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Vectorized magnetometer for space applications using electrical readout of atomic scale defects in silicon carbide

Scientific reports, 2016-11, Vol.6 (1), p.37077-37077, Article 37077

2016

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Data-driven RRAM device models using Kriging interpolation

Scientific reports, 2022-04, Vol.12 (1), p.5963-5963, Article 5963

2022

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An All-Digital Unified Physically Unclonable Function and True Random Number Generator Featuring Self-Calibrating Hierarchical Von Neumann Extraction in 14-nm Tri-gate CMOS

IEEE journal of solid-state circuits, 2019-04, Vol.54 (4), p.1074-1085

2019

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2.4 Gbps, 7 mW All-Digital PVT-Variation Tolerant True Random Number Generator for 45 nm CMOS High-Performance Microprocessors

IEEE journal of solid-state circuits, 2012-11, Vol.47 (11), p.2807-2821

2012

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A 4-fJ/b Delay-Hardened Physically Unclonable Function Circuit With Selective Bit Destabilization in 14-nm Trigate CMOS

IEEE journal of solid-state circuits, 2017-04, Vol.52 (4), p.940-949

2017

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mu RNG: A 300-950 mV, 323 Gbps/W All-Digital Full-Entropy True Random Number Generator in 14 nm FinFET CMOS

IEEE journal of solid-state circuits, 2016-07, Vol.51 (7), p.1695-1704

2016

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A 7-Gbps SCA-Resistant Multiplicative-Masked AES Engine in Intel 4 CMOS

IEEE journal of solid-state circuits, 2023-04, Vol.58 (4), p.1106-1116

2023

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A Time-/Frequency-Domain Side-Channel Attack Resistant AES-128 and RSA-4K Crypto-Processor in 14-nm CMOS

IEEE journal of solid-state circuits, 2021-04, Vol.56 (4), p.1141-1151

2021

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A 617-TOPS/W All-Digital Binary Neural Network Accelerator in 10-nm FinFET CMOS

IEEE journal of solid-state circuits, 2021-04, Vol.56 (4), p.1082-1092

2021

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Nonresonant Transmission Line Probe for Sensitive Interferometric Electron Spin Resonance Detection

Analytical chemistry (Washington), 2019-09, Vol.91 (17), p.11108-11115

2019

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Effects of nitrogen on the interface density of states distribution in 4H-SiC metal oxide semiconductor field effect transistors: Super-hyperfine interactions and near interface silicon vacancy energy levels

Journal of applied physics, 2018-11, Vol.124 (18)

2018

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Relationship Between the 4H-SiC/SiO2 Interface Structure and Electronic Properties Explored by Electrically Detected Magnetic Resonance

IEEE transactions on electron devices, 2015-02, Vol.62 (2), p.301-308

2015

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53 Gbps Native (2 ^) ^ Composite-Field AES-Encrypt/Decrypt Accelerator for Content-Protection in 45 nm High-Performance Microprocessors

IEEE journal of solid-state circuits, 2011-04, Vol.46 (4), p.767-776

2011

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Wafer-Level near Zero Field Spin Dependent Charge Pumping: Effects of Nitrogen on 4H-SiC MOSFETs

Materials science forum, 2020-07, Vol.1004, p.573-580

2020

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The Effect of Nitrogen on the 4H-SiC/SiO2 Interface Studied with Variable Resonance Frequency Spin Dependent Charge Pumping

Materials science forum, 2018-06, Vol.924, p.469-472

2018

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Ionizing Radiation Effects in 4H-SiC nMOSFETs Studied With Electrically Detected Magnetic Resonance

IEEE transactions on nuclear science, 2017-01, Vol.64 (1), p.197-203

2017

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Erratum: Vectorized magnetometer for space applications using electrical readout of atomic scale defects in silicon carbide

Scientific reports, 2017-01, Vol.7 (1), p.40834-40834, Article 40834

2017

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Slow- and rapid-scan frequency-swept electrically detected magnetic resonance of MOSFETs with a non-resonant microwave probe within a semiconductor wafer-probing station

Review of scientific instruments, 2019-01, Vol.90 (1)

2019

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An 8.3-to-18Gbps Reconfigurable SCA-Resistant/Dual-Core/Blind-Bulk AES Engine in Intel 4 CMOS

2022 IEEE International Solid- State Circuits Conference (ISSCC), 2022, Vol.65, p.1-3

2022

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Magnetic Field Sensing with Atomic Scale Defects in SiC Devices

