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Stress relaxation at forming GaSe–Si(1 1 1) interfaces

Journal of crystal growth, 2000-08, Vol.217 (4), p.371-377

2000

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Single-crystal hexagonal and cubic GaN growth directly on vicinal (001) GaAs substrates by molecular-beam epitaxy

Applied physics letters, 2000-05, Vol.76 (18), p.2580-2582

2000

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Microstructure of GaN Layers Grown onto (001) and (111) GaAs Substrates by Molecular Beam Epitaxy

Materials science forum, 2003-09, Vol.433-436, p.999-1002

2003

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Correlation of the structural and optical properties of GaN grown on vicinal (0 0 1) GaAs substrates with the plasma-assisted MBE growth conditions

Journal of crystal growth, 2001-07, Vol.227, p.410-414

2001

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Band structure of an epitaxial thin film of InSe determined by angle-resolved ultraviolet photoelectron spectroscopy

Journal of physics. Condensed matter, 1999-06, Vol.11 (22), p.4303-4315

1999

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MBE growth of different hexagonal GaN crystal structures on vicinal (100) GaAs substrates

Materials science & engineering. B, Solid-state materials for advanced technology, 2001-05, Vol.82 (1), p.16-18

2001

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Study of the correlation between GaN material properties and the growth conditions of radio frequency plasma-assisted molecular beam epitaxy

Materials science & engineering. B, Solid-state materials for advanced technology, 2001-03, Vol.80 (1), p.304-308

2001

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Reconstructions upon thermal desorption in ultra high vacuum of InSe covered Si(111) surfaces

The European physical journal. B, Condensed matter physics, 1998-11, Vol.5 (4), p.919-926

1998

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Investigation of Different Si(111) Surface Preparation Methods for the Heteroepitaxy of GaN by Plasma-Assisted MBE

Physica status solidi. A, Applied research, 2001-12, Vol.188 (2), p.515-518

2001

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Influence of MBE Growth Temperature on the Properties of Cubic GaN Grown Directly on GaAs Substrates

Physica status solidi. A, Applied research, 1999-11, Vol.176 (1), p.525-528

1999

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MBE growth of different hexagonal GaN crystal structures or vicinal (100) GaAs substrates

Materials science & engineering. B, Solid-state materials for advanced technology, 2001, Vol.82 (1-3), p.16-18

2001

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Brillouin scattering study of epitaxial InSe films grown on the surface

Journal of physics. Condensed matter, 1997-06, Vol.9 (26), p.5575-5580

1997

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Brillouin scattering study of epitaxial InSe films grown on the Si(111)1 x 1-H surface

Journal of physics. Condensed matter, 1997, Vol.9 (26), p.5575-5580

1997

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A technology for GaAs-based optoelectronic integrated circuits

2000 International Semiconductor Conference. 23rd Edition. CAS 2000 Proceedings (Cat. No.00TH8486), 2000, Vol.1, p.155-158 vol.1

2000

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Interface properties of MBE grown [formula omitted] heterojunctions

Surface science, 1996-05, Vol.352, p.833-838

1996

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Correlation of the structural and optical properties of GaN grown on vicinal (001) GaAs substrates with the plasma-assisted MBE growth conditions

Journal of crystal growth, 2001, Vol.227-28, p.410-414

2001

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Interface properties of MBE grown InSe/Si(111) heterojunctions

Surface science, 1996, Vol.352-54, p.833-838

1996

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Material properties of gan grown by radio frequency plasma-assisted molecular beam epitaxy on si

ASDAM 2000. Conference Proceedings. Third International EuroConference on Advanced Semiconductor Devices and Microsystems (Cat. No.00EX386), 2000, p.9-12

2000

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Stress relaxation at forming GaSe–Si(1 1 1) interfaces

Single-crystal hexagonal and cubic GaN growth directly on vicinal (001) GaAs substrates by molecular-beam epitaxy

Microstructure of GaN Layers Grown onto (001) and (111) GaAs Substrates by Molecular Beam Epitaxy

Correlation of the structural and optical properties of GaN grown on vicinal (0 0 1) GaAs substrates with the plasma-assisted MBE growth conditions

Band structure of an epitaxial thin film of InSe determined by angle-resolved ultraviolet photoelectron spectroscopy

MBE growth of different hexagonal GaN crystal structures on vicinal (100) GaAs substrates

Study of the correlation between GaN material properties and the growth conditions of radio frequency plasma-assisted molecular beam epitaxy

Reconstructions upon thermal desorption in ultra high vacuum of InSe covered Si(111) surfaces

Investigation of Different Si(111) Surface Preparation Methods for the Heteroepitaxy of GaN by Plasma-Assisted MBE

Influence of MBE Growth Temperature on the Properties of Cubic GaN Grown Directly on GaAs Substrates

MBE growth of different hexagonal GaN crystal structures or vicinal (100) GaAs substrates

Brillouin scattering study of epitaxial InSe films grown on the surface

Brillouin scattering study of epitaxial InSe films grown on the Si(111)1 x 1-H surface

A technology for GaAs-based optoelectronic integrated circuits

Interface properties of MBE grown [formula omitted] heterojunctions

Correlation of the structural and optical properties of GaN grown on vicinal (001) GaAs substrates with the plasma-assisted MBE growth conditions

Interface properties of MBE grown InSe/Si(111) heterojunctions

Material properties of gan grown by radio frequency plasma-assisted molecular beam epitaxy on si

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