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InP-based two-dimensional photonic crystal on silicon: In-plane Bloch mode laser

Applied physics letters, 2002-12, Vol.81 (27), p.5102-5104

2002

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InP dies transferred onto silicon substrate for optical interconnects application

Sensors and actuators. A. Physical., 2006-01, Vol.125 (2), p.411-414

2006

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The generic nature of the Smart-Cut® process for thin film transfer

Journal of electronic materials, 2001-07, Vol.30 (7), p.834-840

2001

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Two-dimensional hexagonal-shaped microcavities formed in a two-dimensional photonic crystal on an InP membrane

Journal of applied physics, 2003-01, Vol.93 (1), p.23-31

2003

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InP 2D photonic crystal microlasers on silicon wafer: Room temperature operation at 1.55 mu m

Electronics letters, 2001-06, Vol.37 (12), p.764-766

2001

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Transfer of 3 in GaAs film on silicon substrate by proton implantation process

Electronics letters, 1998-02, Vol.34 (4), p.408

1998

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Basic mechanisms involved in the Smart-Cut ® process

Microelectronic engineering, 1997-06, Vol.36 (1), p.233-240

1997

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InP microdisk lasers on silicon wafer: CW room temperature operation at 1.6 mu m

Electronics letters, 2001-02, Vol.37 (4), p.222-223

2001

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Modal analysis and engineering on InP-based two-dimensional photonic-crystal microlasers on a Si wafer

IEEE journal of quantum electronics, 2003-03, Vol.39 (3), p.419-425

2003

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IEEE_Xplore

Point defect generation during high temperature annealing of the Si-SiO2 interface

Applied physics letters, 1993-11, Vol.63 (21), p.2926-2928

1993

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Kinetic aspects of the growth of hydrogen induced platelets in SiC

Journal of applied physics, 2000-06, Vol.87 (12), p.8415-8419

2000

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Raman microstructural analysis of silicon-on-insulator formed by high dose oxygen ion implantation: As-implanted structures

Journal of applied physics, 1997-10, Vol.82 (8), p.3730-3735

1997

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X-ray reflectivity of ultrathin twist-bonded silicon wafers

Applied physics letters, 1999-11, Vol.75 (22), p.3509-3511

1999

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Ultra thin silicon films directly bonded onto silicon wafers

Materials science & engineering. B, Solid-state materials for advanced technology, 2000-04, Vol.73 (1), p.42-46

2000

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New layer transfers obtained by the SmartCut process

Journal of electronic materials, 2003-08, Vol.32 (8), p.829-835

2003

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Transfer of structured and patterned thin silicon films using the Smart-Cut® process

Electronics letters, 1996-10, Vol.32 (21), p.1985

1996

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Wafer bonding and H-implantation mechanisms involved in the Smart-cut ® technology

Materials science & engineering. B, Solid-state materials for advanced technology, 1997-04, Vol.46 (1), p.14-19

1997

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O interstitial generation and diffusion in high temperature annealed Si/SiO2/Si structures

Journal of applied physics, 1996-03, Vol.79 (5), p.2302-2308

1996

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Smart-Cut® process using metallic bonding: Application to transfer of Si, GaAs, InP thin films

Electronics letters, 1999-06, Vol.35 (12), p.1024-1025

1999

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Morphological properties of chemical vapour deposited AlN films

Journal of crystal growth, 1993-10, Vol.133 (1), p.59-70

1993

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InP based photonic crystal microlasers on silicon wafer

Physica. E, Low-dimensional systems & nanostructures, 2003-04, Vol.17, p.475-476

2003

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Nanometric patterning with ultrathin twist bonded silicon wafers

Thin solid films, 2000-12, Vol.380 (1), p.10-14

2000

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Wafer stacking: key technology for 3D integration

2009 IEEE International SOI Conference, 2009, p.1-4

2009

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IEEE_Xplore

Smart-cut : A new silicon on insulator material technology based on hydrogen implantation and wafer bonding

Japanese journal of applied physics, 1997-03, Vol.36 (3B), p.1636-1641

1997

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High-frequency surface acoustic waves excited on thin-oriented LiNbO3 single-crystal layers transferred onto silicon

IEEE transactions on ultrasonics, ferroelectrics, and frequency control, 2007-04, Vol.54 (4), p.870-876

2007

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InP-based two-dimensional photonic crystal on silicon: In-plane Bloch mode laser

InP dies transferred onto silicon substrate for optical interconnects application

The generic nature of the Smart-Cut® process for thin film transfer

Two-dimensional hexagonal-shaped microcavities formed in a two-dimensional photonic crystal on an InP membrane

InP 2D photonic crystal microlasers on silicon wafer: Room temperature operation at 1.55 mu m

Transfer of 3 in GaAs film on silicon substrate by proton implantation process

Basic mechanisms involved in the Smart-Cut ® process

InP microdisk lasers on silicon wafer: CW room temperature operation at 1.6 mu m

Modal analysis and engineering on InP-based two-dimensional photonic-crystal microlasers on a Si wafer

Point defect generation during high temperature annealing of the Si-SiO2 interface

Kinetic aspects of the growth of hydrogen induced platelets in SiC

Raman microstructural analysis of silicon-on-insulator formed by high dose oxygen ion implantation: As-implanted structures

X-ray reflectivity of ultrathin twist-bonded silicon wafers

Ultra thin silicon films directly bonded onto silicon wafers

New layer transfers obtained by the SmartCut process

Transfer of structured and patterned thin silicon films using the Smart-Cut® process

Wafer bonding and H-implantation mechanisms involved in the Smart-cut ® technology

O interstitial generation and diffusion in high temperature annealed Si/SiO2/Si structures

Smart-Cut® process using metallic bonding: Application to transfer of Si, GaAs, InP thin films

Morphological properties of chemical vapour deposited AlN films

InP based photonic crystal microlasers on silicon wafer

Nanometric patterning with ultrathin twist bonded silicon wafers

Wafer stacking: key technology for 3D integration

Smart-cut : A new silicon on insulator material technology based on hydrogen implantation and wafer bonding

High-frequency surface acoustic waves excited on thin-oriented LiNbO3 single-crystal layers transferred onto silicon

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