UB Paderborn / Katalog / Suche / in CDI

Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment, 1996-06, Vol.374 (3), p.408-412

1996

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Polarization of the induced THz emission of donors in silicon

Semiconductors (Woodbury, N.Y.), 2016-12, Vol.50 (12), p.1673-1677

2016

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Sources of Carbon Impurities in the Preparation of High-Purity Monoisotopic 28Si by a Hydride Method

Inorganic materials, 2018, Vol.54 (10), p.977-983

2018

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Terahertz lasers based on intracentre transitions of group V donors in uniaxially deformed silicon

Quantum electronics (Woodbury, N.Y.), 2015-01, Vol.45 (2), p.113-120

2015

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Formation of donors in germanium–silicon alloys implanted with hydrogen ions with different energies

Semiconductors (Woodbury, N.Y.), 2016-08, Vol.50 (8), p.1122-1124

2016

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Implantation defects and n-type doping in Ge and Ge rich SiGe

Thin solid films, 2008-11, Vol.517 (1), p.152-154

2008

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Epitaxially grown monoisotopic Si, Ge, and [Si.sub.1-x] [Ge.sub.x] alloy layers: production and some properties

Semiconductors (Woodbury, N.Y.), 2016-03, p.345

2016

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Determination of the nonequilibrium concentration of vacancies in silicon crystals by measuring the concentration of nickel atoms at lattice sites

Journal of experimental and theoretical physics, 2010-05, Vol.110 (5), p.769-774

2010

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Three-dimensional unsteady modeling analysis of silicon transport in melt during Cz growth of Ge1-xSix bulk crystals

Journal of crystal growth, 2007-05, Vol.303 (1), p.141-145

2007

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Interaction of iron with the local environment in SiGe alloys investigated with Laplace transform deep level spectroscopy

Physical review. B, Condensed matter and materials physics, 2006-11, Vol.74 (19), p.195204_1-8, Article 195204

2006

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Impurity-induced enhancement of parity-forbidden optical intracenter transitions of shallow donors in silicon

Relaxation of Coulomb States in Semiconductors Probed by FEL Radiation

Czochralski growth of Si- and Ge-rich SiGe single crystals

Lateral photovoltage scanning (LPS) method for the visualization of the solid–liquid interface of Si1−xGex single crystals

Excitation of intracenter terahertz radiation by plasma oscillations in electron–hole liquid

Feasibility study of the production of bulk stable Ge isotopes by the hydrogen plasma chemical reduction of fluorides

Si:P as a laboratory analogue for hydrogen on high magnetic field white dwarf stars

Magnesium-related shallow donor centers in silicon

Optical pumping and readout of bismuth hyperfine states in silicon for atomic clock applications

Ge composition dependence of the minority carrier lifetime in monocrystalline alloys of Si1-xGex

Can highly enriched 28Si reveal new things about old defects?

Vacancy-donor pairs and their formation in irradiated n-Si

Some challenging points in the identification of defects in floating-zone n-type silicon irradiated with 8 and 15 MeV protons

Evolution of real structure in Ge-Si mosaic crystals

Electrical properties of diluted n- and p-[Si.sub.1-x][Ge.sub.x] at small x

On the feasibility of employing gradient crystals for high resolution synchrotron optics

Polarization of the induced THz emission of donors in silicon

Sources of Carbon Impurities in the Preparation of High-Purity Monoisotopic 28Si by a Hydride Method

Terahertz lasers based on intracentre transitions of group V donors in uniaxially deformed silicon

Formation of donors in germanium–silicon alloys implanted with hydrogen ions with different energies

Implantation defects and n-type doping in Ge and Ge rich SiGe

Epitaxially grown monoisotopic Si, Ge, and [Si.sub.1-x] [Ge.sub.x] alloy layers: production and some properties

Determination of the nonequilibrium concentration of vacancies in silicon crystals by measuring the concentration of nickel atoms at lattice sites

Three-dimensional unsteady modeling analysis of silicon transport in melt during Cz growth of Ge1-xSix bulk crystals

Interaction of iron with the local environment in SiGe alloys investigated with Laplace transform deep level spectroscopy

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