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Degradation and Its Control of Ultraviolet Avalanche Photodiodes Using PEDOT:PSS/ZnSSe Organic–Inorganic Hybrid Structure

Journal of electronic materials, 2018-08, Vol.47 (8), p.4385-4387

2018

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Development of ZnSe-based organic-inorganic hybrid UV-APDs array

Physica status solidi. C, 2016-07, Vol.13 (7-9), p.677-682

2016

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Quantum confined Stark effect of polar and non-polar ZnO/ZnMgO quantum wells grown by MBE

Physica status solidi. C, 2016-07, Vol.13 (7-9), p.602-605

2016

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Low dark current and stable ultraviolet avalanche photodiode of organic (PEDOT:PSS)-inorganic (ZnSSe) hybrid junction structure

Physica status solidi. C, 2014-07, Vol.11 (7-8), p.1300-1303

2014

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New ultraviolet avalanche photodiodes (APDs) of organic (PEDOT: PSS)-inorganic (ZnSSe) hybrid structure

Physica status solidi. C, 2012-08, Vol.9 (8-9), p.1852-1855

2012

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Influence of residual oxygen impurity in quaternary InAlGaN multiple-quantum-well active layers on emission efficiency of ultraviolet light-emitting diodes on GaN substrates

Journal of applied physics, 2006-06, Vol.99 (11)

2006

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Recombination enhanced defect reactions in 1 MeV electron irradiated p InGaP

Journal of applied physics, 2001-04, Vol.89 (8), p.4263-4268

2001

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High Gain and High Sensitive Blue-Ultraviolet Avalanche Photodiodes (APDs) of ZnSSe n + -i-p Structure Molecular Beam Epitaxy (MBE) Grown on p-type GaAs Substrates

Japanese Journal of Applied Physics, 2005-01, Vol.44 (4L), p.L508

2005

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Plant Growth under High Power Operation of White-Light-Emitting-Diodes by Operating-Current-Pulse-Width Control

Journal of the Society of Materials Science, Japan, 2018/09/15, Vol.67(9), pp.834-839

2018

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Growth mechanisms of ZnO(0001) investigated using the first-principles calculation

Journal of applied physics, 2012-09, Vol.112 (6)

2012

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Deep level analysis of radiation-induced defects in Si crystals and solar cells

Journal of applied physics, 1999-07, Vol.86 (1), p.217-223

1999

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Stable avalanche-photodiode operation of ZnSe-based p+–n structure blue-ultraviolet photodetectors

Applied physics letters, 2000-02, Vol.76 (8), p.1069-1071

2000

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Epitaxial growth of ZnO crystal on the Si-terminated 6H-SiC(0001) surface using the first-principles calculation

e-Journal of Surface Science and Nanotechnology, 2006, Vol.4, pp.254-257

2006

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Theoretical investigation on the structural properties of ZnO grown on sapphire

e-Journal of Surface Science and Nanotechnology, 2006, Vol.4, pp.544-547

2006

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Slow mode degradation mechanism of ZnSe based white LEDs

Physica Status Solidi (b), 2004-03, Vol.241 (3), p.751-758

2004

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Persistent Photoconductivity (PPC) and Related Deep Metastable Center in MBE Grown p-Type ZnMgSSe

Japanese Journal of Applied Physics, 1998, Vol.37 (3S), p.1453

1998

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Deep Level Transient Spectroscopy Analysis of 10 MeV Proton and 1 MeV Electron Irradiation-Induced Defects in p-InGaP and InGaP-based Solar Cells

Japanese Journal of Applied Physics, 2002, Vol.41 (Part 1, No. 3A), p.1241-1246

2002

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Optimization of ZnSe/ZnTe superlattice structured p-contact for ZnSe-based optical devices

Journal of crystal growth, 2000-06, Vol.214, p.492-496

2000

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Image Instrumentation: LIghts, Cameras, and Leses

Journal of the Visualization Society of Japan, 2006/10/01, Vol.26(103), pp.283-294

