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Annealing with Ni for ohmic contact formation on ICP-etched p-GaN

Electronics letters, 2008-01, Vol.44 (2), p.155-157

2008

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Preparation and properties of CuInxGa1−xSe2 thin-film solar cell absorbers from selenization of Ga-rich electrodeposited precursors

Semiconductor science and technology, 2009-07, Vol.24 (7), p.075015-075015 (6)

2009

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Influence of undoped GaN layer thickness to the performance of AlGaN/GaN-based ultraviolet light-emitting diodes

Journal of crystal growth, 2004-07, Vol.268 (1), p.30-34

2004

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Field isolation for GaN MOSFETs on AlGaN GaN heterostructure with boron ion implantation

Semiconductor science and technology, 2014-05, Vol.29 (5), p.55002

2014

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Fabrication of high performance of AlGaN/GaN-based UV light-emitting diodes

Journal of crystal growth, 2002-02, Vol.235 (1), p.177-182

2002

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GaN MOSFET with Boron Trichloride-Based Dry Recess Process

Journal of physics. Conference series, 2013-01, Vol.441 (1), p.12025-6

2013

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1 mW AlInGaN-based ultraviolet light-emitting diode with an emission wavelength of 348 nm grown on sapphire substrate

Applied physics letters, 2002-09, Vol.81 (14), p.2508-2510

2002

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Metal/Al-doped ZnO ohmic contact for AlGaN/GaN high electron mobility transistor

Applied physics letters, 2004-05, Vol.84 (20), p.3996-3998

2004

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Tyrosine Kinase Pyk2 is Involved in Colonic Smooth Muscle Contraction via the RhoA/ROCK Pathway

Physiological research, 2019-01, Vol.68 (1), p.89-98

2019

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Effect of strain relaxation and exciton localization on performance of 350-nm AlInGaN quaternary light-emitting diodes

Journal of applied physics, 2005-04, Vol.97 (8)

2005

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Gate leakage and electrical performance of AlGaN/GaN MIS-type HFET with evaporated silicon oxide layer

Solid-state electronics, 2006-03, Vol.50 (3), p.316-321

2006

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High-Performance 348 nm AlGaN/GaN-Based Ultraviolet-Light-Emitting Diode with a SiN Buffer Layer

Japanese Journal of Applied Physics, 2002, Vol.41 (Part 1, No. 7A), p.4450-4453

2002

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Highly improved performance of a 350 nm ultraviolet light-emitting diode containing AlxGa1-xN/AlyGa1-yN distributed Bragg reflectors

Journal of crystal growth, 2004-07, Vol.267 (3-4), p.583-587

2004

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Growth and characterization of CuInSe2 thin films via one-step electrodeposition from a lactic acid/sodium lactate buffer system

Materials chemistry and physics, 2009-06, Vol.115 (2-3), p.516-520

2009

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Schottky Barrier Height Determination by Capacitance-Voltage Measurement on n-GaN with Exponential Doping Profile

Japanese Journal of Applied Physics, 2004-07, Vol.43 (7R), p.4159-4160

2004

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Surface Dependence of pH Sensors on AlGaN/GaN Heterostructure

ECS transactions, 2014, Vol.61 (19), p.65-71

2014

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AlGaN/GaN High Electron Mobility Transistor with Thin Buffer Layers

Japanese Journal of Applied Physics, 2003, Vol.42 (Part 1, No. 4A), p.1588-1589

2003

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Annealing with Ni for ohmic contact formation on ICP-etched p-GaN

Electronics letters, 2008-01, Vol.44 (2), p.1-1

2008

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Fabrication of High-Output-Power AlGaN/GaN-Based UV-Light-Emitting Diode Using a Ga Droplet Layer

Japanese Journal of Applied Physics, 2002-10, Vol.41 (10A), p.L1037-L1039

2002

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Thermal stability investigation of copper-gate AlGaN/GaN high electron mobility transistors

