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Growth of dilute nitrides and 1.3 mu m edge emitting lasers on GaAs by MBE

Physica Status Solidi (B): Basic Research, 2011-05, Vol.248 (5), p.1207-1211

2011

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Direct Observation of Lateral Carrier Diffusion in Ridge Waveguide InGaNAs Lasers

IEEE photonics technology letters, 2009-01, Vol.21 (3), p.134-136

2009

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High-performance long-wavelength InGaAs/GaAs multiple quantum-well lasers grown by molecular beam epitaxy

Electronics letters, 2007-04, Vol.43 (8), p.454-456

2007

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Very low threshold current density 1.29 [micro sign]m GaInNAs triple quantum well lasers grown by MBE

Electronics letters, 2008, Vol.44 (6), p.416

2008

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Growth of GaInNAs and 1.3 μm edge emitting lasers by molecular beam epitaxy

Journal of crystal growth, 2009-03, Vol.311 (7), p.1863-1867

2009

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Effects of Lateral Diffusion on the Temperature Sensitivity of the Threshold Current for 1.3- \mu} Double Quantum-Well GaInNAs-GaAs Lasers

IEEE journal of quantum electronics, 2008-07, Vol.44 (7), p.607-616

2008

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The Martian Atmosphere as a Meteoroid Detector

Icarus (New York, N.Y. 1962), 1996-01, Vol.119 (1), p.144-152

1996

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Thermal performance investigation of DQW GaInNAs laser diodes

Optical and quantum electronics, 2008-04, Vol.40 (5-6), p.385-390

2008

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Frothing Phenomena in Phosphate Gangue Flotation from Magnetite Fines with Fatty Acid based Collector and MIBC Frother

The open mineral processing journal, 2013-08, Vol.6 (1), p.1-12

Vilinska, A.

2013

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Very-low-threshold current density 1.29 [micro sign]m GaInNAs triple quantum well lasers grown by molecular beam epitaxy

Electronics letters, 2008, Vol.44 (7), p.475

2008

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High-performance long-wavelength InGaAs/GaAs multiple quantum-well lasers grown by molecular beam epitaxy

Electronics letters, 2007-04, Vol.43 (8), p.1-1

2007

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Growth of dilute nitrides and 1.3 µm edge emitting lasers on GaAs by MBE

physica status solidi (b), 2011-05, Vol.248 (5), p.1207-1211

2011

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Direct Observation of Lateral Carrier Diffusion in Ridge Waveguide InGaNAs Lasers

IEEE photonics technology letters, 2009-02, Vol.21 (3), p.134-136

2009

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Growth of dilute nitrides and 1.3 μm edge emitting lasers on GaAs by MBE : Novel Gain Materials Based on III-V-N Compounds

Physica status solidi. B. Basic research, 2011, Vol.248 (5), p.1207-1211

2011

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Growth of GaInNAs and 1.3 mum edge emitting lasers by molecular beam epitaxy

Journal of crystal growth, 2009-03, Vol.311 (7), p.1863-1867

2009

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Very-low-threshold current density 1.29 µm GaInNAs triple quantum well lasers grown by molecular beam epitaxy

Electronics letters, 2008-03, Vol.44 (7), p.1

2008

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Very low threshold current density 1.29 µm GaInNAs triple quantum well lasers grown by MBE

Electronics letters, 2008-03, Vol.44 (6), p.1

2008

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Very-low-threshold current density 1.29 mu m GaInNAs triple quantum well lasers grown by molecular beam epitaxy

Electronics letters, 2008-03, Vol.44 (7), p.1-1

2008

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Very low threshold current density 1.29 mu m GaInNAs triple quantum well lasers grown by MBE

Electronics letters, 2008-03, Vol.44 (6), p.1-1

2008

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Very low threshold current density 1.29 μm GalnNAs triple quantum well lasers grown by MBE

Electronics letters, 2008-03, Vol.44 (6), p.416-417

2008

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Very-low-threshold current density 1.29 μm GalnNAs triple quantum well lasers grown by molecular beam epitaxy

