UB Paderborn / Katalog / Suche / in CDI

1 – 25 von 83

Sortiert nach

Band gap of GaAs1−xBix, 0<x<3.6

Applied physics letters, 2003-06, Vol.82 (22), p.3874-3876

2003

Link zum Volltext

Verfügbarkeit prüfen

Molecular beam epitaxy growth of GaAs1−xBix

Applied physics letters, 2003-04, Vol.82 (14), p.2245-2247

2003

Link zum Volltext

Verfügbarkeit prüfen

Surfactant enhanced growth of GaNAs and InGaNAs using bismuth

Journal of crystal growth, 2003-04, Vol.251 (1), p.449-454

2003

Link zum Volltext

Verfügbarkeit prüfen

Evidence from the surface morphology for nonlinear growth of epitaxial GaAs films

Physical review letters, 2001-03, Vol.86 (11), p.2377-2380

2001

Link zum Volltext

Verfügbarkeit prüfen

Ultranarrow photoluminescence transitions of nitrogen cluster bound excitons in dilute GaAsN

Physical review. B, Condensed matter and materials physics, 2006-07, Vol.74 (3), Article 035208

2006

Link zum Volltext

Verfügbarkeit prüfen

Long wavelength GaAsP∕GaAs∕GaAsSb VCSELs on GaAs substrates for communications applications

Electronics letters, 2003-06, Vol.39 (13), p.987

2003

Link zum Volltext

Verfügbarkeit prüfen

Predicting GaAs surface shapes during MBE regrowth on patterned substrates

Journal of crystal growth, 2004-10, Vol.271 (1-2), p.13-21

2004

Link zum Volltext

Verfügbarkeit prüfen

Comparison of strain relaxation in InGaAsN and InGaAs thin films

Applied physics letters, 2002-06, Vol.80 (23), p.4357-4359

2002

Link zum Volltext

Verfügbarkeit prüfen

Effect of the starting surface on the morphology of MBE-grown GaAs

Materials science & engineering. B, Solid-state materials for advanced technology, 2000-06, Vol.75 (2), p.153-156

2000

Link zum Volltext

Verfügbarkeit prüfen

Near-infrared refractive index of thick, laterally oxidized AlGaAs cladding layers

Journal of lightwave technology, 2000-02, Vol.18 (2), p.199-202

2000

Link zum Volltext
IEEE_Xplore

Excitons bound to nitrogen pairs in GaAs as seen by photoluminescence of high spectral and spatial resolution

Physical review. B, Condensed matter and materials physics, 2007-09, Vol.76 (12), Article 125209

2007

Link zum Volltext

Verfügbarkeit prüfen

Diffusion studies of Ra and Pb in GaAs by the alpha-particle energy loss method

Journal of applied physics, 1998-12, Vol.84 (11), p.6003-6006

1998

Link zum Volltext

Verfügbarkeit prüfen

Film thickness and composition monitoring during growth by molecular beam epitaxy using alpha particle energy loss

Applied physics letters, 1998-06, Vol.72 (25), p.3288-3290

1998

Link zum Volltext

Verfügbarkeit prüfen

In situ real time monitoring of thickness and composition in MBE using alpha particle energy loss

Journal of crystal growth, 1999-05, Vol.201, p.26-30

1999

Link zum Volltext

Verfügbarkeit prüfen

Surface morphology of GaAs during molecular beam epitaxy growth: Comparison of experimental data with simulations based on continuum growth equations

Physical review. B, Condensed matter, 2002-05, Vol.65 (20), Article 205302

2002

Link zum Volltext

Verfügbarkeit prüfen

Bi-induced vibrational modes in GaAsBi

Superlattices and microstructures, 2005-06, Vol.37 (6), p.394-400

2005

Link zum Volltext

Verfügbarkeit prüfen

Molecular beam epitaxy growth of the dilute nitride GaAs1−xNx with a helical resonator plasma source

Journal of vacuum science & technology. A, Vacuum, surfaces, and films, 2007-07, Vol.25 (4), p.850-856

2007

Link zum Volltext

Verfügbarkeit prüfen

Molecular beam epitaxy growth of the dilute nitride Ga As 1 − x N x with a helical resonator plasma source

Journal of vacuum science & technology. A, Vacuum, surfaces, and films, 2007-07, Vol.25 (4), p.850-856

