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Vibrational properties of epitaxial silicene layers on (111) Ag

Applied surface science, 2014-02, Vol.291, p.113-117

2014

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Theoretical aspects of graphene-like group IV semiconductors

Applied surface science, 2014-02, Vol.291, p.98-103

2014

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High- k dielectrics for future generation memory devices (Invited Paper)

Microelectronic engineering, 2009-07, Vol.86 (7), p.1789-1795

2009

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Towards barrier height modulation in HfO2/TiN by oxygen scavenging ― Dielectric defects or metal induced gap states?

Microelectronic engineering, 2011-07, Vol.88 (7), p.1251-1254

2011

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A study of the leakage current in TiN/HfO2/TiN capacitors

Microelectronic engineering, 2012-07, Vol.95, p.71-73

2012

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SrTiOx for sub-20nm DRAM technology nodes—Characterization and modeling

Microelectronic engineering, 2015-11, Vol.147, p.126-129

2015

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Comprehensive investigation of trap-assisted conduction in ultra-thin SrTiO3 layers

Microelectronic engineering, 2009-07, Vol.86 (7-9), p.1815-1817

2009

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Defect correlated with positive charge trapping in functional HfO2 layers on (100)Si revealed by electron spin resonance: Evidence for oxygen vacancy?

Microelectronic engineering, 2017-06, Vol.178, p.112-115

2017

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Intrinsic band edge traps in nano-crystalline HfO2 gate dielectrics

Microelectronic engineering, 2005-06, Vol.80, p.110-113

2005

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Effect of hydroisostatic compensation depending on the shelf width on the example of the Laptev and the East Siberian seas

Геосистемы переходных зон, 2020, Vol.4 (3), p.305-320

2020

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Deep electron traps in HfO2-based ferroelectrics: (Al/Si-doped) HfO2 versus HfZrO4

Solid-state electronics, 2022-08, Vol.194, p.108388, Article 108388

2022

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Electronic structure of silicon interfaces with amorphous and epitaxial insulating oxides : Sc2O3, Lu2O3, LaLuO3

Microelectronic engineering, 2007-09, Vol.84 (9-10), p.2278-2281

2007

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Point defects in MoS2: Comparison between first-principles simulations and electron spin resonance experiments

Applied surface science, 2017-09, Vol.416, p.853-857

2017

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Optical transitions in monolayer WS2 observed through transient photoconductivity in MIS structures

Solid-state electronics, 2021-09, Vol.183, p.108033, Article 108033

2021

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Electrical characteristics of Ge/GeOx(N)/HfO2 gate stacks

Journal of non-crystalline solids, 2005-07, Vol.351 (21-23), p.1902-1905

2005

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Impact of CVD chemistry on band alignment at the MoS2/SiO2 interface

Solid-state electronics, 2023-11, Vol.209, p.108782, Article 108782

2023

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First-principles electronic functionalization of silicene and germanene by adatom chemisorption

Applied surface science, 2014-02, Vol.291, p.104-108

2014

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Point defects in MoS 2 : Comparison between first-principles simulations and electron spin resonance experiments

Applied surface science, 2017-09, Vol.416, p.853-857

2017

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Scanning tunneling microscopy for imaging and quantification of defects in as-deposited MoS 2 monolayers on sapphire substrates

Solid-state electronics, 2023-11, Vol.209, p.108781, Article 108781

2023

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Electron trapping in ferroelectric HfZrO4 and Al- and Si-doped layers

Solid-state electronics, 2021-09, Vol.183, p.108066, Article 108066

2021

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Scanning tunneling microscopy for imaging and quantification of defects in as-deposited MoS2 monolayers on sapphire substrates

Solid-state electronics, 2023-11, Vol.209, Article 108781

2023

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Band offsets at interfaces of (100)InxGa1−xAs (0⩽x⩽0.53) with Al2O3 and HfO2

Microelectronic engineering, 2009-07, Vol.86 (7-9), p.1550-1553

2009

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Band alignment at interfaces of few-monolayer MoS2 with SiO2 and HfO2

Microelectronic engineering, 2015-11, Vol.147, p.294-297

2015

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Structural and electronic rearrangement in ovonic switching GexSe1-x(0,4 ≤ x ≤ 0,72) films

Solid-state electronics, 2021-12, Vol.186, p.108084, Article 108084

2021

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Shallow electron traps in high-k insulating oxides

Solid-state electronics, 2021-09, Vol.183, p.108052, Article 108052

2021

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Vibrational properties of epitaxial silicene layers on (111) Ag

Theoretical aspects of graphene-like group IV semiconductors

High- k dielectrics for future generation memory devices (Invited Paper)

Towards barrier height modulation in HfO2/TiN by oxygen scavenging ― Dielectric defects or metal induced gap states?

A study of the leakage current in TiN/HfO2/TiN capacitors

SrTiOx for sub-20nm DRAM technology nodes—Characterization and modeling

Comprehensive investigation of trap-assisted conduction in ultra-thin SrTiO3 layers

Defect correlated with positive charge trapping in functional HfO2 layers on (100)Si revealed by electron spin resonance: Evidence for oxygen vacancy?

Intrinsic band edge traps in nano-crystalline HfO2 gate dielectrics

Effect of hydroisostatic compensation depending on the shelf width on the example of the Laptev and the East Siberian seas

Deep electron traps in HfO2-based ferroelectrics: (Al/Si-doped) HfO2 versus HfZrO4

Electronic structure of silicon interfaces with amorphous and epitaxial insulating oxides : Sc2O3, Lu2O3, LaLuO3

Point defects in MoS2: Comparison between first-principles simulations and electron spin resonance experiments

Optical transitions in monolayer WS2 observed through transient photoconductivity in MIS structures

Electrical characteristics of Ge/GeOx(N)/HfO2 gate stacks

Impact of CVD chemistry on band alignment at the MoS2/SiO2 interface

First-principles electronic functionalization of silicene and germanene by adatom chemisorption

Point defects in MoS 2 : Comparison between first-principles simulations and electron spin resonance experiments

Scanning tunneling microscopy for imaging and quantification of defects in as-deposited MoS 2 monolayers on sapphire substrates

Electron trapping in ferroelectric HfZrO4 and Al- and Si-doped layers

Scanning tunneling microscopy for imaging and quantification of defects in as-deposited MoS2 monolayers on sapphire substrates

Band offsets at interfaces of (100)InxGa1−xAs (0⩽x⩽0.53) with Al2O3 and HfO2

Band alignment at interfaces of few-monolayer MoS2 with SiO2 and HfO2

Structural and electronic rearrangement in ovonic switching GexSe1-x(0,4 ≤ x ≤ 0,72) films

Shallow electron traps in high-k insulating oxides

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