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Transport properties of SiO2/AlInN/AlN/GaN metal-oxide-semiconductor high electron mobility transistors on SiC substrate

Journal of physics. D, Applied physics, 2014-04, Vol.47 (13)

2014

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The 1.6-kV AlGaN/GaN HFETs

IEEE electron device letters, 2006-09, Vol.27 (9), p.716-718

2006

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IEEE_Xplore

Stable CW operation of field-plated GaN-AlGaN MOSHFETs at 19 W/mm

IEEE electron device letters, 2005-08, Vol.26 (8), p.535-537

2005

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IEEE_Xplore

High-efficiency 269 nm emission deep ultraviolet light-emitting diodes

Applied physics letters, 2004-06, Vol.84 (23), p.4762-4764

2004

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MOCVD growth of semipolar AlxGa1−xN on m-plane sapphire for applications in deep-ultraviolet light emitters

Physica status solidi. A, Applications and materials science, 2011-12, Vol.208 (12), p.2724-2729

2011

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Mechanism of current collapse removal in field-plated nitride HFETs

IEEE electron device letters, 2005-10, Vol.26 (10), p.704-706

2005

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IEEE_Xplore

Large periphery AlInN AlN GaN metal-oxide-semiconductor heterostructure field-effect transistors on sapphire substrate

Semiconductor science and technology, 2014-11, Vol.29 (11), p.115031

2014

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Silicon Dioxide-Encapsulated High-Voltage AlGaN/GaN HFETs for Power-Switching Applications

IEEE electron device letters, 2007-09, Vol.28 (9), p.784-786

2007

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IEEE_Xplore

Direct current performance and current collapse in AlGaN/GaN insulated gate high-electron mobility transistors on Si (1 1 1) substrate with very thin SiO2 gate dielectric

Semiconductor science and technology, 2012-12, Vol.27 (12)

2012

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Enhancement of light extraction efficiency in sub-300 nm nitride thin-film flip-chip light-emitting diodes

Solid-state electronics, 2013-11, Vol.89, p.156-160

2013

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Pulsed lateral epitaxial overgrowth of aluminum nitride on sapphire substrates

Applied physics letters, 2006-08, Vol.89 (8)

2006

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Self-heating effects at high pump currents in deep ultraviolet light-emitting diodes at 324 nm

Applied physics letters, 2002-10, Vol.81 (18), p.3491-3493

2002

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Submicron gate Si3N4/AlGaN/GaN-metal-insulator-semiconductor heterostructure field-effect transistors

IEEE electron device letters, 2003-09, Vol.24 (9), p.541-543

2003

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IEEE_Xplore

Thermal analysis of flip-chip packaged 280 nm nitride-based deep ultraviolet light-emitting diodes

Applied physics letters, 2005-05, Vol.86 (20), p.201109-201109-3

2005

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Temperature-Dependent RF Large-Signal Model of GaN-Based MOSHFETs

IEEE transactions on microwave theory and techniques, 2008-12, Vol.56 (12), p.2709-2716

2008

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IEEE_Xplore

Improved performance of 325-nm emission AlGaN ultraviolet light-emitting diodes

Applied physics letters, 2003-04, Vol.82 (16), p.2565-2567

2003

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AlGaN/GaN/AlGaN double heterostructure for high-power III-N field-effect transistors

Applied physics letters, 2003-06, Vol.82 (25), p.4593-4595

2003

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Indium–silicon co-doping of high-aluminum-content AlGaN for solar blind photodetectors

Applied physics letters, 2001-09, Vol.79 (12), p.1903-1905

2001

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High-power RF switching using III-nitride metal-oxide-semiconductor heterojunction capacitors

IEEE electron device letters, 2005-02, Vol.26 (2), p.56-58

2005

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IEEE_Xplore

Ultraviolet light-emitting diodes at 340 nm using quaternary AlInGaN multiple quantum wells

Applied physics letters, 2001-12, Vol.79 (25), p.4240-4242

2001

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Selectively Doped High-Power AlGaN/InGaN/GaN MOS-DHFET

IEEE electron device letters, 2007-03, Vol.28 (3), p.192-194

2007

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IEEE_Xplore

High-quality AlGaN layers over pulsed atomic-layer epitaxially grown AlN templates for deep ultraviolet light-emitting diodes

Journal of electronic materials, 2003-05, Vol.32 (5), p.364-370

2003

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Power Stability of AlGaN/GaN HFETs at 20 W/mm in the Pinched-Off Operation Mode

IEEE electron device letters, 2007-01, Vol.28 (1), p.5-7

2007

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IEEE_Xplore

Double-Recessed High-Frequency AlInGaN/InGaN/GaN Metal-Oxide Double Heterostructure Field-Effect Transistors

IEEE transactions on electron devices, 2008-02, Vol.55 (2), p.495-499

2008

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IEEE_Xplore

GaN/AlGaN p-channel inverted heterostructure JFET

IEEE electron device letters, 2002-08, Vol.23 (8), p.452-454

2002

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IEEE_Xplore

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Transport properties of SiO2/AlInN/AlN/GaN metal-oxide-semiconductor high electron mobility transistors on SiC substrate

The 1.6-kV AlGaN/GaN HFETs

Stable CW operation of field-plated GaN-AlGaN MOSHFETs at 19 W/mm

High-efficiency 269 nm emission deep ultraviolet light-emitting diodes

MOCVD growth of semipolar AlxGa1−xN on m-plane sapphire for applications in deep-ultraviolet light emitters

Mechanism of current collapse removal in field-plated nitride HFETs

Large periphery AlInN AlN GaN metal-oxide-semiconductor heterostructure field-effect transistors on sapphire substrate

Silicon Dioxide-Encapsulated High-Voltage AlGaN/GaN HFETs for Power-Switching Applications

Direct current performance and current collapse in AlGaN/GaN insulated gate high-electron mobility transistors on Si (1 1 1) substrate with very thin SiO2 gate dielectric

Enhancement of light extraction efficiency in sub-300 nm nitride thin-film flip-chip light-emitting diodes

Pulsed lateral epitaxial overgrowth of aluminum nitride on sapphire substrates

Self-heating effects at high pump currents in deep ultraviolet light-emitting diodes at 324 nm

Submicron gate Si3N4/AlGaN/GaN-metal-insulator-semiconductor heterostructure field-effect transistors

Thermal analysis of flip-chip packaged 280 nm nitride-based deep ultraviolet light-emitting diodes

Temperature-Dependent RF Large-Signal Model of GaN-Based MOSHFETs

Improved performance of 325-nm emission AlGaN ultraviolet light-emitting diodes

AlGaN/GaN/AlGaN double heterostructure for high-power III-N field-effect transistors

Indium–silicon co-doping of high-aluminum-content AlGaN for solar blind photodetectors

High-power RF switching using III-nitride metal-oxide-semiconductor heterojunction capacitors

Ultraviolet light-emitting diodes at 340 nm using quaternary AlInGaN multiple quantum wells

Selectively Doped High-Power AlGaN/InGaN/GaN MOS-DHFET

High-quality AlGaN layers over pulsed atomic-layer epitaxially grown AlN templates for deep ultraviolet light-emitting diodes

Power Stability of AlGaN/GaN HFETs at 20 W/mm in the Pinched-Off Operation Mode

Double-Recessed High-Frequency AlInGaN/InGaN/GaN Metal-Oxide Double Heterostructure Field-Effect Transistors

GaN/AlGaN p-channel inverted heterostructure JFET

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