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Room-Temperature Ferromagnetism in Transparent Transition Metal-Doped Titanium Dioxide

Science (American Association for the Advancement of Science), 2001-02, Vol.291 (5505), p.854-856

2001

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Electron-beam-induced current study of small-angle grain boundaries in multicrystalline silicon

Scripta materialia, 2005-06, Vol.52 (12), p.1211-1215

2005

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Current conduction and stability of CeO2/La2O3 stacked gate dielectric

Applied physics letters, 2012-12, Vol.101 (23)

2012

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Anatase TiO2 thin films grown on lattice-matched LaAlO3 substrate by laser molecular-beam epitaxy

Applied physics letters, 2001-04, Vol.78 (18), p.2664-2666

2001

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Resistive switching behavior of a CeO2 based ReRAM cell incorporated with Si buffer layer

Microelectronics and reliability, 2012-04, Vol.52 (4), p.688-691

2012

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ZnO–CoO solid solution thin films

Journal of applied physics, 2001-10, Vol.90 (8), p.4246-4250

2001

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Effects of aluminum doping on lanthanum oxide gate dielectric films

Vacuum, 2012-02, Vol.86 (7), p.929-932

2012

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Properties of CeOx/La2O3 gate dielectric and its effects on the MOS transistor characteristics

Vacuum, 2012-02, Vol.86 (7), p.990-993

2012

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La2O3/In0.53Ga0.47As metal–oxide-semiconductor capacitor with low interface state density using TiN/W gate electrode

Solid-state electronics, 2013-04, Vol.82, p.29-33

2013

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Interface and electrical properties of La-silicate for direct contact of high- k with silicon

Solid-state electronics, 2010-07, Vol.54 (7), p.715-719

2010

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Characterization of flatband voltage roll-off and roll-up behavior in La2O3/silicate gate dielectric

Solid-state electronics, 2010-07, Vol.54 (7), p.720-723

2010

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Origin of flat band voltage shift in HfO2 gate dielectric with La2O3 insertion

Solid-state electronics, 2008-09, Vol.52 (9), p.1280-1284

2008

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Advantage of further scaling in gate dielectrics below 0.5 nm of equivalent oxide thickness with La2O3 gate dielectrics

Microelectronics and reliability, 2010-06, Vol.50 (6), p.790-793

2010

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Compensation of oxygen defects in La-silicate gate dielectrics for improving effective mobility in high-k/metal gate MOSFET using oxygen annealing process

Solid-state electronics, 2012-02, Vol.68, p.68-72

2012

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Valence number transition and silicate formation of cerium oxide films on Si(100)

Vacuum, 2012-04, Vol.86 (10), p.1513-1516

2012

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Comprehensive x-ray photoelectron spectroscopy study on compositional gradient lanthanum silicate film

Journal of applied physics, 2009-12, Vol.106 (12), p.124903-124903-6

2009

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Physical and electrical properties of ultra-thin nickel silicide Schottky diodes on Si (100)

Journal of physics. Conference series, 2013-03, Vol.417 (1), p.12015-4

2013

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Selection of rare earth silicates for highly scaled gate dielectrics

Microelectronic engineering, 2010-10, Vol.87 (10), p.1868-1871

2010

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Schottky metal library for ZNO-based UV photodiode fabricated by the combinatorial ion beam-assisted deposition

Applied surface science, 2006-01, Vol.252 (7), p.2503-2506

2006

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Post metallization annealing study in La2O3/Ge MOS structure

Microelectronic engineering, 2009-07, Vol.86 (7-9), p.1638-1641

2009

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Yttrium–scandium oxide as high-k gate dielectric for germanium metal–oxide–semiconductor devices

Semiconductor science and technology, 2010-06, Vol.25 (6), p.065008-065008

2010

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Amorphous stability of HfO2 based ternary and binary composition spread oxide films as alternative gate dielectrics

Applied surface science, 2004-02, Vol.223 (1-3), p.229-232

2004

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Improvement of interfacial properties with interfacial layer in La2O3/Ge structure

Microelectronic engineering, 2007-09, Vol.84 (9-10), p.2336-2339

2007

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Oxide and interface trap densities estimation in ultrathin W/La2O3/Si MOS capacitors

Microelectronics and reliability, 2012-06, Vol.52 (6), p.1039-1042

2012

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GaN nanostructure fabrication by focused-ion-beam-assisted chemical vapor deposition

Applied physics letters, 2005-07, Vol.87 (1), p.013103-013103-3

2005

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Room-Temperature Ferromagnetism in Transparent Transition Metal-Doped Titanium Dioxide

Electron-beam-induced current study of small-angle grain boundaries in multicrystalline silicon

Current conduction and stability of CeO2/La2O3 stacked gate dielectric

Anatase TiO2 thin films grown on lattice-matched LaAlO3 substrate by laser molecular-beam epitaxy

Resistive switching behavior of a CeO2 based ReRAM cell incorporated with Si buffer layer

ZnO–CoO solid solution thin films

Effects of aluminum doping on lanthanum oxide gate dielectric films

Properties of CeOx/La2O3 gate dielectric and its effects on the MOS transistor characteristics

La2O3/In0.53Ga0.47As metal–oxide-semiconductor capacitor with low interface state density using TiN/W gate electrode

Interface and electrical properties of La-silicate for direct contact of high- k with silicon

Characterization of flatband voltage roll-off and roll-up behavior in La2O3/silicate gate dielectric

Origin of flat band voltage shift in HfO2 gate dielectric with La2O3 insertion

Advantage of further scaling in gate dielectrics below 0.5 nm of equivalent oxide thickness with La2O3 gate dielectrics

Compensation of oxygen defects in La-silicate gate dielectrics for improving effective mobility in high-k/metal gate MOSFET using oxygen annealing process

Valence number transition and silicate formation of cerium oxide films on Si(100)

Comprehensive x-ray photoelectron spectroscopy study on compositional gradient lanthanum silicate film

Physical and electrical properties of ultra-thin nickel silicide Schottky diodes on Si (100)

Selection of rare earth silicates for highly scaled gate dielectrics

Schottky metal library for ZNO-based UV photodiode fabricated by the combinatorial ion beam-assisted deposition

Post metallization annealing study in La2O3/Ge MOS structure

Yttrium–scandium oxide as high-k gate dielectric for germanium metal–oxide–semiconductor devices

Amorphous stability of HfO2 based ternary and binary composition spread oxide films as alternative gate dielectrics

Improvement of interfacial properties with interfacial layer in La2O3/Ge structure

Oxide and interface trap densities estimation in ultrathin W/La2O3/Si MOS capacitors

GaN nanostructure fabrication by focused-ion-beam-assisted chemical vapor deposition

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