Physica status solidi. C, 2003-12 (7), p.2376-2379

2003

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Growth and characterization of CuInSe@d2 thin films via one-step electrodeposition from a lactic acid/sodium lactate buffer system

Materials chemistry and physics, 2009-06, Vol.115 (2-3), p.516-520

2009

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Preparation and properties of CuIn x Ga 1− x Se 2 thin-film solar cell absorbers from selenization of Ga-rich electrodeposited precursors

Semiconductor science and technology, 2009-07, Vol.24 (7), p.75015

2009

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Copper gate AlGaN/GaN HEMT with low gate leakage current

IEEE electron device letters, 2003-08, Vol.24 (8), p.500-502

2003

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NMR relaxation study of molecular dynamics in columnar and smectic phases of a PAMAM liquid-crystalline co-dendrimer

The European physical journal. E, Soft matter and biological physics, 2005-10, Vol.18 (2), p.149-158

2005

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Effect of strain relaxation and exciton localization on performanceof 350 - nm AlInGaN quaternary light-emitting diodes

Journal of applied physics, 2005-04, Vol.97 (8), p.083104-083104-4

2005

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Annealing with Ni for ohmic contact formation on ICP-etched p-GaN

Preparation and properties of CuInxGa1−xSe2 thin-film solar cell absorbers from selenization of Ga-rich electrodeposited precursors

Influence of undoped GaN layer thickness to the performance of AlGaN/GaN-based ultraviolet light-emitting diodes

Field isolation for GaN MOSFETs on AlGaN GaN heterostructure with boron ion implantation

Fabrication of high performance of AlGaN/GaN-based UV light-emitting diodes

GaN MOSFET with Boron Trichloride-Based Dry Recess Process

1 mW AlInGaN-based ultraviolet light-emitting diode with an emission wavelength of 348 nm grown on sapphire substrate

Metal/Al-doped ZnO ohmic contact for AlGaN/GaN high electron mobility transistor

Tyrosine Kinase Pyk2 is Involved in Colonic Smooth Muscle Contraction via the RhoA/ROCK Pathway

Effect of strain relaxation and exciton localization on performance of 350-nm AlInGaN quaternary light-emitting diodes

Gate leakage and electrical performance of AlGaN/GaN MIS-type HFET with evaporated silicon oxide layer

High-Performance 348 nm AlGaN/GaN-Based Ultraviolet-Light-Emitting Diode with a SiN Buffer Layer

Highly improved performance of a 350 nm ultraviolet light-emitting diode containing AlxGa1-xN/AlyGa1-yN distributed Bragg reflectors

Growth and characterization of CuInSe2 thin films via one-step electrodeposition from a lactic acid/sodium lactate buffer system

Schottky Barrier Height Determination by Capacitance-Voltage Measurement on n-GaN with Exponential Doping Profile

Surface Dependence of pH Sensors on AlGaN/GaN Heterostructure

AlGaN/GaN High Electron Mobility Transistor with Thin Buffer Layers

Annealing with Ni for ohmic contact formation on ICP-etched p-GaN

Fabrication of High-Output-Power AlGaN/GaN-Based UV-Light-Emitting Diode Using a Ga Droplet Layer

Thermal stability investigation of copper-gate AlGaN/GaN high electron mobility transistors

Growth and characterization of CuInSe@d2 thin films via one-step electrodeposition from a lactic acid/sodium lactate buffer system

Preparation and properties of CuIn x Ga 1− x Se 2 thin-film solar cell absorbers from selenization of Ga-rich electrodeposited precursors

Copper gate AlGaN/GaN HEMT with low gate leakage current

NMR relaxation study of molecular dynamics in columnar and smectic phases of a PAMAM liquid-crystalline co-dendrimer

Effect of strain relaxation and exciton localization on performanceof 350 - nm AlInGaN quaternary light-emitting diodes

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