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Defects in Two-Dimensional Materials

2022

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Defect-Dominated Doping and Contact Resistance in MoS2

ACS nano, 2014-03, Vol.8 (3), p.2880-2888

2014

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MoS2 functionalization for ultra-thin atomic layer deposited dielectrics

Applied physics letters, 2014-03, Vol.104 (11)

2014

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Defects and Surface Structural Stability of MoTe2 Under Vacuum Annealing

ACS nano, 2017-11, Vol.11 (11), p.11005-11014

2017

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Near-unity photoluminescence quantum yield in MoS2

Science (American Association for the Advancement of Science), 2015-11, Vol.350 (6264), p.1065-1068

2015

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Recombination Kinetics and Effects of Superacid Treatment in Sulfur- and Selenium-Based Transition Metal Dichalcogenides

Nano letters, 2016-04, Vol.16 (4), p.2786-2791

2016

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Monolayer graphene growth on Ni(111) by low temperature chemical vapor deposition

Applied physics letters, 2012-01, Vol.100 (2), p.021601-021601-3

2012

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Interface properties of CVD grown graphene transferred onto MoS2(0001)

Nanoscale, 2014-01, Vol.6 (2), p.1071-1078

2014

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Contact Metal–MoS2 Interfacial Reactions and Potential Implications on MoS2‑Based Device Performance

Journal of physical chemistry. C, 2016-07, Vol.120 (27), p.14719-14729

2016

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Hole Contacts on Transition Metal Dichalcogenides: Interface Chemistry and Band Alignments

ACS nano, 2014-06, Vol.8 (6), p.6265-6272

2014

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Atomically thin resonant tunnel diodes built from synthetic van der Waals heterostructures

Nature communications, 2015-06, Vol.6 (1), p.7311-7311, Article 7311

2015

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Tuning the Electronic and Photonic Properties of Monolayer MoS2 via In Situ Rhenium Substitutional Doping

Advanced functional materials, 2018-04, Vol.28 (16), p.n/a

2018

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New Mo6Te6 Sub‐Nanometer‐Diameter Nanowire Phase from 2H‐MoTe2

Advanced materials (Weinheim), 2017-05, Vol.29 (18), p.n/a

2017

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Using photoelectron spectroscopy in the integration of 2D materials for advanced devices

Journal of electron spectroscopy and related phenomena, 2019-02, Vol.231, p.94-103

2019

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HfSe2 Thin Films: 2D Transition Metal Dichalcogenides Grown by Molecular Beam Epitaxy

ACS nano, 2015-01, Vol.9 (1), p.474-480

2015

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Surface chemistry of 2-propanol and O2 mixtures on SnO2(110) studied with ambient-pressure x-ray photoelectron spectroscopy

The Journal of chemical physics, 2020-02, Vol.152 (5), p.054713-054713

2020

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Defects and Domain Boundaries in Self-Assembled Terephthalic Acid (TPA) Monolayers on CVD-Grown Graphene on Pt(111)

Langmuir, 2013-05, Vol.29 (21), p.6354-6360

2013

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Partially Fluorinated Graphene: Structural and Electrical Characterization

ACS applied materials & interfaces, 2016-02, Vol.8 (7), p.5002-5008

2016

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Enhancing Interconnect Reliability and Performance by Converting Tantalum to 2D Layered Tantalum Sulfide at Low Temperature

Advanced materials (Weinheim), 2019-07, Vol.31 (30), p.e1902397-n/a

2019

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Atomically Thin Heterostructures Based on Single-Layer Tungsten Diselenide and Graphene

Nano letters, 2014-12, Vol.14 (12), p.6936-6941

2014

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Electronic properties of MoS2/MoOx interfaces: Implications in Tunnel Field Effect Transistors and Hole Contacts

Scientific reports, 2016-09, Vol.6 (1), p.33562-33562, Article 33562

2016

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WSe2-contact metal interface chemistry and band alignment under high vacuum and ultra high vacuum deposition conditions

2d materials, 2017-06, Vol.4 (2)

2017

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Schottky Barrier Height of Pd/MoS2 Contact by Large Area Photoemission Spectroscopy

ACS applied materials & interfaces, 2017-11, Vol.9 (44), p.38977-38983

2017

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High-κ Dielectric on ReS2: In-Situ Thermal Versus Plasma-Enhanced Atomic Layer Deposition of Al2O3

Materials, 2019-03, Vol.12 (7), p.1056

2019

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Nucleation and growth of WSe2: enabling large grain transition metal dichalcogenides

2d materials, 2017-12, Vol.4 (4)

2017

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Defects in Two-Dimensional Materials

Defect-Dominated Doping and Contact Resistance in MoS2

MoS2 functionalization for ultra-thin atomic layer deposited dielectrics

Defects and Surface Structural Stability of MoTe2 Under Vacuum Annealing

Near-unity photoluminescence quantum yield in MoS2

Recombination Kinetics and Effects of Superacid Treatment in Sulfur- and Selenium-Based Transition Metal Dichalcogenides

Monolayer graphene growth on Ni(111) by low temperature chemical vapor deposition

Interface properties of CVD grown graphene transferred onto MoS2(0001)

Contact Metal–MoS2 Interfacial Reactions and Potential Implications on MoS2‑Based Device Performance

Hole Contacts on Transition Metal Dichalcogenides: Interface Chemistry and Band Alignments

Atomically thin resonant tunnel diodes built from synthetic van der Waals heterostructures

Tuning the Electronic and Photonic Properties of Monolayer MoS2 via In Situ Rhenium Substitutional Doping

New Mo6Te6 Sub‐Nanometer‐Diameter Nanowire Phase from 2H‐MoTe2

Using photoelectron spectroscopy in the integration of 2D materials for advanced devices

HfSe2 Thin Films: 2D Transition Metal Dichalcogenides Grown by Molecular Beam Epitaxy

Surface chemistry of 2-propanol and O2 mixtures on SnO2(110) studied with ambient-pressure x-ray photoelectron spectroscopy

Defects and Domain Boundaries in Self-Assembled Terephthalic Acid (TPA) Monolayers on CVD-Grown Graphene on Pt(111)

Partially Fluorinated Graphene: Structural and Electrical Characterization

Enhancing Interconnect Reliability and Performance by Converting Tantalum to 2D Layered Tantalum Sulfide at Low Temperature

Atomically Thin Heterostructures Based on Single-Layer Tungsten Diselenide and Graphene

Electronic properties of MoS2/MoOx interfaces: Implications in Tunnel Field Effect Transistors and Hole Contacts

WSe2-contact metal interface chemistry and band alignment under high vacuum and ultra high vacuum deposition conditions

Schottky Barrier Height of Pd/MoS2 Contact by Large Area Photoemission Spectroscopy

High-κ Dielectric on ReS2: In-Situ Thermal Versus Plasma-Enhanced Atomic Layer Deposition of Al2O3

Nucleation and growth of WSe2: enabling large grain transition metal dichalcogenides

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