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Substitutional synthesis of sub-nanometer InGaN/GaN quantum wells with high indium content

Scientific reports, 2021-10, Vol.11 (1), p.20606-20606, Article 20606

2021

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Nanofabrication of normally-off GaN vertical nanowire MESFETs

Nanotechnology, 2019-07, Vol.30 (28), p.285304-285304

2019

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InN: Breaking the limits of solid-state electronics

AIP advances, 2021-12, Vol.11 (12), p.125325-125325-5

2021

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In-situ SiNx/InN structures for InN field-effect transistors

Applied physics letters, 2016-04, Vol.108 (14)

2016

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Energy bandgap bowing of InAlN alloys studied by spectroscopic ellipsometry

Applied physics letters, 2008-05, Vol.92 (19), p.191907-191907-3

2008

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Current conduction mechanism and electrical break-down in InN grown on GaN

Applied physics letters, 2017-06, Vol.110 (23)

2017

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Selective-area growth of GaN nanowires on SiO2-masked Si (111) substrates by molecular beam epitaxy

Journal of applied physics, 2016-06, Vol.119 (22)

2016

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Analysis of current instabilities of thin AlN/GaN/AlN double heterostructure high electron mobility transistors

Semiconductor science and technology, 2016-04, Vol.31 (6), p.65002

2016

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Electron density and currents of AlN/GaN high electron mobility transistors with thin GaN/AlN buffer layer

Applied physics letters, 2014-09, Vol.105 (11), p.113508

2014

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Growth mechanism and microstructure of low defect density InN (0001) In-face thin films on Si (111) substrates

Journal of applied physics, 2013-10, Vol.114 (16)

2013

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The Critical Temperature of Superconducting Aluminum Films

Physics of metals and metallography, 2023, Vol.124 (1), p.53-57

2023

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Biaxial strain and lattice constants of InN (0001) films grown by plasma-assisted molecular beam epitaxy

Applied physics letters, 2006-05, Vol.88 (19)

2006

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Bandgap, electrical and structural properties of thick InN (0001) films grown under optimal conditions

Journal of physics. Conference series, 2019-05, Vol.1190 (1), p.12010

2019

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Elimination of surface band bending on N-polar InN with thin GaN capping

Applied physics letters, 2015-11, Vol.107 (19)

2015

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Direct spontaneous growth and interfacial structural properties of inclined GaN nanopillars on r -plane sapphire

Journal of applied physics, 2015-06, Vol.117 (24)

2015

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Mechanism of compositional modulations in epitaxial InAlN films grown by molecular beam epitaxy

Applied physics letters, 2009-07, Vol.95 (2)

2009

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GaN heterostructures with diamond and graphene

Semiconductor science and technology, 2015-11, Vol.30 (11), p.114001

2015

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Comparative study of AlN dielectric films’ electrical properties for MEMS capacitive switches

Microelectronic engineering, 2014-11, Vol.130, p.69-73

2014

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Active nitrogen species dependence on radiofrequency plasma source operating parameters and their role in GaN growth

Journal of crystal growth, 2005-05, Vol.278 (1), p.426-430

2005

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High electron mobility transistors based on the AlN/GaN heterojunction

Microelectronic engineering, 2009-04, Vol.86 (4), p.1071-1073

2009

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InGaN(0001) alloys grown in the entire composition range by plasma assisted molecular beam epitaxy

Physica status solidi. A, Applications and materials science, 2006-01, Vol.203 (1), p.102-105

2006

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InN films and nanostructures grown on Si (1 1 1) by RF-MBE

Journal of crystal growth, 2009-03, Vol.311 (7), p.2058-2062

2009

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Potassium selective chemically modified field effect transistors based on AlGaN/GaN two-dimensional electron gas heterostructures

Biosensors & bioelectronics, 2007-06, Vol.22 (12), p.2796-2801

2007

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Mechanism of Si outdiffusion in plasma-assisted molecular beam epitaxy of GaN on Si

Physica status solidi. C, 2013-01, Vol.10 (1), p.80-83

2013

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Surface electronic properties of undoped InAlN alloys

Applied physics letters, 2008-04, Vol.92 (17), p.172105-172105-3

2008

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Substitutional synthesis of sub-nanometer InGaN/GaN quantum wells with high indium content

Nanofabrication of normally-off GaN vertical nanowire MESFETs

InN: Breaking the limits of solid-state electronics

In-situ SiNx/InN structures for InN field-effect transistors

Energy bandgap bowing of InAlN alloys studied by spectroscopic ellipsometry

Current conduction mechanism and electrical break-down in InN grown on GaN

Selective-area growth of GaN nanowires on SiO2-masked Si (111) substrates by molecular beam epitaxy

Analysis of current instabilities of thin AlN/GaN/AlN double heterostructure high electron mobility transistors

Electron density and currents of AlN/GaN high electron mobility transistors with thin GaN/AlN buffer layer

Growth mechanism and microstructure of low defect density InN (0001) In-face thin films on Si (111) substrates

The Critical Temperature of Superconducting Aluminum Films

Biaxial strain and lattice constants of InN (0001) films grown by plasma-assisted molecular beam epitaxy

Bandgap, electrical and structural properties of thick InN (0001) films grown under optimal conditions

Elimination of surface band bending on N-polar InN with thin GaN capping

Direct spontaneous growth and interfacial structural properties of inclined GaN nanopillars on r -plane sapphire

Mechanism of compositional modulations in epitaxial InAlN films grown by molecular beam epitaxy

GaN heterostructures with diamond and graphene

Comparative study of AlN dielectric films’ electrical properties for MEMS capacitive switches

Active nitrogen species dependence on radiofrequency plasma source operating parameters and their role in GaN growth

High electron mobility transistors based on the AlN/GaN heterojunction

InGaN(0001) alloys grown in the entire composition range by plasma assisted molecular beam epitaxy

InN films and nanostructures grown on Si (1 1 1) by RF-MBE

Potassium selective chemically modified field effect transistors based on AlGaN/GaN two-dimensional electron gas heterostructures

Mechanism of Si outdiffusion in plasma-assisted molecular beam epitaxy of GaN on Si

Surface electronic properties of undoped InAlN alloys

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