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Central, peripheral and resistance arterial reactivity: fluctuates during the phases of the menstrual cycle

Experimental biology and medicine (Maywood, N.J.), 2010-01, Vol.235 (1), p.111-118

2010

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A 90nm SiGe BiCMOS technology for mm-wave and high-performance analog applications

2014 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM), 2014, p.92-95

2014

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Reading the Stars: Age Bias in Morningstar Ratings

Financial analysts journal, 2003-09, Vol.59 (5), p.24-27

2003

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Understanding the Effects of Epitaxy Artifacts on SiGe HBT Performance through Detailed Process/Device Simulation

ECS transactions, 2013, Vol.50 (9), p.73-81

2013

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Overview of gate linewidth control in the manufacture of CMOS logic chips

IBM journal of research and development, 1995-01, Vol.39 (1.2), p.189-200

1995

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A Novel Approach to Isolating the Edge of the Shallow Trench Isolation in SiGe HBTs for Improved Device Performance

ECS transactions, 2014, Vol.64 (6), p.53-63

2014

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Improved Frequency Response in a SiGe npn Device through Improved Dopant Activation

ECS transactions, 2013, Vol.50 (9), p.83-93

2013

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Linewidth control effects on MOSFET ESD robustness

Microelectronics and reliability, 1998-01, Vol.38 (1), p.145-152

1998

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Total Dose and Transient Response of SiGe HBTs from a New 4th-Generation, 90 nm SiGe BiCMOS Technology

2012 IEEE Radiation Effects Data Workshop, 2012, p.1-5

2012

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Investigation of HBT layout impact on fT doubler performance for 90nm SiGe HBTs

2014 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM), 2014, p.5-8

2014

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A monolithic GaAs-on-Si receiver front end for optical interconnect systems

IEEE journal of solid-state circuits, 1993-06, Vol.28 (6), p.622-630

1993

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A half-micron CMOS logic generation

IBM journal of research and development, 1995-01, Vol.39 (1.2), p.215-227

1995

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Schottky Barrier Diodes in 90nm SiGe BiCMOS process operating near 2.0 THz cut-off frequency

2013 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM), 2013, p.73-76

2013

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A novel Ccb and Rb reduction technique for high-speed SiGe HBTs

2012 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM), 2012, p.1-4

2012

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A shell-like model for general purpose programming

ACM International Conference Proceeding Series, 2019, p.1-7

2019

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Plasma-induced gate-oxide charging issues for sub-0.5 μm complementary metal–oxide–semiconductor technologies

Journal of vacuum science & technology. A, Vacuum, surfaces, and films, 1995-05, Vol.13 (3), p.905-911

1995

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Influence of buffer layer thickness on DC performance of GaAs/AlGaAs heterojunction bipolar transistors grown on silicon substrates

IEEE electron device letters, 1988-12, Vol.9 (12), p.657-659

1988

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The effect of geographical deregulation on bank acquisition premiums

Journal of financial services research, 1990-07, Vol.4 (2), p.145-155

1990

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SiGe HBTs in 90nm BiCMOS technology demonstrating 300GHz/420GHz fT/fMAX through reduced Rb and Ccb parasitics

2013 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM), 2013, p.227-230

2013

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Modeling of U-shaped and plugged emitter resistance of high speed SiGe HBTs

2011 IEEE Bipolar/BiCMOS Circuits and Technology Meeting, 2011, p.154-157

2011

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Simple, fast, 2.5-V CMOS logic with 0.25- mu m channel lengths and damascene interconnect

Digest of technical papers - Symposium on VLSI Technology, 1994, p.85-86

1994

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The ‘first filers’: An examination of the first financial holding companies

Journal of banking regulation, 2003-06, Vol.4 (4), p.328-337

2003

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Picosecond photoconductivity in polycrystalline gallium arsenide grown by molecular beam epitaxy

Applied physics letters, 1993-03, Vol.62 (12), p.1382-1384

1993

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Charge pumping for DRAM retention diagnostic

1997 IEEE International Integrated Reliability Workshop Final Report (Cat. No.97TH8319), 1997, p.97-102

1997

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Processing and characterization of GaAs grown into recessed silicon

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1988-03, Vol.6 (2), p.717-719

1988

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Central, peripheral and resistance arterial reactivity: fluctuates during the phases of the menstrual cycle

A 90nm SiGe BiCMOS technology for mm-wave and high-performance analog applications

Reading the Stars: Age Bias in Morningstar Ratings

Understanding the Effects of Epitaxy Artifacts on SiGe HBT Performance through Detailed Process/Device Simulation

Overview of gate linewidth control in the manufacture of CMOS logic chips

A Novel Approach to Isolating the Edge of the Shallow Trench Isolation in SiGe HBTs for Improved Device Performance

Improved Frequency Response in a SiGe npn Device through Improved Dopant Activation

Linewidth control effects on MOSFET ESD robustness

Total Dose and Transient Response of SiGe HBTs from a New 4th-Generation, 90 nm SiGe BiCMOS Technology

Investigation of HBT layout impact on fT doubler performance for 90nm SiGe HBTs

A monolithic GaAs-on-Si receiver front end for optical interconnect systems

A half-micron CMOS logic generation

Schottky Barrier Diodes in 90nm SiGe BiCMOS process operating near 2.0 THz cut-off frequency

A novel Ccb and Rb reduction technique for high-speed SiGe HBTs

A shell-like model for general purpose programming

Plasma-induced gate-oxide charging issues for sub-0.5 μm complementary metal–oxide–semiconductor technologies

Influence of buffer layer thickness on DC performance of GaAs/AlGaAs heterojunction bipolar transistors grown on silicon substrates

The effect of geographical deregulation on bank acquisition premiums

SiGe HBTs in 90nm BiCMOS technology demonstrating 300GHz/420GHz fT/fMAX through reduced Rb and Ccb parasitics

Modeling of U-shaped and plugged emitter resistance of high speed SiGe HBTs

Simple, fast, 2.5-V CMOS logic with 0.25- mu m channel lengths and damascene interconnect

The ‘first filers’: An examination of the first financial holding companies

Picosecond photoconductivity in polycrystalline gallium arsenide grown by molecular beam epitaxy

Charge pumping for DRAM retention diagnostic

Processing and characterization of GaAs grown into recessed silicon

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