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Anomalous Hall Effect in GaAs–AlGaAs Quantum Wells Doped by Nonmagnetic Impurities near the Metal–Insulator Transition

Journal of experimental and theoretical physics, 2022-07, Vol.135 (1), p.107-111

2022

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Spin Glass and Isotropic Negative Magnetoresistance in GaAs–AlGaAs Quantum Wells with a Virtual Anderson Transition

Journal of experimental and theoretical physics, 2021-05, Vol.132 (5), p.810-817

2021

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Spin Glass Model for GaAs/AlGaAs Quantum Wells Doped by Nonmagnetic Impurities near the Metal-Insulator Transition

Journal of experimental and theoretical physics, 2023-11, Vol.137 (5), p.688-694

2023

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Electric bias-controlled switching of magnetization of ferrimagnetically coupled Mn delta-layers in a GaAs-AlGaAs quantum well

Journal of magnetism and magnetic materials, 2020-09, Vol.509, p.166621, Article 166621

2020

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Dynamic Spin Phenomena in Complex Structures Based on Ferromagnetic Metals and Semiconductors (Scientific Summary)

JETP letters, 2019-10, Vol.110 (7), p.495-504

2019

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Ferromagnetic ordering in doped by Mn GaAs quantum wells supported by the upper Hubbard band of Mn centers

Journal of magnetism and magnetic materials, 2018-11, Vol.466, p.180-185

2018

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Effect of temperature and magnetic field on disorder in semiconductor structures

Journal of experimental and theoretical physics, 2017-02, Vol.124 (2), p.311-317

2017

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Spin-controlled negative magnetoresistance resulting from exchange interactions

JETP letters, 2017-04, Vol.105 (8), p.484-487

2017

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Transition between Electron Localization and Antilocalization and Manifestation of the Berry Phase in Graphene on a SiC Surface

Semiconductors (Woodbury, N.Y.), 2018-12, Vol.52 (12), p.1616-1620

2018

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Ferromagnetic ordering in Mn-doped quantum wells GaAs-AlGaAs resulting from the virtual Anderson transition

AIP Conference Proceedings, 2014, Vol.1610 (1), p.112

2014

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Slow relaxation of magnetoresistance in AlGaAs–GaAs quantum well structures quenched in a magnetic field

Journal of physics. Condensed matter, 2010-10, Vol.22 (40), p.405301-405301

2010

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Anomalous electron transport in doped uncompensated p-GaAs/AlGaAs quantum wells: evidence of virtual Anderson transition

Journal of physics. Condensed matter, 2008-10, Vol.20 (39), p.395216-395216 (9)

2008

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The destruction of the virtual Anderson transition in a narrow impurity band of doped quantum well structures

Journal of physics. Conference series, 2012-01, Vol.376 (1), p.12014-6

2012

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Photoluminescence and transport in selectively doped p-GaAs/AlGaAs quantum wells: manifestation of the upper Hubbard band

Solid state communications, 2003-05, Vol.126 (7), p.369-372

2003

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Magnetoresistance related to on-site spin correlations in the nearest neighbor hopping conductivity

Solid state communications, 1998-10, Vol.108 (6), p.355-359

1998

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Crossover from strong to weak localization in the split-off impurity band in two-dimensional p -GaAs/AlGaAs structures

Physica status solidi. C, 2006-02, Vol.3 (2), p.329-333

2006

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Scaling of the breakdown in the impurity band of doped GaAs/AlGaAs quantum well demonstrating virtual Anderson transition

Solid state communications, 2017-07, Vol.260, p.6-9

2017

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Temperature-dependent disorder and magnetic field driven disorder: Experimental observations for doped GaAs/AlGaAs quantum well structures

Solid state communications, 2016-01, Vol.225, p.56-60

2016

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Ferromagnetism mediated by the upper Hubbard band in selectively doped GaAs/AlGaAs structures

JETP letters, 2015-08, Vol.102 (4), p.222-225

2015

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Metal-insulator transition in two dimensions: Role of the upper Hubbard band

Physical review. B, Condensed matter, 2001-12, Vol.64 (24), Article 245103

2001

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Ferromagnetic ordering in Mn-doped quantum wells GaAs–AlGaAs resulting from the virtual Anderson transition

Solid state communications, 2014-04, Vol.183, p.27-30

2014

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Galvanomagnetic Properties of 3C-SiC/6H-SiC Heterostructures

Materials science forum, 2009, Vol.600-603, p.541-544

2009

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Investigation of the Metal–Insulator Transition in n-3C-SiC Epitaxial Films

Materials science forum, 2009-01, Vol.615-617, p.335-338

2009

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To what extent the four-probes transport measurements allow to neglect a role of current leads?

Journal of applied physics, 2011-08, Vol.110 (3), p.033722-033722-2

2011

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Features of the conductivity and magnetoresistance of doped two-dimensional structures near a metal-insulator transition

JETP letters, 2013-11, Vol.98 (5), p.304-311

2013

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Anomalous Hall Effect in GaAs–AlGaAs Quantum Wells Doped by Nonmagnetic Impurities near the Metal–Insulator Transition

Spin Glass and Isotropic Negative Magnetoresistance in GaAs–AlGaAs Quantum Wells with a Virtual Anderson Transition

Spin Glass Model for GaAs/AlGaAs Quantum Wells Doped by Nonmagnetic Impurities near the Metal-Insulator Transition

Electric bias-controlled switching of magnetization of ferrimagnetically coupled Mn delta-layers in a GaAs-AlGaAs quantum well

Dynamic Spin Phenomena in Complex Structures Based on Ferromagnetic Metals and Semiconductors (Scientific Summary)

Ferromagnetic ordering in doped by Mn GaAs quantum wells supported by the upper Hubbard band of Mn centers

Effect of temperature and magnetic field on disorder in semiconductor structures

Spin-controlled negative magnetoresistance resulting from exchange interactions

Transition between Electron Localization and Antilocalization and Manifestation of the Berry Phase in Graphene on a SiC Surface

Ferromagnetic ordering in Mn-doped quantum wells GaAs-AlGaAs resulting from the virtual Anderson transition

Slow relaxation of magnetoresistance in AlGaAs–GaAs quantum well structures quenched in a magnetic field

Anomalous electron transport in doped uncompensated p-GaAs/AlGaAs quantum wells: evidence of virtual Anderson transition

The destruction of the virtual Anderson transition in a narrow impurity band of doped quantum well structures

Photoluminescence and transport in selectively doped p-GaAs/AlGaAs quantum wells: manifestation of the upper Hubbard band

Magnetoresistance related to on-site spin correlations in the nearest neighbor hopping conductivity

Crossover from strong to weak localization in the split-off impurity band in two-dimensional p -GaAs/AlGaAs structures

Scaling of the breakdown in the impurity band of doped GaAs/AlGaAs quantum well demonstrating virtual Anderson transition

Temperature-dependent disorder and magnetic field driven disorder: Experimental observations for doped GaAs/AlGaAs quantum well structures

Ferromagnetism mediated by the upper Hubbard band in selectively doped GaAs/AlGaAs structures

Metal-insulator transition in two dimensions: Role of the upper Hubbard band

Ferromagnetic ordering in Mn-doped quantum wells GaAs–AlGaAs resulting from the virtual Anderson transition

Galvanomagnetic Properties of 3C-SiC/6H-SiC Heterostructures

Investigation of the Metal–Insulator Transition in n-3C-SiC Epitaxial Films

To what extent the four-probes transport measurements allow to neglect a role of current leads?

Features of the conductivity and magnetoresistance of doped two-dimensional structures near a metal-insulator transition

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