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Comparison of MOS and Schottky W/Pt–GaN diodes for hydrogen detection

Sensors and actuators. B, Chemical, 2005-01, Vol.104 (2), p.232-236

2005

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Effect of Si Co Doping on Ferromagnetic Properties of GaGdN

Journal of electronic materials, 2007-04, Vol.36 (4), p.391-396

2007

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Comparison of Pt/GaN and Pt/4H-SiC gas sensors

Solid-state electronics, 2003-09, Vol.47 (9), p.1487-1490

2003

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GaN electronics for high power, high temperature applications

Materials science & engineering. B, Solid-state materials for advanced technology, 2001-05, Vol.82 (1), p.227-231

2001

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AlGaN/GaN-based diodes and gateless HEMTs for gas and chemical sensing

IEEE sensors journal, 2005-08, Vol.5 (4), p.677-680

2005

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Effects of defects and doping on wide band gap ferromagnetic semiconductors

Physica. B, Condensed matter, 2003-12, Vol.340-342, p.39-47

2003

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Effects of Sc2O3 and MgO passivation layers on the output power of AlGaN/GaN HEMTs

IEEE electron device letters, 2002-09, Vol.23 (9), p.505-507

2002

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Advances in wide bandgap materials for semiconductor spintronics

Materials science & engineering. R, Reports : a review journal, 2003-02, Vol.40 (4), p.137-168

2003

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Luminescence characteristics of Er-doped GaN semiconductor thin films

Journal of alloys and compounds, 2000-04, Vol.300, p.207-213

2000

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Wet chemical etching survey of III-nitrides

Solid-state electronics, 1997-12, Vol.41 (12), p.1947-1951

1997

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Gate breakdown characteristics of MgO/GaN MOSFETs

Solid-state electronics, 2003-09, Vol.47 (9), p.1597-1600

2003

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Influence of gate oxide thickness on Sc2O3/GaN MOSFETs

Solid-state electronics, 2003-10, Vol.47 (10), p.1757-1761

2003

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Schottky rectifiers fabricated on free-standing GaN substrates

Solid-state electronics, 2001-03, Vol.45 (3), p.405-410

2001

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Dry etching of GaN and related materials: comparison of techniques

IEEE journal of selected topics in quantum electronics, 1998-05, Vol.4 (3), p.557-563

1998

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Effect of N2 plasma treatments on dry etch damage in n- and p-type GaN

Solid-state electronics, 2001-03, Vol.45 (3), p.467-470

2001

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Comparison of plasma etch techniques for III–V nitrides

Solid-state electronics, 1998-12, Vol.42 (12), p.2259-2267

1998

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High-density plasma etch selectivity for the III–V nitrides

Solid-state electronics, 1998-12, Vol.42 (12), p.2269-2276

1998

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Demonstration of GaN MIS diodes by using AlN and Ga2O3(Gd2O3) as dielectrics

Solid-state electronics, 1998-12, Vol.42 (12), p.2177-2181

1998

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Growth of Tl-containing III–V materials by gas-source molecular beam epitaxy

Journal of crystal growth, 1998-06, Vol.188 (1), p.113-118

1998

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Novel insulators for gate dielectrics and surface passivation of GaN-based electronic devices

Materials science & engineering. R, Reports : a review journal, 2004-09, Vol.44 (6), p.151-184

2004

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Effect of Gd implantation on the structural and magnetic properties of GaN and AlN

Applied physics letters, 2006-01, Vol.88 (4)

2006

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Ferromagnetism in Mn- and Cr-implanted AlGaP

Solid-state electronics, 2003-09, Vol.47 (9), p.1549-1552

2003

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Low Energy Electron‐Enhanced Etching of GaN/Si in Hydrogen Direct Current Plasma

Journal of the Electrochemical Society, 1996-11, Vol.143 (11), p.L251-L253

1996

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Effect of Mn Concentration on the Structural, optical and Magnetic Properties of GaMnN

Applied physics letters, 2010-11, Vol.84 ((8) ; 02, 2004)

2010

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Implantation and redistribution of dopants and isolation species in GaN and related compounds

Solid-state electronics, 1995-07, Vol.38 (7), p.1329-1333

1995

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Comparison of MOS and Schottky W/Pt–GaN diodes for hydrogen detection

Effect of Si Co Doping on Ferromagnetic Properties of GaGdN

Comparison of Pt/GaN and Pt/4H-SiC gas sensors

GaN electronics for high power, high temperature applications

AlGaN/GaN-based diodes and gateless HEMTs for gas and chemical sensing

Effects of defects and doping on wide band gap ferromagnetic semiconductors

Effects of Sc2O3 and MgO passivation layers on the output power of AlGaN/GaN HEMTs

Advances in wide bandgap materials for semiconductor spintronics

Luminescence characteristics of Er-doped GaN semiconductor thin films

Wet chemical etching survey of III-nitrides

Gate breakdown characteristics of MgO/GaN MOSFETs

Influence of gate oxide thickness on Sc2O3/GaN MOSFETs

Schottky rectifiers fabricated on free-standing GaN substrates

Dry etching of GaN and related materials: comparison of techniques

Effect of N2 plasma treatments on dry etch damage in n- and p-type GaN

Comparison of plasma etch techniques for III–V nitrides

High-density plasma etch selectivity for the III–V nitrides

Demonstration of GaN MIS diodes by using AlN and Ga2O3(Gd2O3) as dielectrics

Growth of Tl-containing III–V materials by gas-source molecular beam epitaxy

Novel insulators for gate dielectrics and surface passivation of GaN-based electronic devices

Effect of Gd implantation on the structural and magnetic properties of GaN and AlN

Ferromagnetism in Mn- and Cr-implanted AlGaP

Low Energy Electron‐Enhanced Etching of GaN/Si in Hydrogen Direct Current Plasma

Effect of Mn Concentration on the Structural, optical and Magnetic Properties of GaMnN

Implantation and redistribution of dopants and isolation species in GaN and related compounds

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