and NO + NH 3 Annealing of 4H-SiC Trench MOSFETs: Device Performance and Reliability

Investigation of threshold voltage stability of SiC MOSFETs

Detection and Cryogenic Characterization of Defects at the SiO 2 /4H-SiC Interface in Trench MOSFET

Gate Switching Instability in Silicon Carbide MOSFETs-Part II: Modeling

Detection and Cryogenic Characterization of Defects at the SiO2/4H-SiC Interface in Trench MOSFET

Influence of SiC MOSFET Gate Technologies on Imbalanced Performance in Hard Switching Parallel Operation

Gate Switching Instability in Silicon Carbide MOSFETs-Part I: Experimental

On the Frequency Dependence of the Gate Switching Instability in Silicon Carbide MOSFETs

Cryogenic Characterization of NH3 Post Oxidation Annealed 4H-SiC Trench MOSFETs

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