Electronics letters, 2008, Vol.44 (7), p.475-477

2008

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Effects of Lateral Diffusion on the Temperature Sensitivity of the Threshold Current for 1.3-[mu{hbox {m}}] Double Quantum-Well GaInNAs-GaAs Lasers

IEEE journal of quantum electronics, 2008-07, Vol.44 (7), p.607-616

2008

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Effects of Lateral Diffusion on the Temperature Sensitivity of the Threshold Current for 1.3- Double Quantum-Well GaInNAsaGaAs Lasers

IEEE journal of quantum electronics, 2008-01, Vol.44 (7)

2008

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Effects of Lateral Diffusion on the Temperature Sensitivity of the Threshold Current for 1.3-[Formula Omitted] Double Quantum-Well GaInNAs-GaAs Lasers

IEEE journal of quantum electronics, 2008-07, Vol.44 (7), p.607

2008

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Static and dynamic performance optimisation of a 1.3 μm GaInNAs ridge waveguide laser

Optical and quantum electronics, 2008-11, Vol.40 (14-15), p.1181-1186

2008

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Growth of dilute nitrides and 1.3 mu m edge emitting lasers on GaAs by MBE

Direct Observation of Lateral Carrier Diffusion in Ridge Waveguide InGaNAs Lasers

High-performance long-wavelength InGaAs/GaAs multiple quantum-well lasers grown by molecular beam epitaxy

Very low threshold current density 1.29 [micro sign]m GaInNAs triple quantum well lasers grown by MBE

Growth of GaInNAs and 1.3 μm edge emitting lasers by molecular beam epitaxy

Effects of Lateral Diffusion on the Temperature Sensitivity of the Threshold Current for 1.3- \mu} Double Quantum-Well GaInNAs-GaAs Lasers

The Martian Atmosphere as a Meteoroid Detector

Thermal performance investigation of DQW GaInNAs laser diodes

Frothing Phenomena in Phosphate Gangue Flotation from Magnetite Fines with Fatty Acid based Collector and MIBC Frother

Very-low-threshold current density 1.29 [micro sign]m GaInNAs triple quantum well lasers grown by molecular beam epitaxy

High-performance long-wavelength InGaAs/GaAs multiple quantum-well lasers grown by molecular beam epitaxy

Growth of dilute nitrides and 1.3 µm edge emitting lasers on GaAs by MBE

Direct Observation of Lateral Carrier Diffusion in Ridge Waveguide InGaNAs Lasers

Growth of dilute nitrides and 1.3 μm edge emitting lasers on GaAs by MBE : Novel Gain Materials Based on III-V-N Compounds

Growth of GaInNAs and 1.3 mum edge emitting lasers by molecular beam epitaxy

Very-low-threshold current density 1.29 µm GaInNAs triple quantum well lasers grown by molecular beam epitaxy

Very low threshold current density 1.29 µm GaInNAs triple quantum well lasers grown by MBE

Very-low-threshold current density 1.29 mu m GaInNAs triple quantum well lasers grown by molecular beam epitaxy

Very low threshold current density 1.29 mu m GaInNAs triple quantum well lasers grown by MBE

Very low threshold current density 1.29 μm GalnNAs triple quantum well lasers grown by MBE

Very-low-threshold current density 1.29 μm GalnNAs triple quantum well lasers grown by molecular beam epitaxy

Effects of Lateral Diffusion on the Temperature Sensitivity of the Threshold Current for 1.3-[mu{hbox {m}}] Double Quantum-Well GaInNAs-GaAs Lasers

Effects of Lateral Diffusion on the Temperature Sensitivity of the Threshold Current for 1.3- Double Quantum-Well GaInNAsaGaAs Lasers

Effects of Lateral Diffusion on the Temperature Sensitivity of the Threshold Current for 1.3-[Formula Omitted] Double Quantum-Well GaInNAs-GaAs Lasers

Static and dynamic performance optimisation of a 1.3 μm GaInNAs ridge waveguide laser

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