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Fecal incontinence knowledge, attitudes, and help-seeking behaviors among community-dwelling adults in Korea

Neurourology and urodynamics, 2018-04, Vol.37 (4), p.1474-1484

2018

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Preparation of Apixaban Solid Dispersion for the Enhancement of Apixaban Solubility and Permeability

Pharmaceutics, 2023-03, Vol.15 (3), p.907

2023

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Pharmacokinetic Profile and Anti-Adhesive Effect of Oxaliplatin-PLGA Microparticle-Loaded Hydrogels in Rats for Colorectal Cancer Treatment

Pharmaceutics, 2019-08, Vol.11 (8), p.392

2019

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High Efficiency and Low EMI Wireless Power Transmitter Module with on-chip V/I Monitoring Circuits

JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE, 2018, 18(2), 80, pp.255-261

2018

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Preparation and characterization of lysozyme loaded liposomal dry powder inhalation using non-ionic surfactants

International journal of pharmaceutics, 2023-11, Vol.646, p.123426-123426, Article 123426

2023

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4-Hexylresorcinol Loaded Solid Lipid Nanoparticles for Enhancing Anticancer Activity

Pharmaceuticals (Basel, Switzerland), 2024-09, Vol.17 (10), p.1296

2024

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Intracorneal melatonin delivery using 2-hydroxypropyl-β-cyclodextrin ophthalmic solution for granular corneal dystrophy type 2

International journal of pharmaceutics, 2017-08, Vol.529 (1-2), p.608-616

2017

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Formation of Low-Resistivity Nickel Germanide Using Atomic Layer Deposited Nickel Thin Film

IEEE transactions on electron devices, 2017-06, Vol.64 (6), p.2599-2603

2017

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The Work Function Behavior of Aluminum-Doped Titanium Carbide Grown by Atomic Layer Deposition

IEEE transactions on electron devices, 2016-04, Vol.63 (4), p.1423-1427

2016

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Fermi Level Depinning in Ti/GeO2/n-Ge via the Interfacial Reaction Between Ti and GeO2

IEEE transactions on electron devices, 2017-10, Vol.64 (10), p.4242-4245

2017

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Very Low-Work-Function ALD-Erbium Carbide (ErC2) Metal Electrode on High- K Dielectrics

IEEE transactions on electron devices, 2016-07, Vol.63 (7), p.2858-2863

2016

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Capacitance Boosting by Anti-Ferroelectric Blocking Layer in Charge Trap Flash Memory Device

2020 IEEE International Electron Devices Meeting (IEDM), 2020, p.6.2.1-6.2.4

2020

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Fluorine Effects Originating From the CVD-W Process on Charge-Trap Flash Memory Cells

IEEE transactions on electron devices, 2019-01, Vol.66 (1), p.378-382

2019

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28 GHz GaAs pHEMT MMICs and RF front‐end module for 5G communication systems

Microwave and optical technology letters, 2019-04, Vol.61 (4), p.878-882

2019

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Ultrathin EOT (0.67 nm) High-k Dielectric on Ge MOSFET Using Y Doped ZrO2 With Record-Low Leakage Current

IEEE electron device letters, 2019-04, Vol.40 (4), p.502-505

2019

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H 2 High Pressure Annealed Y-Doped ZrO 2 Gate Dielectric With an EOT of 0.57 nm for Ge MOSFETs

IEEE electron device letters, 2019-09, Vol.40 (9), p.1350-1353

2019

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Ultrathin EOT (0.67 nm) High-k Dielectric on Ge MOSFET Using Y Doped ZrO 2 With Record-Low Leakage Current

IEEE electron device letters, 2019-04, Vol.40 (4), p.502-505

2019

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Fermi Level Depinning in Ti/GeO 2 /n-Ge via the Interfacial Reaction Between Ti and GeO 2

IEEE transactions on electron devices, 2017-10, Vol.64 (10), p.4242-4245

2017

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28GHz GaAs pHEMT MMICs and RF front‐end module for 5G communication systems

Microwave and optical technology letters, 2019-04, Vol.61 (4), p.878-882

2019

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H2 High Pressure Annealed Y-Doped ZrO2 Gate Dielectric With an EOT of 0.57 nm for Ge MOSFETs

