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MoS2 functionalization for ultra-thin atomic layer deposited dielectrics

Applied physics letters, 2014-03, Vol.104 (11)

2014

Volltextzugriff (PDF)

Near-unity photoluminescence quantum yield in MoS2

Science (American Association for the Advancement of Science), 2015-11, Vol.350 (6264), p.1065-1068

2015

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MoS2 P-type Transistors and Diodes Enabled by High Work Function MoOx Contacts

Nano letters, 2014-03, Vol.14 (3), p.1337-1342

2014

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Hole Selective MoOx Contact for Silicon Solar Cells

Nano letters, 2014-02, Vol.14 (2), p.967-971

2014

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Remote Plasma Oxidation and Atomic Layer Etching of MoS2

ACS applied materials & interfaces, 2016-07, Vol.8 (29), p.19119-19126

2016

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Hole Contacts on Transition Metal Dichalcogenides: Interface Chemistry and Band Alignments

ACS nano, 2014-06, Vol.8 (6), p.6265-6272

2014

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Improvement in top-gate MoS2 transistor performance due to high quality backside Al2O3 layer

Applied physics letters, 2017-07, Vol.111 (3)

2017

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HfO2 on MoS2 by Atomic Layer Deposition: Adsorption Mechanisms and Thickness Scalability

ACS nano, 2013-11, Vol.7 (11), p.10354-10361

2013

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Highly Scalable, Atomically Thin WSe2 Grown via Metal–Organic Chemical Vapor Deposition

ACS nano, 2015-02, Vol.9 (2), p.2080-2087

2015

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Air Stable p‑Doping of WSe2 by Covalent Functionalization

ACS nano, 2014-10, Vol.8 (10), p.10808-10814

2014

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HfSe2 Thin Films: 2D Transition Metal Dichalcogenides Grown by Molecular Beam Epitaxy

ACS nano, 2015-01, Vol.9 (1), p.474-480

2015

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Atomic Layer Deposition of a High‑k Dielectric on MoS2 Using Trimethylaluminum and Ozone

ACS applied materials & interfaces, 2014-08, Vol.6 (15), p.11834-11838

2014

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Partially Fluorinated Graphene: Structural and Electrical Characterization

ACS applied materials & interfaces, 2016-02, Vol.8 (7), p.5002-5008

2016

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In situ x-ray photoelectron spectroscopy and capacitance voltage characterization of plasma treatments for Al2O3/AlGaN/GaN stacks

Applied physics letters, 2014-07, Vol.105 (1)

2014

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Schottky Barrier Height of Pd/MoS2 Contact by Large Area Photoemission Spectroscopy

ACS applied materials & interfaces, 2017-11, Vol.9 (44), p.38977-38983

2017

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Al2O3 on WSe2 by ozone based atomic layer deposition: Nucleation and interface study

APL materials, 2017-08, Vol.5 (8), p.086108-086108-6

2017

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A comparative study of atomic layer deposition of Al2O3 and HfO2 on AlGaN/GaN

Journal of materials science. Materials in electronics, 2015-07, Vol.26 (7), p.4638-4643

2015

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Covalent Nitrogen Doping and Compressive Strain in MoS2 by Remote N2 Plasma Exposure

Nano letters, 2016-09, Vol.16 (9), p.5437-5443

2016

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Manganese Doping of Monolayer MoS 2 : The Substrate Is Critical

Nano letters, 2015-10, Vol.15 (10), p.6586-6591

2015

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Hole selective MoOx contact for silicon solar cells

Nano letters, 2014-02, Vol.14 (2), p.967

2014

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Manganese Doping of Monolayer MoS2: The Substrate Is Critical

Nano letters, 2015-10, Vol.15 (10), p.6586-6591

2015

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Impurities and Electronic Property Variations of Natural MoS2 Crystal Surfaces

ACS nano, 2015-09, Vol.9 (9), p.9124-9133

2015

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Realistic Metal–Graphene Contact Structures

ACS nano, 2014-01, Vol.8 (1), p.642-649

2014

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Al2O3 on Black Phosphorus by Atomic Layer Deposition: An in Situ Interface Study

ACS applied materials & interfaces, 2015-06, Vol.7 (23), p.13038-13043

2015

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Effects of annealing on top-gated MoS2 transistors with HfO2 dielectric

Journal of vacuum science and technology. B, Nanotechnology & microelectronics, 2017-01, Vol.35 (1)

2017

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MoS2 functionalization for ultra-thin atomic layer deposited dielectrics

Near-unity photoluminescence quantum yield in MoS2

MoS2 P-type Transistors and Diodes Enabled by High Work Function MoOx Contacts

Hole Selective MoOx Contact for Silicon Solar Cells

Remote Plasma Oxidation and Atomic Layer Etching of MoS2

Hole Contacts on Transition Metal Dichalcogenides: Interface Chemistry and Band Alignments

Improvement in top-gate MoS2 transistor performance due to high quality backside Al2O3 layer

HfO2 on MoS2 by Atomic Layer Deposition: Adsorption Mechanisms and Thickness Scalability

Highly Scalable, Atomically Thin WSe2 Grown via Metal–Organic Chemical Vapor Deposition

Air Stable p‑Doping of WSe2 by Covalent Functionalization

HfSe2 Thin Films: 2D Transition Metal Dichalcogenides Grown by Molecular Beam Epitaxy

Atomic Layer Deposition of a High‑k Dielectric on MoS2 Using Trimethylaluminum and Ozone

Partially Fluorinated Graphene: Structural and Electrical Characterization

In situ x-ray photoelectron spectroscopy and capacitance voltage characterization of plasma treatments for Al2O3/AlGaN/GaN stacks

Schottky Barrier Height of Pd/MoS2 Contact by Large Area Photoemission Spectroscopy

Al2O3 on WSe2 by ozone based atomic layer deposition: Nucleation and interface study

A comparative study of atomic layer deposition of Al2O3 and HfO2 on AlGaN/GaN

Covalent Nitrogen Doping and Compressive Strain in MoS2 by Remote N2 Plasma Exposure

Manganese Doping of Monolayer MoS 2 : The Substrate Is Critical

Hole selective MoOx contact for silicon solar cells

Manganese Doping of Monolayer MoS2: The Substrate Is Critical

Impurities and Electronic Property Variations of Natural MoS2 Crystal Surfaces

Realistic Metal–Graphene Contact Structures

Al2O3 on Black Phosphorus by Atomic Layer Deposition: An in Situ Interface Study

Effects of annealing on top-gated MoS2 transistors with HfO2 dielectric

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