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A study on the origin of emission of the annealed n-ZnO/p-GaN heterostructure LED

Thin solid films, 2009-07, Vol.517 (17), p.5157-5160

2009

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Optical properties of plasmons in a multiple quantum well semiconductor superlattice under electric and magnetic fields

Physica. B, Condensed matter, 2014-10, Vol.451, p.7-11

2014

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Determination of the distal fusion level in the management of thoracolumbar and lumbar adolescent idiopathic scoliosis using pedicle screw instrumentation

Asian Spine Journal, 2014, 8(6), , pp.804-812

2014

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Effect of pH and temperature on orthodontic NiTi wires immersed in acidic fluoride solution

Journal of biomedical materials research. Part B, Applied biomaterials, 2006-10, Vol.79B (1), p.7-15

2006

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Enamel surface evaluation after removal of orthodontic composite remnants by intraoral sandblasting: A 3-dimensional surface profilometry study

American journal of orthodontics and dentofacial orthopedics, 2007-07, Vol.132 (1), p.71-76

2007

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Growth of hexagonal-shape Si on a 4H–SiC substrate by mixed-source hydride vapor phase epitaxy

Journal of the Korean Physical Society, 2024, 84(3), , pp.198-207

2024

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HVPE growth of Si crystal with topological chiral morphology

Journal of the Korean Physical Society, 2024, 85(4), , pp.315-326

2024

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Electrical properties of 2H-Si microwire grown by mixed-source hydride vapor phase epitaxy

Results in physics, 2022-09, Vol.40, p.105857, Article 105857

2022

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Enhancing SERS Intensity by Coupling PSPR and LSPR in a Crater Structure with Ag Nanowires

Applied sciences, 2021-12, Vol.11 (24), p.11855

2021

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Low Female Political Representation in the US: An Institution-Based Explanation

Journal of International and Area Studies, 2019, 26(1), , pp.65-87

2019

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Growth of a Thick AlN Epilayer by Using the Mixed-Source Hydride Vapor Phase Epitaxy Method

Journal of the Korean Physical Society, 2020, 77(4), , pp.282-287

2020

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Nature of yellow luminescence band in GaN grown on Si substrate

Japanese Journal of Applied Physics, 2014-11, Vol.53 (11S), p.11-1-11RC02-5

2014

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Electrode-Evaporation Method of III-nitride Vertical-type Single Chip LEDs

Journal of the Korean Physical Society, 2018, 73(9), , pp.1346-1350

2018

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A GaN nanoneedle inorganic/organic heterojunction structure for optoelectronic devices

Materials letters, 2013-01, Vol.91 (15), p.191-194

2013

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AlN and AlGaN layers grown on Si(111) substrate by mixed-source hydride vapor phase epitaxy method

Japanese Journal of Applied Physics, 2017-01, Vol.56 (1S), p.1-01AD07

2017

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Optically detected electrophonon resonance effects in quantum wells

Physica. E, Low-dimensional systems & nanostructures, 2005-09, Vol.28 (4), p.402-411

2005

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Mechanism of light emission and manufacturing process of vertical-type light-emitting diode grown by hydride vapor phase epitaxy

Japanese Journal of Applied Physics, 2017-01, Vol.56 (1S), p.1-01AD03

2017

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Growth of AlN layer on patterned sapphire substrate by hydride vapor phase epitaxy

Japanese Journal of Applied Physics, 2016-05, Vol.55 (5S), p.5

2016

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Fabrication of selective-area growth InGaN LED by mixed-source hydride vapor-phase epitaxy

Japanese Journal of Applied Physics, 2018-01, Vol.57 (1S), p.1

2018

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UV-Light Irradiation Effect on Room-Temperature-Processed ZnO/p-Si

Journal of the Korean Physical Society, 2007, 51(II), , pp.115-119

2007

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Fabrication of n-GaN/MDMO-PPV hybrid structures for optoelectronic devices

Journal of luminescence, 2014-03, Vol.147, p.1-4

2014

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Angular dependence of magnetophonon resonances in semiconductor superlattices in tilted magnetic fields

Physica. B, Condensed matter, 2007, Vol.387 (1), p.313-322

2007

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Microstructural analysis of InGaN/GaN epitaxial layers of metal organic chemical vapor deposition on c-plane of convex patterned sapphire substrate

Thin solid films, 2013-11, Vol.546, p.104-107

2013

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Optical property and collective excitation of plasmon in a multiple-quantum-well superlattice in electric field

Physica. B, Condensed matter, 2012-09, Vol.407 (17), p.3487-3492

2012

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Maskless selective growth of semi-polar (1 12¯ 2) GaN on Si (3 1 1) substrate by metal organic vapor phase epitaxy

Journal of crystal growth, 2009-05, Vol.311 (10), p.2914-2918

2009

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A study on the origin of emission of the annealed n-ZnO/p-GaN heterostructure LED

Optical properties of plasmons in a multiple quantum well semiconductor superlattice under electric and magnetic fields

Determination of the distal fusion level in the management of thoracolumbar and lumbar adolescent idiopathic scoliosis using pedicle screw instrumentation

Effect of pH and temperature on orthodontic NiTi wires immersed in acidic fluoride solution

Enamel surface evaluation after removal of orthodontic composite remnants by intraoral sandblasting: A 3-dimensional surface profilometry study

Growth of hexagonal-shape Si on a 4H–SiC substrate by mixed-source hydride vapor phase epitaxy

HVPE growth of Si crystal with topological chiral morphology

Electrical properties of 2H-Si microwire grown by mixed-source hydride vapor phase epitaxy

Enhancing SERS Intensity by Coupling PSPR and LSPR in a Crater Structure with Ag Nanowires

Low Female Political Representation in the US: An Institution-Based Explanation

Growth of a Thick AlN Epilayer by Using the Mixed-Source Hydride Vapor Phase Epitaxy Method

Nature of yellow luminescence band in GaN grown on Si substrate

Electrode-Evaporation Method of III-nitride Vertical-type Single Chip LEDs

A GaN nanoneedle inorganic/organic heterojunction structure for optoelectronic devices

AlN and AlGaN layers grown on Si(111) substrate by mixed-source hydride vapor phase epitaxy method

Optically detected electrophonon resonance effects in quantum wells

Mechanism of light emission and manufacturing process of vertical-type light-emitting diode grown by hydride vapor phase epitaxy

Growth of AlN layer on patterned sapphire substrate by hydride vapor phase epitaxy

Fabrication of selective-area growth InGaN LED by mixed-source hydride vapor-phase epitaxy

UV-Light Irradiation Effect on Room-Temperature-Processed ZnO/p-Si

Fabrication of n-GaN/MDMO-PPV hybrid structures for optoelectronic devices

Angular dependence of magnetophonon resonances in semiconductor superlattices in tilted magnetic fields

Microstructural analysis of InGaN/GaN epitaxial layers of metal organic chemical vapor deposition on c-plane of convex patterned sapphire substrate

Optical property and collective excitation of plasmon in a multiple-quantum-well superlattice in electric field

Maskless selective growth of semi-polar (1 12¯ 2) GaN on Si (3 1 1) substrate by metal organic vapor phase epitaxy

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