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Improved Optoelectronic Properties of Rapid Thermally Annealed Dilute Nitride GaInNAs Photodetectors

Journal of electronic materials, 2012-12, Vol.41 (12), p.3393-3401

2012

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REDUCING INVENTORY HOLDING COSTS FOR CONSUMABLE ITEMS IN A LARGE STEELWORKS

South African journal of industrial engineering, 2012-01, Vol.7 (1)

2012

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Band-structure engineering in strained semiconductor lasers

IEEE journal of quantum electronics, 1994-02, Vol.30 (2), p.366-379

1994

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Direct measurement of facet temperature up to melting point and COD in high-power 980-nm semiconductor diode lasers

IEEE journal of selected topics in quantum electronics, 2003-09, Vol.9 (5), p.1325-1332

2003

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Band-structure engineering for low-threshold high-efficiency semiconductor lasers

Electronics letters, 1986-02, Vol.22 (5), p.249-250

ADAMS, A. R

1986

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Design and ASE characteristics of 1550-nm polarization-insensitive semiconductor optical amplifiers containing tensile and compressive wells

IEEE journal of quantum electronics, 2000-01, Vol.36 (1), p.118-122

2000

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Theoretical and experimental analysis of 1.3-μm InGaAsN/GaAs lasers

IEEE journal of selected topics in quantum electronics, 2003-09, Vol.9 (5), p.1228-1238

2003

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A quantitative study of radiative, Auger, and defect related recombination processes in 1.3-μm GaInNAs-based quantum-well lasers

IEEE journal of selected topics in quantum electronics, 2002-07, Vol.8 (4), p.801-810

2002

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Recombination processes in midinfrared InGaAsSb diode lasers emitting at 2.37μm

Applied physics letters, 2006-07, Vol.89 (5), p.051104.1-051104.3

2006

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Determination of the band structure of disordered AlGaInP and its influence on visible-laser characteristics

IEEE journal of selected topics in quantum electronics, 1995-06, Vol.1 (2), p.697-706

1995

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The temperature dependence of 1.3- and 1.5-μm compressively strained InGaAs(P) MQW semiconductor lasers

IEEE journal of selected topics in quantum electronics, 1999-05, Vol.5 (3), p.401-412

1999

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Strain-overcompensated GaInP-AlGaInP quantum-well laser structures for improved reliability at high-output powers

IEEE journal of selected topics in quantum electronics, 1997-04, Vol.3 (2), p.180-187

1997

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The role of auger recombination in inas 1.3-μm quantum-dot lasers investigated using high hydrostatic pressure

IEEE journal of selected topics in quantum electronics, 2003-09, Vol.9 (5), p.1300-1307

2003

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The Importance of Recombination via Excited States in InAs/GaAs [Formula Omitted]m Quantum-Dot Lasers

IEEE journal of selected topics in quantum electronics, 2009-05, Vol.15 (3), p.799

2009

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Band-structure engineering to control impact ionisation and related high-field processes

Electronics letters, 2004-08, Vol.40 (17), p.1086-1088

ADAMS, A. R

2004

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Recombination and loss mechanisms in low-threshold InAs-GaAs 1.3-/spl mu/m quantum-dot lasers

IEEE journal of selected topics in quantum electronics, 2005-09, Vol.11 (5), p.1041-1047

2005

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The Importance of Recombination via Excited States in InAs/GaAs $\hbox{1.3}\;\mu$m Quantum-Dot Lasers

IEEE journal of selected topics in quantum electronics, 2009, Vol.15 (3), p.799-807

2009

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InSb1−xNx growth and devices

Solid-state electronics, 2003-03, Vol.47 (3), p.387-394

2003

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The light-hole mass in a strained InGaAs/GaAs single quantum well and its pressure dependence

The Journal of physics and chemistry of solids, 1995-03, Vol.56 (3), p.469-473

1995

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The effect of temperature dependent processes on the performance of 1.5-μm compressively strained InGaAs(P) MQW semiconductor diode lasers

IEEE photonics technology letters, 1998-08, Vol.10 (8), p.1076-1078

1998

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Temperature and pressure dependence of the recombination processes in 1.5 µm InAs/InP(311)B quantum dot lasers

Applied physics letters, 2007, Vol.91 (13)

2007

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Carrier recombination mechanisms in mid-infrared GaInAsSb quantum well lasers

Physica Status Solidi (b), 2007-01, Vol.244 (1), p.203-207

2007

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The Importance of Recombination via Excited States in InAs/GaAs \hbox\;\mum Quantum-Dot Lasers

IEEE journal of selected topics in quantum electronics, 2009-05, Vol.15 (3), p.799-807

2009

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Recombination and loss mechanisms in low-threshold InAs-GaAs 1.3-[micro]m quantum-dot lasers

IEEE journal of selected topics in quantum electronics, 2005-09, Vol.11 (5), p.1041

2005

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High-pressure studies of recombination mechanisms in 1.3-[micro]m GaInNAs quantum-well lasers

IEEE journal of selected topics in quantum electronics, 2003-09, Vol.9 (5), p.1196

2003

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Improved Optoelectronic Properties of Rapid Thermally Annealed Dilute Nitride GaInNAs Photodetectors

REDUCING INVENTORY HOLDING COSTS FOR CONSUMABLE ITEMS IN A LARGE STEELWORKS

Band-structure engineering in strained semiconductor lasers

Direct measurement of facet temperature up to melting point and COD in high-power 980-nm semiconductor diode lasers

Band-structure engineering for low-threshold high-efficiency semiconductor lasers

Design and ASE characteristics of 1550-nm polarization-insensitive semiconductor optical amplifiers containing tensile and compressive wells

Theoretical and experimental analysis of 1.3-μm InGaAsN/GaAs lasers

A quantitative study of radiative, Auger, and defect related recombination processes in 1.3-μm GaInNAs-based quantum-well lasers

Recombination processes in midinfrared InGaAsSb diode lasers emitting at 2.37μm

Determination of the band structure of disordered AlGaInP and its influence on visible-laser characteristics

The temperature dependence of 1.3- and 1.5-μm compressively strained InGaAs(P) MQW semiconductor lasers

Strain-overcompensated GaInP-AlGaInP quantum-well laser structures for improved reliability at high-output powers

The role of auger recombination in inas 1.3-μm quantum-dot lasers investigated using high hydrostatic pressure

The Importance of Recombination via Excited States in InAs/GaAs [Formula Omitted]m Quantum-Dot Lasers

Band-structure engineering to control impact ionisation and related high-field processes

Recombination and loss mechanisms in low-threshold InAs-GaAs 1.3-/spl mu/m quantum-dot lasers

The Importance of Recombination via Excited States in InAs/GaAs $\hbox{1.3}\;\mu$m Quantum-Dot Lasers

InSb1−xNx growth and devices

The light-hole mass in a strained InGaAs/GaAs single quantum well and its pressure dependence

The effect of temperature dependent processes on the performance of 1.5-μm compressively strained InGaAs(P) MQW semiconductor diode lasers

Temperature and pressure dependence of the recombination processes in 1.5 µm InAs/InP(311)B quantum dot lasers

Carrier recombination mechanisms in mid-infrared GaInAsSb quantum well lasers

The Importance of Recombination via Excited States in InAs/GaAs \hbox\;\mum Quantum-Dot Lasers

Recombination and loss mechanisms in low-threshold InAs-GaAs 1.3-[micro]m quantum-dot lasers

High-pressure studies of recombination mechanisms in 1.3-[micro]m GaInNAs quantum-well lasers

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