Materials Science Forum, 2016-05, Vol.858, p.265-268

2016

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A Surprising Result: “Bulk” SiC Defects in the Negative Bias Instability in 4H-SiC MOSFETs

Materials Science Forum, 2016-05, Vol.858, p.513-517

2016

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A 280 mV-to-1.1 V 256b Reconfigurable SIMD Vector Permutation Engine With 2-Dimensional Shuffle in 22 nm Tri-Gate CMOS

IEEE journal of solid-state circuits, 2013-01, Vol.48 (1), p.118-127

2013

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Reliability and Performance Issues in SiC MOSFETs: Insight Provided by Spin Dependent Recombination

2019 IEEE International Reliability Physics Symposium (IRPS), 2019, p.1-5

2019

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A 2.05 GVertices/s 151 mW Lighting Accelerator for 3D Graphics Vertex and Pixel Shading in 32 nm CMOS

IEEE journal of solid-state circuits, 2013-01, Vol.48 (1), p.128-139

2013

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A 320 mV 56 μW 411 GOPS/Watt Ultra-Low Voltage Motion Estimation Accelerator in 65 nm CMOS

IEEE journal of solid-state circuits, 2009-01, Vol.44 (1), p.107-114

2009

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Vectorized magnetometer for space applications using electrical readout of atomic scale defects in silicon carbide

Data-driven RRAM device models using Kriging interpolation

An All-Digital Unified Physically Unclonable Function and True Random Number Generator Featuring Self-Calibrating Hierarchical Von Neumann Extraction in 14-nm Tri-gate CMOS

2.4 Gbps, 7 mW All-Digital PVT-Variation Tolerant True Random Number Generator for 45 nm CMOS High-Performance Microprocessors

A 4-fJ/b Delay-Hardened Physically Unclonable Function Circuit With Selective Bit Destabilization in 14-nm Trigate CMOS

mu RNG: A 300-950 mV, 323 Gbps/W All-Digital Full-Entropy True Random Number Generator in 14 nm FinFET CMOS

A 7-Gbps SCA-Resistant Multiplicative-Masked AES Engine in Intel 4 CMOS

A Time-/Frequency-Domain Side-Channel Attack Resistant AES-128 and RSA-4K Crypto-Processor in 14-nm CMOS

A 617-TOPS/W All-Digital Binary Neural Network Accelerator in 10-nm FinFET CMOS

Nonresonant Transmission Line Probe for Sensitive Interferometric Electron Spin Resonance Detection

Effects of nitrogen on the interface density of states distribution in 4H-SiC metal oxide semiconductor field effect transistors: Super-hyperfine interactions and near interface silicon vacancy energy levels

Relationship Between the 4H-SiC/SiO2 Interface Structure and Electronic Properties Explored by Electrically Detected Magnetic Resonance

53 Gbps Native (2 ^) ^ Composite-Field AES-Encrypt/Decrypt Accelerator for Content-Protection in 45 nm High-Performance Microprocessors

Wafer-Level near Zero Field Spin Dependent Charge Pumping: Effects of Nitrogen on 4H-SiC MOSFETs

The Effect of Nitrogen on the 4H-SiC/SiO2 Interface Studied with Variable Resonance Frequency Spin Dependent Charge Pumping

Ionizing Radiation Effects in 4H-SiC nMOSFETs Studied With Electrically Detected Magnetic Resonance

Erratum: Vectorized magnetometer for space applications using electrical readout of atomic scale defects in silicon carbide

Slow- and rapid-scan frequency-swept electrically detected magnetic resonance of MOSFETs with a non-resonant microwave probe within a semiconductor wafer-probing station

An 8.3-to-18Gbps Reconfigurable SCA-Resistant/Dual-Core/Blind-Bulk AES Engine in Intel 4 CMOS

Magnetic Field Sensing with Atomic Scale Defects in SiC Devices

A Surprising Result: “Bulk” SiC Defects in the Negative Bias Instability in 4H-SiC MOSFETs

A 280 mV-to-1.1 V 256b Reconfigurable SIMD Vector Permutation Engine With 2-Dimensional Shuffle in 22 nm Tri-Gate CMOS

Reliability and Performance Issues in SiC MOSFETs: Insight Provided by Spin Dependent Recombination

A 2.05 GVertices/s 151 mW Lighting Accelerator for 3D Graphics Vertex and Pixel Shading in 32 nm CMOS

A 320 mV 56 μW 411 GOPS/Watt Ultra-Low Voltage Motion Estimation Accelerator in 65 nm CMOS

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