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HfB2 and Hf-B-N hard coatings by chemical vapor deposition

Surface & coatings technology, 2006-06, Vol.200 (22-23), p.6629-6633

2006

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Tribological behavior of hafnium diboride thin films

Surface & coatings technology, 2006-12, Vol.201 (7), p.4317-4322

2006

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Field-directed sputter sharpening for tailored probe materials and atomic-scale lithography

Nature communications, 2012-07, Vol.3 (1), p.935-935, Article 935

2012

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Anomalously high thermal conductivity of amorphous Si deposited by hot-wire chemical vapor deposition

Physical review. B, Condensed matter and materials physics, 2010-03, Vol.81 (10), Article 104203

2010

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Growth Inhibitor To Homogenize Nucleation and Obtain Smooth HfB2 Thin Films by Chemical Vapor Deposition

Chemistry of materials, 2013-03, Vol.25 (5), p.662-667

2013

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Improved transparent conductive oxide/p +/i junction in amorphous silicon solar cells by tailored hydrogen flux during growth

Thin solid films, 2001-08, Vol.394 (1), p.48-62

2001

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Absence of an abrupt phase change from polycrystalline to amorphous in silicon with deposition temperature

Physical review letters, 2001-06, Vol.86 (24), p.5514-5517

2001

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Deposition of microcrystalline silicon: Direct evidence for hydrogen-induced surface mobility of Si adspecies

Journal of applied physics, 2001-01, Vol.89 (2), p.1463-1469

2001

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Plasma deposition of hydrogenated amorphous silicon : studies of the growth surface

Applied Physics A Solids and Surfaces, 1993-06, Vol.56 (6), p.493-512

ABELSON, J. R

1993

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Low-Temperature Polycrystalline Silicon Thin-Film Transistors and Circuits on Flexible Substrates

MRS bulletin, 2006-06, Vol.31 (6), p.461-465

2006

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Hydrogen-induced modification of the medium-range structural order in amorphous silicon films

Applied physics letters, 2005-12, Vol.87 (24)

2005

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Structural disorder induced in hydrogenated amorphous silicon by light soaking

Applied physics letters, 1998-11, Vol.73 (21), p.3093-3095

1998

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Conformal growth of low friction HfBxCy hard coatings

Thin solid films, 2015-10, Vol.592, p.182-188

2015

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Advantages of the “optical cavity substrate” for real time infrared spectroscopy of plasma–surface interactions

Journal of applied physics, 2002-04, Vol.91 (8), p.4840-4845

2002

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Highly conformal film growth by chemical vapor deposition. I. A conformal zone diagram based on kinetics

Journal of vacuum science & technology. A, Vacuum, surfaces, and films, 2009-09, Vol.27 (5), p.1235-1243

2009

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Highly conformal film growth by chemical vapor deposition. II. Conformality enhancement through growth inhibition

Journal of vacuum science & technology. A, Vacuum, surfaces, and films, 2009-09, Vol.27 (5), p.1244-1248

2009

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An amorphous silicon thin film transistor fabricated at 125 °C by dc reactive magnetron sputtering

Applied physics letters, 1997-01, Vol.70 (2), p.226-227

1997

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Dependence of the saturated light-induced defect density on macroscopic properties of hydrogenated amorphous silicon

Applied physics letters, 1990-10, Vol.57 (14), p.1440-1442

1990

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Hydrogen-surface reactions during the growth of hydrogenated amorphous silicon by reactive magnetron sputtering: A real time kinetic study by in situ infrared absorption

Journal of applied physics, 1995-06, Vol.77 (12), p.6247-6256

1995

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Medium-range order in amorphous silicon measured by fluctuation electron microscopy

Solar energy materials and solar cells, 2003-07, Vol.78 (1), p.85-113

2003

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Unexpected short- and medium-range atomic structure of sputtered amorphous silicon upon thermal annealing

Journal of applied physics, 2011-11, Vol.110 (9), p.096104-096104-3

2011

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Surface reaction probability in hydrogenated amorphous silicon growth

Journal of applied physics, 1994-09, Vol.76 (5), p.3123-3129

1994

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Hydrogen incorporation in the early stages of hydrogenated amorphous silicon deposition evaluated by real time infrared reflectance spectroscopy

Applied physics letters, 1993-07, Vol.63 (4), p.461-463

1993

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Growth Inhibitor To Homogenize Nucleation and Obtain Smooth HfB 2 Thin Films by Chemical Vapor Deposition

Chemistry of materials, 2013-03, Vol.25 (5), p.662-667

2013

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Iron redistribution and compensation mechanisms in semi-insulating Si-implanted InP

Journal of applied physics, 1989-02, Vol.65 (3), p.1009-1017

1989

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HfB2 and Hf-B-N hard coatings by chemical vapor deposition

Tribological behavior of hafnium diboride thin films

Field-directed sputter sharpening for tailored probe materials and atomic-scale lithography

Anomalously high thermal conductivity of amorphous Si deposited by hot-wire chemical vapor deposition

Growth Inhibitor To Homogenize Nucleation and Obtain Smooth HfB2 Thin Films by Chemical Vapor Deposition

Improved transparent conductive oxide/p +/i junction in amorphous silicon solar cells by tailored hydrogen flux during growth

Absence of an abrupt phase change from polycrystalline to amorphous in silicon with deposition temperature

Deposition of microcrystalline silicon: Direct evidence for hydrogen-induced surface mobility of Si adspecies

Plasma deposition of hydrogenated amorphous silicon : studies of the growth surface

Low-Temperature Polycrystalline Silicon Thin-Film Transistors and Circuits on Flexible Substrates

Hydrogen-induced modification of the medium-range structural order in amorphous silicon films

Structural disorder induced in hydrogenated amorphous silicon by light soaking

Conformal growth of low friction HfBxCy hard coatings

Advantages of the “optical cavity substrate” for real time infrared spectroscopy of plasma–surface interactions

Highly conformal film growth by chemical vapor deposition. I. A conformal zone diagram based on kinetics

Highly conformal film growth by chemical vapor deposition. II. Conformality enhancement through growth inhibition

An amorphous silicon thin film transistor fabricated at 125 °C by dc reactive magnetron sputtering

Dependence of the saturated light-induced defect density on macroscopic properties of hydrogenated amorphous silicon

Hydrogen-surface reactions during the growth of hydrogenated amorphous silicon by reactive magnetron sputtering: A real time kinetic study by in situ infrared absorption

Medium-range order in amorphous silicon measured by fluctuation electron microscopy

Unexpected short- and medium-range atomic structure of sputtered amorphous silicon upon thermal annealing

Surface reaction probability in hydrogenated amorphous silicon growth

Hydrogen incorporation in the early stages of hydrogenated amorphous silicon deposition evaluated by real time infrared reflectance spectroscopy

Growth Inhibitor To Homogenize Nucleation and Obtain Smooth HfB 2 Thin Films by Chemical Vapor Deposition

Iron redistribution and compensation mechanisms in semi-insulating Si-implanted InP

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