ANDO, Koshi

2006

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Demonstration of blue-ultraviolet avalanche photo-diodes of II–VI wide bandgap compounds grown by MBE

Journal of crystal growth, 2000-06, Vol.214, p.1134-1137

2000

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白色発光ダイオードの駆動電流パルス幅制御による高出力動作を用いた植物栽培

材料, 2018/09/15, Vol.67(9), pp.834-839

2018

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Efficient and Long-Lived Green Light-Emitting Diodes Based on ZnSSe:Te Active Layer

Japanese Journal of Applied Physics, 2002, Vol.41 (Part 1, No. 3A), p.1359-1364

2002

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High sensitive ultraviolet organic-inorganic hybrid photodetectors on ZnSSe grown on p-GaAs with transparent conducting polymer window-layer

Physica status solidi. C, 2010-06, Vol.7 (6), p.1706-1708

2010

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Analysis of GaAs/SiN interface states and hot carrier annealing effects in GaAs MESFET

Applied surface science, 1997-06, Vol.117, p.729-734

1997

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Light Sources on Flow Visualization Photography and Videography(2)

Journal of the Visualization Society of Japan, 1997/01/05, Vol.17(64), pp.28-34_1

ANDO, Koshi

1997

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Degradation and Its Control of Ultraviolet Avalanche Photodiodes Using PEDOT:PSS/ZnSSe Organic–Inorganic Hybrid Structure

Development of ZnSe-based organic-inorganic hybrid UV-APDs array

Quantum confined Stark effect of polar and non-polar ZnO/ZnMgO quantum wells grown by MBE

Low dark current and stable ultraviolet avalanche photodiode of organic (PEDOT:PSS)-inorganic (ZnSSe) hybrid junction structure

New ultraviolet avalanche photodiodes (APDs) of organic (PEDOT: PSS)-inorganic (ZnSSe) hybrid structure

Influence of residual oxygen impurity in quaternary InAlGaN multiple-quantum-well active layers on emission efficiency of ultraviolet light-emitting diodes on GaN substrates

Recombination enhanced defect reactions in 1 MeV electron irradiated p InGaP

High Gain and High Sensitive Blue-Ultraviolet Avalanche Photodiodes (APDs) of ZnSSe n + -i-p Structure Molecular Beam Epitaxy (MBE) Grown on p-type GaAs Substrates

Plant Growth under High Power Operation of White-Light-Emitting-Diodes by Operating-Current-Pulse-Width Control

Growth mechanisms of ZnO(0001) investigated using the first-principles calculation

Deep level analysis of radiation-induced defects in Si crystals and solar cells

Stable avalanche-photodiode operation of ZnSe-based p+–n structure blue-ultraviolet photodetectors

Epitaxial growth of ZnO crystal on the Si-terminated 6H-SiC(0001) surface using the first-principles calculation

Theoretical investigation on the structural properties of ZnO grown on sapphire

Slow mode degradation mechanism of ZnSe based white LEDs

Persistent Photoconductivity (PPC) and Related Deep Metastable Center in MBE Grown p-Type ZnMgSSe

Deep Level Transient Spectroscopy Analysis of 10 MeV Proton and 1 MeV Electron Irradiation-Induced Defects in p-InGaP and InGaP-based Solar Cells

Optimization of ZnSe/ZnTe superlattice structured p-contact for ZnSe-based optical devices

Image Instrumentation: LIghts, Cameras, and Leses

Demonstration of blue-ultraviolet avalanche photo-diodes of II–VI wide bandgap compounds grown by MBE

白色発光ダイオードの駆動電流パルス幅制御による高出力動作を用いた植物栽培

Efficient and Long-Lived Green Light-Emitting Diodes Based on ZnSSe:Te Active Layer

High sensitive ultraviolet organic-inorganic hybrid photodetectors on ZnSSe grown on p-GaAs with transparent conducting polymer window-layer

Analysis of GaAs/SiN interface states and hot carrier annealing effects in GaAs MESFET

Light Sources on Flow Visualization Photography and Videography(2)

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