2007

Link zum Volltext

Verfügbarkeit prüfen

Speckle with soft X-rays: A demonstration

Synchrotron radiation news, 1998-09, Vol.11 (5), p.15-19

1998

Link zum Volltext

Verfügbarkeit prüfen

Kinetic roughening of GaAs(001) during thermal Cl 2 etching

Physical review. B, Condensed matter, 2002-04, Vol.65 (15), Article 155315

2002

Link zum Volltext

Verfügbarkeit prüfen

Long wavelength GaAsP/GaAs/GaAsSb VCSELs on GaAs substrates for communications applications

Electronics letters, 2003-06, Vol.39 (13), p.1-1

2003

Link zum Volltext

Verfügbarkeit prüfen

Faceting transition in epitaxial growth of dilute GaNAs films on GaAs

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 2001-07, Vol.19 (4), p.1417-1421

2001

Link zum Volltext

Verfügbarkeit prüfen

Coherent soft x-ray scattering from InP islands on a semiconductor substrate

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1999-07, Vol.17 (4), p.1728-1732

1999

Link zum Volltext

Verfügbarkeit prüfen

In situ real time monitoring of thickness and composition in MBE using alpha particle energy loss

Journal of crystal growth, 1999, Vol.201202, p.26-30

1999

Link zum Volltext

Verfügbarkeit prüfen

Tight-binding model for the x-ray absorption and emission spectra of dilute GaN x As 1 − x at the nitrogen K edge

Physical review. B, Condensed matter and materials physics, 2004-04, Vol.69 (15), Article 155210

2004

Link zum Volltext

Verfügbarkeit prüfen

1 – 25 von 83

Suche als RSS-Feed

Suchergebnisse filtern

Filter anzeigen

Nur zeigen

Geprüft (Peer-Review)
(38)
Mit Volltextzugriff
(82)

Publikationsform

Sprache

Erscheinungsjahr

n.n

Thema

Physics
(21)
Science & Technology
(21)
Physical Sciences
(19)
Physics, Applied
(15)
Technology
(13)
Canada
(11)
Materials Science
(10)
Demography
(9)
Fertility
(9)
Materials Science, Multidisciplinary
(8)
Physics, Condensed Matter
(6)
Condensed Matter Physics
(5)
Exact Sciences And Technology
(5)
Quebec
(5)
Demographic Research
(4)
Engineering
(4)
Engineering, Electrical & Electronic
(4)
Family
(4)
Gallium Arsenide
(4)
Marriage
(4)

15 weitere anzeigen...

Weniger anzeigen...

Menü

Weitere Dienste

Einstellungen

Band gap of GaAs1−xBix, 0<x<3.6

Molecular beam epitaxy growth of GaAs1−xBix

Surfactant enhanced growth of GaNAs and InGaNAs using bismuth

Evidence from the surface morphology for nonlinear growth of epitaxial GaAs films

Ultranarrow photoluminescence transitions of nitrogen cluster bound excitons in dilute GaAsN

Long wavelength GaAsP∕GaAs∕GaAsSb VCSELs on GaAs substrates for communications applications

Predicting GaAs surface shapes during MBE regrowth on patterned substrates

Comparison of strain relaxation in InGaAsN and InGaAs thin films

Effect of the starting surface on the morphology of MBE-grown GaAs

Near-infrared refractive index of thick, laterally oxidized AlGaAs cladding layers

Excitons bound to nitrogen pairs in GaAs as seen by photoluminescence of high spectral and spatial resolution

Diffusion studies of Ra and Pb in GaAs by the alpha-particle energy loss method

Film thickness and composition monitoring during growth by molecular beam epitaxy using alpha particle energy loss

In situ real time monitoring of thickness and composition in MBE using alpha particle energy loss

Surface morphology of GaAs during molecular beam epitaxy growth: Comparison of experimental data with simulations based on continuum growth equations

Bi-induced vibrational modes in GaAsBi

Molecular beam epitaxy growth of the dilute nitride GaAs1−xNx with a helical resonator plasma source

Molecular beam epitaxy growth of the dilute nitride Ga As 1 − x N x with a helical resonator plasma source

Speckle with soft X-rays: A demonstration

Kinetic roughening of GaAs(001) during thermal Cl 2 etching

Long wavelength GaAsP/GaAs/GaAsSb VCSELs on GaAs substrates for communications applications

Faceting transition in epitaxial growth of dilute GaNAs films on GaAs

Coherent soft x-ray scattering from InP islands on a semiconductor substrate

In situ real time monitoring of thickness and composition in MBE using alpha particle energy loss

Tight-binding model for the x-ray absorption and emission spectra of dilute GaN x As 1 − x at the nitrogen K edge

Suchergebnisse filtern