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Review on SiC MOSFETs High-Voltage Device Reliability Focusing on Threshold Voltage Instability

IEEE transactions on electron devices, 2019-11, Vol.66 (11), p.4604-4616

2019

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Electrically detected magnetic resonance of carbon dangling bonds at the Si-face 4H-SiC/SiO2 interface

Journal of applied physics, 2018-04, Vol.123 (16)

2018

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Recombination centers in 4H-SiC investigated by electrically detected magnetic resonance and ab initio modeling

Journal of applied physics, 2016-05, Vol.119 (18)

2016

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Recombination defects at the 4H-SiC/SiO2 interface investigated with electrically detected magnetic resonance and ab initio calculations

Journal of applied physics, 2018-07, Vol.124 (4)

2018

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Electrically detected magnetic resonance study of defects created by hot carrier stress at the SiC/SiO2 interface of a SiC n -channel metal-oxide-semiconductor field-effect transistor

Applied physics letters, 2014-07, Vol.105 (4)

2014

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A Recombination-Enhanced-Defect-Reaction-Based Model for the Gate Switching Instability in SiC MOSFETs

2024 IEEE International Reliability Physics Symposium (IRPS), 2024, p.3B.1-1-3B.1-7

2024

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A Combined Study of p- and n-Channel MOS Devices to Investigate the Energetic Distribution of Oxide Traps After NBTI

IEEE transactions on electron devices, 2009-12, Vol.56 (12), p.3018-3026

2009

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On the temperature dependence of NBTI recovery

Microelectronics and reliability, 2008-08, Vol.48 (8), p.1178-1184

2008

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Gate-oxide reliability and failure-rate reduction of industrial SiC MOSFETs

2020 IEEE International Reliability Physics Symposium (IRPS), 2020, p.1-6

2020

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The Paradigm Shift in Understanding the Bias Temperature Instability: From Reaction-Diffusion to Switching Oxide Traps

IEEE transactions on electron devices, 2011-11, Vol.58 (11), p.3652-3666

2011

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Monitoring of parameter stability of SiC MOSFETs in real application tests

Microelectronics and reliability, 2020-11, Vol.114, p.113731, Article 113731

2020

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Impact of hydrogen on recoverable and permanent damage following negative bias temperature stress

2010 IEEE International Reliability Physics Symposium, 2010, p.1063-1068

2010

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Gate-switching-stress test: Electrical parameter stability of SiC MOSFETs in switching operation

Microelectronics and reliability, 2022-08, Vol.135, p.114575, Article 114575

2022

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Influence of high-voltage gate-oxide pulses on the BTI behavior of SiC MOSFETs

2020 IEEE International Reliability Physics Symposium (IRPS), 2020, p.1-6

2020

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A two-stage model for negative bias temperature instability

2009 IEEE International Reliability Physics Symposium, 2009, p.33-44

2009

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A new test procedure to realistically estimate end-of-life electrical parameter stability of SiC MOSFETs in switching operation

2021 IEEE International Reliability Physics Symposium (IRPS), 2021, p.1-7

2021

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Similarities and Differences of BTI in SiC and Si Power MOSFETs

2020 IEEE International Reliability Physics Symposium (IRPS), 2020, p.1-7

2020

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1200V SiC Trench-MOSFET optimized for high reliability and high performance

2016 European Conference on Silicon Carbide & Related Materials (ECSCRM), 2017-05, Vol.897, p.1-1

2017

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Theory of hyperfine active nitrogen complexes observed in 4H-SiC diodes

Journal of applied physics, 2013-09, Vol.114 (11)

2013

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First Principles Study of the Influence of the Local Steric Environment on the Incorporation and Migration of NO in a-SiO2

Materials science forum, 2019-07, Vol.963, p.194-198

2019

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Identifying Performance Limiting Defects in Silicon Carbide pn-Junctions: A Theoretical Study

Materials Science Forum, 2016-05, Vol.858, p.257-260

2016

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The 'permanent' component of NBTI: Composition and annealing

2011 International Reliability Physics Symposium, 2011, p.6A.2.1-6A.2.9

2011

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Essential oil content and composition in commercially available dill cultivars in comparison to caraway

Industrial crops and products, 2001-11, Vol.14 (3), p.229-239

2001

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A Workout in Computational Finance

1, 2013

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Charge pumping revisited - the benefits of an optimized constant base level charge pumping technique for MOS-FET analysis

2007 IEEE International Integrated Reliability Workshop Final Report, 2007, p.63-69

2007

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Review on SiC MOSFETs High-Voltage Device Reliability Focusing on Threshold Voltage Instability

Electrically detected magnetic resonance of carbon dangling bonds at the Si-face 4H-SiC/SiO2 interface

Recombination centers in 4H-SiC investigated by electrically detected magnetic resonance and ab initio modeling

Recombination defects at the 4H-SiC/SiO2 interface investigated with electrically detected magnetic resonance and ab initio calculations

Electrically detected magnetic resonance study of defects created by hot carrier stress at the SiC/SiO2 interface of a SiC n -channel metal-oxide-semiconductor field-effect transistor

A Recombination-Enhanced-Defect-Reaction-Based Model for the Gate Switching Instability in SiC MOSFETs

A Combined Study of p- and n-Channel MOS Devices to Investigate the Energetic Distribution of Oxide Traps After NBTI

On the temperature dependence of NBTI recovery

Gate-oxide reliability and failure-rate reduction of industrial SiC MOSFETs

The Paradigm Shift in Understanding the Bias Temperature Instability: From Reaction-Diffusion to Switching Oxide Traps

Monitoring of parameter stability of SiC MOSFETs in real application tests

Impact of hydrogen on recoverable and permanent damage following negative bias temperature stress

Gate-switching-stress test: Electrical parameter stability of SiC MOSFETs in switching operation

Influence of high-voltage gate-oxide pulses on the BTI behavior of SiC MOSFETs

A two-stage model for negative bias temperature instability

A new test procedure to realistically estimate end-of-life electrical parameter stability of SiC MOSFETs in switching operation

Similarities and Differences of BTI in SiC and Si Power MOSFETs

1200V SiC Trench-MOSFET optimized for high reliability and high performance

Theory of hyperfine active nitrogen complexes observed in 4H-SiC diodes

First Principles Study of the Influence of the Local Steric Environment on the Incorporation and Migration of NO in a-SiO2

Identifying Performance Limiting Defects in Silicon Carbide pn-Junctions: A Theoretical Study

The 'permanent' component of NBTI: Composition and annealing

Essential oil content and composition in commercially available dill cultivars in comparison to caraway

A Workout in Computational Finance

Charge pumping revisited - the benefits of an optimized constant base level charge pumping technique for MOS-FET analysis

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