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Total Dose Effects on Negative and Positive Low-Dropout Linear Regulators

IEEE transactions on nuclear science, 2020-07, Vol.67 (7), p.1332-1338

2020

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Improved Model for Excess Base Current in Irradiated Lateral p-n-p Bipolar Junction Transistors

IEEE transactions on nuclear science, 2018-08, Vol.65 (8), p.1488-1495

2018

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Multiscale Modeling of Total Ionizing Dose Effects in Commercial-off-the-Shelf Parts in Bipolar Technologies

IEEE transactions on nuclear science, 2019-01, Vol.66 (1), p.190-198

2019

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Digital Control for Radiation-Hardened Switching Converters in Space

IEEE transactions on aerospace and electronic systems, 2010-04, Vol.46 (2), p.761-770

2010

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Single Event-Induced Instability in Linear Voltage Regulators

IEEE transactions on nuclear science, 2006-12, Vol.53 (6), p.3506-3511

2006

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Investigations on heavy ion induced Single-Event Transients (SETs) in highly-scaled FinFETs

Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 2015-12, Vol.365, p.631-635

2015

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Total dose effects in a linear Voltage regulator

IEEE transactions on nuclear science, 2004-12, Vol.51 (6), p.3816-3821

2004

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Field Dependence of Charge Yield in Silicon Dioxide

IEEE transactions on nuclear science, 2014-12, Vol.61 (6), p.2818-2825

2014

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Study of a Thermal Annealing Approach for Very High Total Dose Environments

IEEE transactions on nuclear science, 2014-12, Vol.61 (6), p.2923-2929

2014

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Total-dose and single-event effects in switching DC/DC power converters

IEEE transactions on nuclear science, 2002-12, Vol.49 (6), p.3217-3221

2002

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Total-dose and single-event effects in DC/DC converter control circuitry

IEEE transactions on nuclear science, 2003-12, Vol.50 (6), p.1867-1872

2003

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System-level design hardening based on worst-case ASET Simulations

IEEE transactions on nuclear science, 2004-10, Vol.51 (5), p.2787-2793

2004

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Irradiation With Molecular Hydrogen as an Accelerated Total Dose Hardness Assurance Test Method for Bipolar Linear Circuits

IEEE transactions on nuclear science, 2009-12, Vol.56 (6), p.3326-3333

2009

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Modeling the Radiation Response of Fully-Depleted SOI n-Channel MOSFETs

IEEE transactions on nuclear science, 2009-08, Vol.56 (4), p.2247-2250

2009

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Radiation Effects in Power Systems: A Review

IEEE transactions on nuclear science, 2013-06, Vol.60 (3), p.1929-1952

2013

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Single event transient propagation through digital optocouplers

IEEE transactions on nuclear science, 2005-08, Vol.52 (4), p.1136-1139

2005

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Temperature dependence of bipolar junction transistor current-voltage characteristics after low dose rate irradiation

Microelectronics and reliability, 2020-10, Vol.113, p.113947, Article 113947

2020

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Comparison of Single Event Transients Generated at Four Pulsed-Laser Test Facilities-NRL, IMS, EADS, JPL

IEEE transactions on nuclear science, 2012-08, Vol.59 (4), p.988-998

2012

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Single-Event Transient Testing of Low Dropout PNP Series Linear Voltage Regulators

IEEE transactions on nuclear science, 2012-12, Vol.59 (6), p.2764-2771

2012

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The Effects of Hydrogen on the Enhanced Low Dose Rate Sensitivity (ELDRS) of Bipolar Linear Circuits

IEEE transactions on nuclear science, 2008-12, Vol.55 (6), p.3169-3173

2008

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Band-to-Band Tunneling (BBT) Induced Leakage Current Enhancement in Irradiated Fully Depleted SOI Devices

IEEE transactions on nuclear science, 2007-12, Vol.54 (6), p.2174-2180

2007

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Modeling Low Dose Rate Effects in Shallow Trench Isolation Oxides

IEEE transactions on nuclear science, 2011-12, Vol.58 (6), p.2945-2952

2011

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Single event transient effects in a voltage reference

Microelectronics and reliability, 2005-02, Vol.45 (2), p.355-359

2005

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An SET-Free, All-Digital Controlled Point-of-Load Regulator for Next-Generation Power Systems: ADC-POL

IEEE transactions on nuclear science, 2011-12, Vol.58 (6), p.3011-3017

2011

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Gate-Length and Drain-Bias Dependence of Band-to-Band Tunneling-Induced Drain Leakage in Irradiated Fully Depleted SOI Devices

IEEE transactions on nuclear science, 2008-12, Vol.55 (6), p.3259-3264

2008

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Total Dose Effects on Negative and Positive Low-Dropout Linear Regulators

Improved Model for Excess Base Current in Irradiated Lateral p-n-p Bipolar Junction Transistors

Multiscale Modeling of Total Ionizing Dose Effects in Commercial-off-the-Shelf Parts in Bipolar Technologies

Digital Control for Radiation-Hardened Switching Converters in Space

Single Event-Induced Instability in Linear Voltage Regulators

Investigations on heavy ion induced Single-Event Transients (SETs) in highly-scaled FinFETs

Total dose effects in a linear Voltage regulator

Field Dependence of Charge Yield in Silicon Dioxide

Study of a Thermal Annealing Approach for Very High Total Dose Environments

Total-dose and single-event effects in switching DC/DC power converters

Total-dose and single-event effects in DC/DC converter control circuitry

System-level design hardening based on worst-case ASET Simulations

Irradiation With Molecular Hydrogen as an Accelerated Total Dose Hardness Assurance Test Method for Bipolar Linear Circuits

Modeling the Radiation Response of Fully-Depleted SOI n-Channel MOSFETs

Radiation Effects in Power Systems: A Review

Single event transient propagation through digital optocouplers

Temperature dependence of bipolar junction transistor current-voltage characteristics after low dose rate irradiation

Comparison of Single Event Transients Generated at Four Pulsed-Laser Test Facilities-NRL, IMS, EADS, JPL

Single-Event Transient Testing of Low Dropout PNP Series Linear Voltage Regulators

The Effects of Hydrogen on the Enhanced Low Dose Rate Sensitivity (ELDRS) of Bipolar Linear Circuits

Band-to-Band Tunneling (BBT) Induced Leakage Current Enhancement in Irradiated Fully Depleted SOI Devices

Modeling Low Dose Rate Effects in Shallow Trench Isolation Oxides

Single event transient effects in a voltage reference

An SET-Free, All-Digital Controlled Point-of-Load Regulator for Next-Generation Power Systems: ADC-POL

Gate-Length and Drain-Bias Dependence of Band-to-Band Tunneling-Induced Drain Leakage in Irradiated Fully Depleted SOI Devices

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