IEEE electron device letters, 2019-09, Vol.40 (9), p.1350-1353

2019

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Very Low-Work-Function ALD-Erbium Carbide (ErC2) Metal Electrode on High-[Formula Omitted] Dielectrics

IEEE transactions on electron devices, 2016-07, Vol.63 (7), p.2858

2016

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Lowering the effective work function via oxygen vacancy formation on the GeO2/Ge interface

Solid-state electronics, 2017-04, Vol.130, p.57-62

2017

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Temperature control for the gate workfunction engineering of TiC film by atomic layer deposition

Solid-state electronics, 2015-12, Vol.114, p.90-93

2015

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First demonstration of a wrap-gated CNT-FET with vertically-suspended channels

2016 IEEE International Electron Devices Meeting (IEDM), 2016, p.5.2.1-5.2.4

2016

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Selective Pore-Sealing of Highly Porous Ultralow-k dielectrics for ULSI Interconnects by Cyclic Initiated Chemical Vapor Deposition Process

2018 IEEE Symposium on VLSI Technology, 2018, p.73-74

2018

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Fecal incontinence knowledge, attitudes, and help-seeking behaviors among community-dwelling adults in Korea

Preparation of Apixaban Solid Dispersion for the Enhancement of Apixaban Solubility and Permeability

Pharmacokinetic Profile and Anti-Adhesive Effect of Oxaliplatin-PLGA Microparticle-Loaded Hydrogels in Rats for Colorectal Cancer Treatment

High Efficiency and Low EMI Wireless Power Transmitter Module with on-chip V/I Monitoring Circuits

Preparation and characterization of lysozyme loaded liposomal dry powder inhalation using non-ionic surfactants

4-Hexylresorcinol Loaded Solid Lipid Nanoparticles for Enhancing Anticancer Activity

Intracorneal melatonin delivery using 2-hydroxypropyl-β-cyclodextrin ophthalmic solution for granular corneal dystrophy type 2

Formation of Low-Resistivity Nickel Germanide Using Atomic Layer Deposited Nickel Thin Film

The Work Function Behavior of Aluminum-Doped Titanium Carbide Grown by Atomic Layer Deposition

Fermi Level Depinning in Ti/GeO2/n-Ge via the Interfacial Reaction Between Ti and GeO2

Very Low-Work-Function ALD-Erbium Carbide (ErC2) Metal Electrode on High- K Dielectrics

Capacitance Boosting by Anti-Ferroelectric Blocking Layer in Charge Trap Flash Memory Device

Fluorine Effects Originating From the CVD-W Process on Charge-Trap Flash Memory Cells

28 GHz GaAs pHEMT MMICs and RF front‐end module for 5G communication systems

Ultrathin EOT (0.67 nm) High-k Dielectric on Ge MOSFET Using Y Doped ZrO2 With Record-Low Leakage Current

H 2 High Pressure Annealed Y-Doped ZrO 2 Gate Dielectric With an EOT of 0.57 nm for Ge MOSFETs

Ultrathin EOT (0.67 nm) High-k Dielectric on Ge MOSFET Using Y Doped ZrO 2 With Record-Low Leakage Current

Fermi Level Depinning in Ti/GeO 2 /n-Ge via the Interfacial Reaction Between Ti and GeO 2

28GHz GaAs pHEMT MMICs and RF front‐end module for 5G communication systems

H2 High Pressure Annealed Y-Doped ZrO2 Gate Dielectric With an EOT of 0.57 nm for Ge MOSFETs

Very Low-Work-Function ALD-Erbium Carbide (ErC2) Metal Electrode on High-[Formula Omitted] Dielectrics

Lowering the effective work function via oxygen vacancy formation on the GeO2/Ge interface

Temperature control for the gate workfunction engineering of TiC film by atomic layer deposition

First demonstration of a wrap-gated CNT-FET with vertically-suspended channels

Selective Pore-Sealing of Highly Porous Ultralow-k dielectrics for ULSI Interconnects by Cyclic Initiated Chemical Vapor Deposition Process

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