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High-Power High-Linearity Uni-Traveling-Carrier Photodiodes for Analog Photonic Links
IEEE photonics technology letters, 2008-02, Vol.20 (3), p.202-204
2008
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240-GHz Gain-Bandwidth Product Back-Side Illuminated AlInAs Avalanche Photodiodes
IEEE photonics technology letters, 2010-09, Vol.22 (18), p.1373-1375
2010
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Transmission of 16.4-bit/s Capacity Over 2550 km Using PDM QPSK Modulation Format and Coherent Receiver
Journal of lightwave technology, 2009-02, Vol.27 (3), p.153-157
2009
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High-Performance Uni-Traveling-Carrier Photodiodes With a New Collector Design
IEEE photonics technology letters, 2008-07, Vol.20 (13), p.1163-1165
2008
Open Access
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InGaAs Communication Photodiodes: From Low- to High-Power-Level Designs
IEEE photonics journal, 2010-06, Vol.2 (3), p.460-468
2010
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Thick Absorption Layer Uni-Traveling-Carrier Photodiodes With High Responsivity, High Speed, and High Saturation Power
IEEE photonics technology letters, 2009-04, Vol.21 (7), p.429-431
2009
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High performance evanescent edge coupled waveguide unitraveling-carrier photodiodes for >40-gb/s optical receivers
IEEE photonics technology letters, 2004-02, Vol.16 (2), p.584-586
2004
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Experimental and Theoretical Linearity Investigation of High-Power Unitraveling-Carrier Photodiodes
IEEE photonics technology letters, 2009-09, Vol.21 (17), p.1247-1249
2009
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180-GHz Gain-Bandwidth Product Back-Side-Illuminated GaInAs-AlInAs APDs
IEEE photonics technology letters, 2009-06, Vol.21 (11), p.712-714
2009
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Evanescently coupled photodiodes integrating a double-stage taper for 40-Gb/s applications-compared performance with side-illuminated photodiodes
Journal of lightwave technology, 2002-12, Vol.20 (12), p.2004-2014
2002
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High Responsivity and High Power UTC and MUTC GaInAs-InP Photodiodes
IEEE photonics technology letters, 2012-02, Vol.24 (4), p.318-320
2012
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Design and fabrication of a p-i-n photodiode with high responsivity and large alignment tolerances for 40-gb/s applications
IEEE photonics technology letters, 2006-02, Vol.18 (4), p.556-558
2006
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Optical Summation of RF Signals
IEEE transactions on microwave theory and techniques, 2007-02, Vol.55 (2), p.318-326
2007
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High Optical Power, High Gain and High Dynamic Range Directly Modulated Optical Link
Journal of lightwave technology, 2013-04, Vol.31 (8), p.1227-1233
2013
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Access and metro network convergence for flexible end-to-end network design [invited]
Journal of optical communications and networking, 2017-06, Vol.9 (6), p.524-535
2017
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A 10Gb/s APD-based linear burst-mode receiver with 31dB dynamic range for reach-extended PON systems
Optics express, 2012-12, Vol.20 (26), p.B462-B469
2012
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High Gain × Bandwidth Product Over 140-GHz Planar Junction AlInAs Avalanche Photodiodes
IEEE photonics technology letters, 2008-03, Vol.20 (6), p.455
2008
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High Gain x Bandwidth Product Over 140-GHz Planar Junction AlInAs Avalanche Photodiodes
IEEE photonics technology letters, 2008-03, Vol.20 (6), p.455-457
2008
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Monolithic Integration of a Semiconductor Optical Amplifier and a High-Speed Photodiode With Low Polarization Dependence Loss
IEEE photonics technology letters, 2012-06, Vol.24 (11), p.897-899
2012
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Carbon doping for the GaAs base layer of Heterojunction Bipolar Transistors in a production scale MOVPE reactor
Journal of crystal growth, 2000-12, Vol.221 (1), p.53-58
2000
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Impact of the Number of Channels on the Induced Nonlinear Distortions in Ultra-Wideband SOAs
2019 Optical Fiber Communications Conference and Exhibition (OFC), 2019, p.1-3
2019
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High performance InGaP/GaAs HBTs for mobile communications
Electronics letters, 2000-01, Vol.36 (12), p.1073-1074
2000
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High sensitivity 40 Gbit/s preamplified SOA-PIN/TIA receiver module for high speed PON
2014 The European Conference on Optical Communication (ECOC), 2014, p.1-3
2014
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First 100-nm Continuous-Band WDM Transmission System with 115Tb/s Transport over 100km Using Novel Ultra-Wideband Semiconductor Optical Amplifiers
2017 European Conference on Optical Communication (ECOC), 2017, p.1-3
2017
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Effect of high-temperature annealing on GaInP/GaAs HBT structures grown by LP-MOVPE
Journal of electronic materials, 2000-02, Vol.29 (2), p.205-209
2000
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