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Hydrogen passivation of silicon carbide by low-energy ion implantation

Applied physics letters, 1998-08, Vol.73 (7), p.945-947

1998

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Identification of bandgap states in semiconductors by transmutation of implanted radioactive tracers

Materials science forum, 1997-01, p.113-118

Achtziger, N

1997

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Radiotracer identification of a Ta-related deep level in 4H–SiC

Journal of applied physics, 2000-09, Vol.88 (6), p.3260-3265

2000

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Deep levels of tantalum in silicon carbide and incorporation during crystal growth

Applied physics letters, 2001-10, Vol.79 (15), p.2405-2407

2001

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Radiotracer investigation of a deep Be-related band gap state in 4H-SiC

Applied physics letters, 2001-08, Vol.79 (7), p.961-963

2001

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Band Gap States of Cr in the Lower Part of the SiC Band Gap

Materials science forum, 2001-01, Vol.353-356, p.471-474

2001

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Identification of a Br-correlated bandgap state in GaAs by radiotracer spectroscopy

Applied physics letters, 2003-11, Vol.83 (21), p.4333-4335

2003

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Passivation and reactivation of shallow level defects in p-CdTe after low-energy hydrogen implantation

Journal of crystal growth, 2000-06, Vol.214, p.979-982

2000

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Radiotracer investigation of deep Ga- and Zn-related band gap states in 6H–SiC

Applied physics letters, 1998-12, Vol.73 (25), p.3698-3699

1998

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Band gap states of V and Cr in 6H-silicon carbide

Applied physics. A, Materials science & processing, 1997-09, Vol.65 (3), p.329-331

1997

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Investigation of indium-defect pairs in CdTe by PAC spectroscopy

Journal of crystal growth, 1999-02, Vol.197 (3), p.576-580

1999

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Polytype Dependence of Transition Metal-Related Deep Levels in 4H-, 6H- and 15R-SiC

Materials science forum, 2002-04, Vol.389-393, p.573-576

2002

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Quantitative Modeling of Hydrogen Diffusion and Reactivation of H-Passivated Al-Acceptors in SiC

Materials science forum, 2001-01, Vol.353-356, p.331-334

2001

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Hydrogen in the Wide Bandgap Semiconductor Silicon Carbide

Physica scripta, 2004-01, Vol.2004, p.99

2004

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Recoil implantation of radioactive transition metals and their investigation in silicon by deep-level transient spectroscopy

Applied physics letters, 1995-05, Vol.66 (18), p.2370-2372

1995

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Radiotracer Identification of Ti, V and Cr Band Gap States in 4H- and 6H-SiC

Materials science forum, 1998-01, Vol.264-268, p.541-544

1998

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Reactivation of Hydrogen-Passivated Aluminum Acceptors in p-type SiC

Materials science forum, 2000-05, Vol.338-342, p.929-932

2000

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Tantalum and Tungsten in Silicon Carbide: Identification and Polytype Dependence of Deep Levels

Materials science forum, 2001-01, Vol.353-356, p.475-478

2001

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Photoluminescence and DLTS Measurements of 15MeV Erbium Implanted 6H and 4H SiC

Materials science forum, 2000-05, Vol.338-342, p.639-642

2000

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Investigations on implantation doping of wide-bandgap II-VI compounds using radioactive dopants

Journal of physics. D, Applied physics, 1999-02, Vol.32 (3), p.291-297

1999

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Mobility, Passivating Effect and Thermal Stability of Hydrogen in Silicon Carbide

Physica status solidi. B, Basic research, 1998-12, Vol.210 (2), p.395-399

1998

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Identification of deep bandgap states in 4H- and 6H-SiC by radio-tracer DLTS and PAC-spectroscopy

Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 1998-03, Vol.136, p.756-762

1998

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Complex formation at indium donors in p-CdTe

Journal of crystal growth, 1996-02, Vol.159 (1-4), p.372-375

1996

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Band gap states of Ti, V, and Cr in 4H–silicon carbide

Applied physics letters, 1997-07, Vol.71 (1), p.110-112

1997

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Formation of Passivated Layers in P-Type SiC by Low Energy Ion Implantation of Hydrogen

Materials science forum, 2000-05, Vol.338-342, p.933-936

2000

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Hydrogen passivation of silicon carbide by low-energy ion implantation

Identification of bandgap states in semiconductors by transmutation of implanted radioactive tracers

Radiotracer identification of a Ta-related deep level in 4H–SiC

Deep levels of tantalum in silicon carbide and incorporation during crystal growth

Radiotracer investigation of a deep Be-related band gap state in 4H-SiC

Band Gap States of Cr in the Lower Part of the SiC Band Gap

Identification of a Br-correlated bandgap state in GaAs by radiotracer spectroscopy

Passivation and reactivation of shallow level defects in p-CdTe after low-energy hydrogen implantation

Radiotracer investigation of deep Ga- and Zn-related band gap states in 6H–SiC

Band gap states of V and Cr in 6H-silicon carbide

Investigation of indium-defect pairs in CdTe by PAC spectroscopy

Polytype Dependence of Transition Metal-Related Deep Levels in 4H-, 6H- and 15R-SiC

Quantitative Modeling of Hydrogen Diffusion and Reactivation of H-Passivated Al-Acceptors in SiC

Hydrogen in the Wide Bandgap Semiconductor Silicon Carbide

Recoil implantation of radioactive transition metals and their investigation in silicon by deep-level transient spectroscopy

Radiotracer Identification of Ti, V and Cr Band Gap States in 4H- and 6H-SiC

Reactivation of Hydrogen-Passivated Aluminum Acceptors in p-type SiC

Tantalum and Tungsten in Silicon Carbide: Identification and Polytype Dependence of Deep Levels

Photoluminescence and DLTS Measurements of 15MeV Erbium Implanted 6H and 4H SiC

Investigations on implantation doping of wide-bandgap II-VI compounds using radioactive dopants

Mobility, Passivating Effect and Thermal Stability of Hydrogen in Silicon Carbide

Identification of deep bandgap states in 4H- and 6H-SiC by radio-tracer DLTS and PAC-spectroscopy

Complex formation at indium donors in p-CdTe

Band gap states of Ti, V, and Cr in 4H–silicon carbide

Formation of Passivated Layers in P-Type SiC by Low Energy Ion Implantation of Hydrogen

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